MOTOROLA SC CXSTRS/R F) BBE D WM 6367254 0098827 TO? MEMOTL MOTOROLA m= SEMICONDUC yyy TECHNICAL DATA MTPSO55EL Motorola Preferred Device Designers Data Sheet TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs LOGIC LEVEL 12 AMPERES RDS(on} = 0.18 OHM 60 VOLTS This advanced E-FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low thresh- old voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain-to-source diode with a fast recovery trme. Designed far low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and com- D mutating safe operating areas are critical and offer additional safety margin against i unexpected voltage transients. @ Low Drive Requirement ta Interface Power Loads to Logic Level ICs or Microprocessors VGsith) = 2 Volts Max i G @ Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode Unclamped $ Inductive Switching (UIS) Energy Capability Specified TMOS at 100C @ Commutating Safe Operating Area {CSOA) Specified for Use in Half and Full Bridge Circuits Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits Ipss, GSith) and Vps(on) Specified at 150C CASE 2214-06 TO-220AB MAXIMUM RATINGS (T) = 25C unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage Vpss 60 Vde Drain-Gate Voltage (Rag = 1 M&) VDGR 60 Vde Gate-Source Voltage Continuous Ves #15 Vde Non-repetitive (ty = 50 us) +20 Vpk Drain Current Continuous Ip 12 Adc Pulsed ipM 26 Total Power Dissipation @ Tc = 25C Pp 40 Watts Derate above 25C 0.32 wrc Operating and Storage Temperature Range Ty. Tstg 65 to 150 C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case RaJc 312 CAN Junction to Ambient Rega 62.5 Maximum Lead Temperature for Soldering TL 260 C Purposes, 1/8 from case for 5 seconds Dasigners Data for Worst Case Conditions The Designer's Data Sheet permits the design of most circul.s entirely from the information presented SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design Preferred device is a Motorola recommended choice for future use and best overail value. ne MOTOROLA TMOS POWER MOSFET DATA 3-433MOTOROLA SC CXSTRS/R F) BAE D MM 6367254 0098825 943 MEMOTL MTP3055EL ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted) [ Characteristic | Symbo!} Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage ViBRIDSS 60 - Vdc {VGg = 0, Ip = 0.25 mA} Zero Gate Voltage Drain Current Ipss pA (Vpg = Rated Vpss. Ves = 0) _ 1 (Vpg = Rated Voss, Veg = 0, Ty = 150C) _ 50 Gate-Body Leakage Current, Forward (Vggr = 15 Vdc, Vos = 0) IGSSF - 100 nAdc Gate-Body Leakage Current, Reverse (Vgsp = 15 Vde, Vas = 0) lesser _ 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage VGSith) Vdc (Vps = Ves. Ip = 1 mA) 1 2 Ty = 150C 0.6 16 Static Drain-Source On-Resistance (Vgg = 5 Vdc, Ip = 6 Adc) RpS(on) _ 0.18 Ohm Drain-Source On-Valtage (Vgg = 5 V) VDS{(on) Vde (Ip = 12 Adc) od 24 (ip = 6 Ade, Ty = 100C) - 1.95 Forward Transconductance (Vos = 16 V, Ip = 6 A) gFS 5 _ mhos DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Unclamped Drain-to-Source Avalanche Energy See Figures 13 and 74 WosrR mJ (Ip = 264, Vpp = 6 V, Te = 25C, Single Pulse, Nan-repetitive) _ 18 (Ip = 124, Vpp = 6 V, Te = 25C, PW. < 100 us, Duty Cycle = 1%) _ 35 (Ip = 4.8A,Vop = 6V, Te = 100C, PW. = 100 ws, Duty Cycle < 1%) _ 16 DYNAMIC CHARACTERISTICS Vos = 25. Veg = 