VDRM =4.5kV
VRRM =18V
IPULSE = 150 kA
VDcmax =2.8kV
Features
•
Asymmetric Design
•
For Single or Repetitive Pulse Applications
•
Very High di/dt Capability
•
Free Floating Silicon Technology
•
Glazed Ceramic Presspack Housing
•
High Interdigitated Gate Structure
•
Optimized as Discharge Switch
•
Driver Unit Integrated
•
Optical Triggering
Electrical Data
VDRM Repetitive peak of-state voltage 4.5 kV Tj = 125°C
VRRM Repetitive reverse blocking voltage 18 V Tj = 125°C
VDC Permanent DC voltage for 100
FIT failure rate 2.8 kV At T j ≤ 120 °C. Ambient cosmic
radiation at sea level in open air.
IPULSE Max. Pulse Current 150 kA Half sine wave, Tj ≤ 50°C, tp ≤ 100 µs
di/dt Max. curr ent rate of r ise 20 kA/µs1 Hz
f Pulse repetition frequency ≤ 400 Hz tp = 10 µs, 28 kA, Tc = 60°C
I2t Limiting load integral 1.13 x106A2stp = 100 µs, Tj = 50 °C
VT0 Threshold voltag e 1.18 V Tj = 50°C
1.05 V Tj = 125°C
rTSlope resistance 0.18 mΩTj = 50°C
0.20 mΩTj =125°C
VTForward voltage drop 1.72 V IT = 3000A , T j = 50°C
1.65 V IT = 3000A, T j = 125°C
Tdon Turn- on delay time 0.9 µsLight on 90%, VD 10%
Remark:
- The trigger pulse length must be at least 50 µs longer than the total main pulse. The device is not able to switch off
current.
- Also available as Reverse Blocking (Symmetric) Version (5SPB 36L4506), and as Reverse Conducting Version
(5SPR 26L4506)
ABB Switzerland Ltd reserves the right to change specificati ons without notice
High Current High di/dt Switch
for Pulsed Power Applications
5SPY 36L4506
Cover from Driver Uni t removed