1775470 C OD I SEMICONDUCTOR INC 90D 00579 D T- o3// 90 DE Bfa77s47o oooosea s CODI Semiconductor, Inc. 1N4151 1N4152- 1N4153- 1N4154 HIGH SPEED DIODES * SILICON PLANAR EPITAXIAL DO-35 OUTLINE C...4 pF (MAX) . l {25 40)" trp...2 nS (MAX) @ 10 mA, 6 V, 100.0. | ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures 0180457) Storage Temperature Range 65C to +200C 0.440 (358) Maximum Junction Operating Temperature +175C Lead Temperature +260C Power Dissipation (Note 2) l Maximum Total Power Dissipation at 25C Ambient 500 mw Linear Power Derating Factor 3.33 mW/C 00 ) Maximum Voltage and Currents powtoaye TP 7 L corsien wiv Working Inverse Voltage IN415150V = 1N4153 50 V oto 1 sa)" . 1N4 152 30 V 1N4154 25 V lo Average Rectified Current 100 mA NOTES: Ig Continuous Forward Current 300 mA : i tae c lad steel teads, tin plated ig Peak Repetitive Forward Current 400 mA Gold pleted leads available _ if (surge) Peak Forward Surge Current Hermetically sealed glass package Pulse Width = 18 1O0A Package weight is 0.14 gram Pulse Width = 1 us 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS Ve Forward Voltage 1N4 154 1.0 v le = 30 mA 1IN4151 1.0 Vv lp = 50 mA 1N4 #52 &1N4153 0.49 0.55 Vv ip = 0.1 mA 0.63 0.69 v Ip = 0.25 mA 0.59 0.67 v ip = 1.0mA 0.62 | 0.70 v Ip = 2.0 mA 0.70 | 0.81 Vv if = 10 mA 0.74 0.88 Vv Ip = 20mA IR Reverse Current 1N4 154 O14 uA VA = 26V 100 BA VR = 25V, Ta = 160C 1N4153 _ IN415t 0.05 BA VR = 60V 60 BA Vp = 50 V, Ta = 150C 1N4 152 0.05 HA | VR = 30V 50 pA | VR = 30V,T, = 160C BY Breakdown Voltage 1N4 154 35 Vv In = 5.0 pA 1N4163 1N4151 75 Vv in = 6.0 pA 1N4162 40 Vf ip = 5.0nA ter Reverse Recovery Time . 4.0 ns iy = 10 mA, fy = 10 mA (Note 3) 2.0 ns y= 10 mA ; V; = -6.0V, AL = 1000 Cc Capacitance 4.0 pF Vp = 0,1 = 1.0 MHz NOTES: 1 The maximum ratings are timiling values above which satisfactory performance may be impaled. 2 These are steady state iimite. The factory ahoutd be conzulled in applications involving pulsed or fow duty cycte operalion 3. Recovery to 10 mA 4144 Market St., Kenilworth;NJ,USA 07033 #3(201)'298-0400 | TOLL-FREE: 1-800-232-COD! TELEX: 844-796 FAX NUMBER: 201-298-04771775470 C O D I SEMICONDUCTOR INC 90D 00580 D 7-03 -ll Hit] CODI Semiconductor, Inc. | 40 DE ar7suro 0000580 i i | HIGH SPEED GENERAL PURPOSE SMALL SIGNAL DIODE TYPICAL ELECTRICAL CHARACTERISTIC CURVES AT 25C AMBIENT TEMPERATURE UNLESS OTHERWISE NOTED FORWARD VOLTAGE VERSUS FORWARD CURRENT VERSUS CAPACITANCE VERSUS FORWARD CURRENT . _ TEMPERATURE COEFFICIENT REVERSE VOLTAGE + FORWARD CURRENT - mA " 0.2 o4 Oe oa 1.0 12 a is 7G 2 30 $ 0 ao ao wa 6 Ve - FORWARO VOLTAGE - VOLTS 1 TEMPERATURE COLEFICIERT - mvite Vp - PEVERSE VOLTAGE - VOLTS REVERSE CURRENT VERSUS REVERSE CURRENT VERSUS DYNAMIC IMPEDANCE VERSUS REVERSE TAGE AMBIENT TEMPERATURE FORWARD CURRENT xO 228 ort + FORWARD CURRENT - ma ' 25 50 76 100 i dk wa s 10 15 20 25 Ta ~ AMRHENT TEMPERATURE - C fy + DYMAMIC EMPLDANCE = OHIS Vp ~ REVERSE VOLTAGE - VOLTS: REVERSE RECOVERY TIME VERSUS AAD EuINVARS CURRENT VERSUS AMBIENT TEMPERATURE FORWARD CURRENT (lr = Ip) ae By F we te v0 E t g a) z = # 20 z E o. Sm & - fn, . I Cag | \% 3 ito Hr 4 8 e we 7m m 8 WH KH tO Mm WH 1S ww FORWARD CUMRINT + RIVIESE CURRIAT - mA Tg > AAMBILHT TEMPERATURE ~ POWER DERATING CURVE 500 a 8 Pp ~ POWER DISSIPATION - mw 3 Oo 25 50 75 100 128 180 175 200 tg - AVERAGE TEMPERATURE - C eater tt 144 Market St.#Kenilworth*NJ3USA 07033 $%(201)'298-0400 TOLL-FREE: 1-800-232-CODI TELEX: 844-796 FAX NUMBER: 201-298-0477