0, f = 1 MHz 400 (Typ) _ Input Capacitance Vgs = 18 V, Vpg = 0, f = 1 MHz Css 1000 (Typ) _ pF See Figure 15 Vos = 25V, Ves = 0. f = 1 MHz 30 (Typ) Reverse Transfer Capacitance Ves = 15 V, Vps = 0, f = 1 MHz Crss 660 (Typ) _ pF See Figure 15 Vos = 25. Vgg = 0. f = 1 MHz Output Capacitance See Figure 15 Coss 175 (Typ) _ pF SWITCHING CHARACTERISTICS (Ty = 100C) Turn-On Delay Time tdion) 20 (Typ) _ ns Rise Time (VoD = 25, Ip = 6A, tr 95 (Typ) _ Ves = 5. Rgen = 50 ohms, Turn-Off Delay Time Rgg = 50 ohms) td(off) 38 (Typ) Fall Time t 50 (Typ) _ Total Gate Charge (Vps = 48V, Ip = 12A, Qg 7.2 (Typ) 7 nc Gate-Source Charge Vos = 5 Vde) Ogs 2 (Typ) _ See Figures 16 and 17 Gate-Drain Charge OQgq 8 (Typ) SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage (lg = 12 A, Vgg = 8) Vsp 1.04 (Typ) | 1.18 | Vdc Forward Turn-On Time ilg = 264, Veg = 0, ton Limited by stray inductance Reverse Recovery Time digfdt = 400 A/us, VR = 30 V) ter 55 (Typ) | - | ns INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance Lg nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) {Measured from the drain lead 0 25 from package to center of die) 45 (Typ) ~ internal Source Inductance Ls 7.5 (Typ) - (Measured from the source lead 0.25 from package to source bond pad.} ee MOTOROLA TMOS POWER MOSFET DATA 3-434MTP3055EL MOTOROLA SC (XSTRS/R F) LOE D MM 6367254 0098829 6aT MEMOTE TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. On-Region Characteristics Ty = 25C 75 6 10 Ip. DRAIN CURRENT (AMPS} 0 1 2 3 4 5 Vos, DRAIN-TO SOURCE VOLTAGE (VOLTS} Figure 3. Transfer Characteristics Tj = 55C Ip. DRAIN CURRENT (AMPS) a 2 3 4 5 6 Vigs. GATE TO-SQURCE VOLTAGE (VOLTS) Figure 5. On-Resistance versus Gate-to-Source Voltage 025 Ty = 25C Ip = 6A 2 o = Q = a nN RDS{on): DRAIN-TO-SOURCE RESISTANCE (OHMS) z a o 3 6 9 Vs. GATE TO SOURCE VOLTAGE (VOLTS) 12 "DSton}- ON RESISTANCE (OHMS) RpSion} DRAIN-TO SOURCE RESISTANCE (OHMS) Vgsith}, GATE THRESHOLD VOLTAGE (NORMALIZED) Figure 2. Gate-Threshold Voltage Variation With Temperature Vos = Ves Ip = imA -2 0 25 50 rh) 125 Ty, JUNCTION TEMPERATURE (C) {00 150 Figure 4. On-Resistance versus Drain Current > a on Ty = 100C 2 mm o wm o o a on 0 3 6 9 Ip, DRAIN CURRENT (AMPS) 12 Figure 6. On-Resistance Variation With Temperature 04 032 024 016 008 -3 3-38 0 rac) 50 76 Ty, JUNCTION TEMPERATURE (C) 100 125 150 a MOTOROLA TMOS POWER MOSFET DATA 3-435MOTOROLA SC CXSTRS/R F) MTP3055EL Figure 7. Breakdown Voltage Variation With Temperature a Re Ip = 250 nA o 2 o oo VBRIOSS). DRAIN-TO-SOURCE VOLTAGE (NORMALIZED) 0 25 50 15 100 125 150 Ty, JUNCTION TEMPERATURE (C} | wo o I mo wm FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain-to- source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limi- tations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction tem- perature of 150C. Limitations for repetitive pulses at var- ious case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, "Transient Thermal Resistance-General Data and Its Use provides detailed instructions. b6E D MM 6367254 00984630 STL MEMOTE Figure 8. Maximum Rated Forward Biased Safe Operating Area So 10 ms Veg = 15V SINGLE PULSE Tc = 25C Ip, DRAIN CURRENT (AMPS) Roston) LIMIT PACKAGE LIMIT THERMAL LIMIT so 01 | Vps, DRAIN TO SOURCE VOLTAGE (VOLTS) The switching safe operating area fundamental limits are the peak current, ippy and the breakdown voltage, ViBR)DSS- This is applicable for both turn-on and turn- off of the devices for switching times less than one microsecond. The power averaged over a complete switching cycle must be less than: TJtmax) - Tec Resc Figure 9. Thermal Response 10 0? Fp = 95 05 G3 02 0.2 01 Ot 0 00? 