© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C10A
IDM TC= 25°C, pulse width limited by TJM 35 A
IAR TC= 25°C10A
EAR TC= 25°C25mJ
EAS TC= 25°C 750 mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 125 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
VISOL 50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
FCMounting Force 11..65/2.5..15 N/lb
Weight 2g
DS99411E(03/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 125°C50µA
RDS(on) VGS = 10 V, ID = IT, (Note 1) 450 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFC 16N50P VDSS = 500 V
ID25 = 10 A
RDS(on) ≤≤
≤≤
≤ 450 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤
200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220TM
(Electrically Isolated Back Surface)
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<35pF)
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lUnclamped Inductive Switching (UIS)
rated
lFast intrinsic Rectifier
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly: no screws, or isolation
foils required
lSpace savings
lHigh power density
lLow collector capacitance to ground
(low EMI)
Isolated back surface
G = Gate D = Drain
S = Source
ISOPLUS220TM (IXFC)
E153432
G
DS
IXFC 16N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = IT, pulse test 9 16 S
Ciss 2250 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 240 pF
Crss 12 pF
td(on) 23 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = IT25 ns
td(off) RG = 10 Ω (External) 70 ns
tf22 ns
Qg(on) 43 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT15 nC
Qgd 12 nC
RthJC 1.0 °C/W
RthCS 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 16 A
ISM Repetitive 40 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 16 A, -di/dt = 100 A/µs 200 ns
IRM VR = 100 V, VGS = 0 V 6 A
QRM 0.6 µC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS220TM (IXFC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Note 1: Test Current IT = 8 A
© 2006 IXYS All rights reserved
IXFC 16N50P
Fig. 1. Output Characteristics
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 2. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 8A vs.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 16A
I
D
= 8A
Fig. 4. R
DS(on)
Normalized to I
D
= 8A vs. Drain
Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
02468101214161820
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
16
18
20
44.555.566.57
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 5. Maximum Drain Current vs.
Case Temperature
0
1
2
3
4
5
6
7
8
9
10
11
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
ID - Amperes
IXFC 16N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_16N50P (57-745) 11-30-05-A.XLS
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0 2 4 6 8 101214161820
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 8A
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11. Forward-Bias Safe Operating Area
0
1
10
100
10 100 1000
VDS - Volts
ID - Amperes
TJ = 150ºC
TC = 25ºC
25µs
1ms
100µs
RDS(on) Limit
10m
DC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
10.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R(th)JC - ºC / W
