TM FQB12N60C / FQI12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * * * * * * 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! D G S FQB Series G! I2-PAK D2-PAK G D S FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB12N60C / FQI12N60C 600 Units V 12 A - Continuous (TC = 100C) 7.4 A 48 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 12 A EAR (Note 1) dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) 22.5 4.5 3.13 mJ V/ns W PD Power Dissipation (TC = 25C) 225 1.78 -55 to +150 W W/C C 300 C TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 870 mJ Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.56 Units C/W RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB12N60C / FQI12N60C QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- 0.5 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.53 0.65 -- 13 -- S -- 1760 2290 pF -- 182 235 pF -- 21 28 pF -- 30 70 ns -- 85 180 ns -- 155 120 ns -- 90 190 ns -- 48 63 nC -- 8.5 -- nC -- 21 -- nC Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A gFS Forward Transconductance VDS = 40 V, ID = 6 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 12 A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 12 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A ISM -- -- 48 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ns Qrr Reverse Recovery Charge -- 4.9 -- C VGS = 0 V, IS = 12 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB12N60C / FQI12N60C Electrical Characteristics FQB12N60C / FQI12N60C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 10 0 2 1 10 10 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 VGS = 10V 1.0 VGS = 20V 0.5 10 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Note : TJ = 25 -1 0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 12 VDS = 120V Ciss 2000 Coss 1500 Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VGS, Gate-Source Voltage [V] 10 2500 Capacitance [pF] 10 ID, Drain Current [A] VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 12A 0 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, October 2003 FQB12N60C / FQI12N60C Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 6.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 14 Operation in This Area is Limited by R DS(on) 2 10 12 10 s 10 1 ms 10 ms 1 10 ID, Drain Current [A] ID, Drain Current [A] 100 s 100 ms DC 0 10 6 4 Notes : -1 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 2 -2 10 8 0 1 10 2 10 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area (t), T h e r m a l R e s p o n s e 10 JC 10 Z 10 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature 0 D = 0 .5 0 .2 -1 N o te s : 1 . Z J C ( t) = 0 . 5 6 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM -2 t1 s in g le p u ls e t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB12N60C / FQI12N60C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2003 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, October 2003 FQB12N60C / FQI12N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB12N60C / FQI12N60C Package Dimensions 4.50 0.20 9.90 0.20 +0.10 2.00 0.10 2.54 TYP (0.75) ~3 0 0.80 0.10 1.27 0.10 2.54 0.30 15.30 0.30 0.10 0.15 2.40 0.20 4.90 0.20 1.40 0.20 9.20 0.20 1.30 -0.05 1.20 0.20 (0.40) D2-PAK +0.10 0.50 -0.05 2.54 TYP 9.20 0.20 (2XR0.45) 4.90 0.20 15.30 0.30 10.00 0.20 (7.20) (1.75) 10.00 0.20 (8.00) (4.40) 0.80 0.10 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 (Continued) I2-PAK 4.50 0.20 (0.40) 9.90 0.20 +0.10 MAX13.40 9.20 0.20 (1.46) 1.20 0.20 1.30 -0.05 0.80 0.10 2.54 TYP 2.54 TYP 10.08 0.20 1.47 0.10 MAX 3.00 (0.94) 13.08 0.20 ) 5 (4 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB12N60C / FQI12N60C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2003 Fairchild Semiconductor Corporation Rev. I5 Product Folder - Fairchild P/N FQI12N60C - 600V N-Channel Advance QFET C-Series Page 1 of 2 Careers | Sitema Go DATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS DESIGN CENTER SUPPORT COMPANY INVESTORS MY FA Home >> Find products >> Related Links FQI12N60C 600V N-Channel Advance QFET C-Series Contents *General description *Features *Product status/pricing/packaging *Order Samples Request samples How to order products *Qualification Support Datasheet Download this datasheet Product Change Notices (PCNs) Support Sales support General description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. Quality and reliability e-mail this datasheet Design center This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high This page energy pulse in the avalanche and commutation mode. These devices are Print version well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. back to top Features z z z z z z 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability back to top Product status/pricing/packaging Product Product status Pb-free Status mhtml:file://C:\TEMP\FQI12N60CTU.mht Pricing* Package type Leads Packing method Package Marking Convention** 17-Aug-2007 Product Folder - Fairchild P/N FQI12N60C - 600V N-Channel Advance QFET C-Series FQI12N60CTU Full Production $1.74 TO-262(I2PAK) 3 Page 2 of 2 RAIL Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &4 (4-Digit Date Code) * Fairchild 1,000 piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples Indicates product with Pb-free second-level interconnect. For more information click here. Package marking information for product FQI12N60C is available. Click here for more information . back to top Qualification Support Click on a product for detailed qualification data Product FQI12N60CTU back to top (c) 2007 Fairchild Semiconductor Products | Design Center | Support | Company News | Investors | My Fairchild | Contact Us | Site Index | Privacy Policy | Site Terms & Conditions | Standard Terms & Conditions o mhtml:file://C:\TEMP\FQI12N60CTU.mht 17-Aug-2007