2N3251 Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (oC)175o I(CBO) Max. (A)220nO/ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq300M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(fe) Min. SS Current gain.30oY @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)1.0