0 005 003 001 002 r{t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE 001 001 002 003 005 01 02 03 905 10 20 30 50 10 2 30 (50 100 t, TIME {ms} Ragcit) = rit) Raic Rajclt) = 3 12C/W Max D Curves Apply for Power Pulse Train Shown Read Time at ty Tytpk) Te = Pipk) Reuctt) Piok) t tg DUTY CYCLE, D = 200 300 6800 = 1000 MOTOROLA TMOS POWER MOSFET DATA 3-436MTP3055EL MOTOROLA SC bSE D MM 6367254 0098831 438 BRMOTL CXSTRS/R F) COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 11 defines the limits of safe operation for com- mutated source-drain current versus re-applied drain voltage when the source-drain diode has undergone for- ward bias. The curve shows the limitations of IF and peak Vps for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 10 are present. Full or half-bridge PWM DC motor con- trailers are common applications requiring CSOA data. Device stresses increase with increasing rate of change of source current so di,/dt is specified with a maximum value. Higher values of dl,/dt require an appropriate der- ating of len. peak Vps or both. Ultimately dl,/dt is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. VpSipk) is the peak drain-to-source voltage that the device must sustain during commutation; Fry is the max- imum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of Viprypss to ensure that the CSOA stress is maximized as Ig decays from Ipy to zero. Rgs should be minimized during commutation. Ty has only a second order effect on CSOA. Stray inductances in Motorola's test circuit are assumed to be practical minimums. dVps/dt in excess of 10 Vins was attained with dl,/dt of 400 A/ys. Figure 11. Commutating Safe Operating Area (CSOA) 30 dig/dt =< 400 Ays 24 18 12 Ig, DRAIN CURRENT (AMPS} 0 10 20 50 60 70 80 Vps. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 13. Unclamped Inductive Switching Test Circuit Figure 10. Commutating Waveforms 15 ney Ves 0 lem dig/dt 30. e I 8 attr 10% >| Le-ton IRM VDSIpk) dVpgydt Vv wh ge os vi Vast 2 f b> MAX CSOA STRESS AREA Figure 12. Commutating Safe Operating Area Test Circuit = Va = 80% OF RATED Vpg Vag = Ve + Uj dlg/dt Figure 14. Unclamped Inductive Switching Waveforms VIBRIDS t- ~- - Cone ee tee Yop. \ L (TIME), Jef | 1 V, Wose = (1 Lh 2) (uns. DSR (; O} \Werioss - Yoo MOTOROLA TMOS POWER MOSFET DATA 3-437MTP3055EL MOTOROLA SC (CXSTRS/R F) bAE D MM 6367254 0098832 374 MNOTL Figure 15. Capacitance Variation Figure 16. Gate Charge versus Gate-to-Source Voltage Vgs 0 V0 1200 8 24 Css 960 Vos = 9 720 Crss 480 C, CAPACITANCE (pF) Ys, GATE-TO SOURCE VOLTAGE 240 5 8 =610 5 0 5 10 6 0 26 3% 3 0 2 4 6 8 10 Vgs ~+ Vos Qg, TOTAL GATE CHARGE {nC} GATE TO-SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 17. Gate Charge Test Circuit +18V Voo J SAME | DEVICE TYPE AS DUT rO1 uF FERRITE 100 BEAD _ Vin = 15 Vpk, PULSE WIDTH < 100 yus, DUTY CYCLE < 10% MOTOROLA TMOS POWER MOSFET DATA 3-438