3875081 GE SOLID STATE gy pe WM aa7soa1 oo1a41a 1 | ee Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors o ( 6.0A, 100V fos(on) = 0.30: Features: a SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance Majority carrier device 9208-29741 TERMINAL DIAGRAM The 2N6788 is an n-channel enhancement-mode silicon- gate power field-effect transistors designed for applications TERMINAL DESIGNATION such as switching regulators, switching converters, motor drivers, retay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from integrated circuits. The 2N6788 is supplied in the JEDEC TO-205AF (LOW PROFILE TO-39) metal package. GATE ORAIN (CASE) 9208-37555 JEDEC TQ-20SAF Absolute Maximum Ratings 2 ~ GE" to 150" 3563875081 GE SOLID STATE gy DE aa7508l OOLa4L4 3 L T-39-09 Standard Power MOSFETs toe 2N6788 Electrical Characteristics @ Tc = 25C (Unless Otherwise Thermal Resistance Sea Rg 10 Sea Fig. 15 IMOSFET switching times are essentially independent of opersting temperature.) . = [Rise _ Junction to- Case LT - [ee Tew] ] { Risa __Junction-to-Ambient LE -_ [ - [1% [eC W | Free ar Operation } Source-Drain Diode Switching Characteristics (Typical) tt Reverse Recovery Tine 230 [te [Ty = 186C Ic = 6 0A, digit = 100A/ue Qan Reversa Recovered Charge 12 [ C [ Ty = 180C, te = 6 0A, digit ~ 1QAIus ton Forward Fuin-on Fime Inurinsic (un-on time Is negtigible. Tum-on speed Is substentlelly convolled by lg + Up. @ Ty = 25C to 150C. JEOEC registered velus Ip, OAAIN CURRENT (AMPERES) Ig DRAIN CURHENT [AMPEHES} Wy PULSE TEST a 10 10 30 40 Vos GRAIN TO SOUACE VOLTAGE (VOLTS Fig, 1 ~ Typical Output Characteristics + Sbus PULSE TEST a 2? 4 & 4a vos ORAIY 1) SOURCE VOLTAGE VOLTS! Fig. 3 Typical Saturation Characteristics @ Pridse Tost, Pulse wicth < 30ns, Outy Cycle < 2%, Repetitive Rating: Pulse width Emited by m thon tai ature. ax. tamper 5 See Transient Thermat mpadence Curve (Fig, Si. Tye 125C \ t Tyr 250 a 1 ' Tye -$50C fp ORAIN CUARENT (AMPERES) 3 40 a 2 4 6 a 10 n Vag, GATE 10 SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics LIMITED BY Agsten) Ip, ORAIN CURRENT (AMPERES) Ter Ty* 150C MAX Func * 625 *C-W SINGLE 10 192 5 Ww 2 $0 100 2000500 Vog. ORAIN TO SOUACE VOLTAGE IVOLTS) Fig, 4 Maximum Safe Operating Area 3573875081 GE SOLID STATE qy Standard Power MOSFETs 2N6788 358 + BV acs, DRAIN TO SOURCE BREAKDOWN VOLTAGE 6 z g 2 KE to 35 gE a Ba a2 Zz 01 Sz x06 Su 2: eo 2 002 % 2 NY 001 pe W3a7so81 oousuis I 7-39-09 SINGLE PULSE (TRANSIENT THEAMAL IMPEDANCE! ei oUTY FACTOR, 0 # 2 PER UNIT BASE Rinse = 6.25 OEG Cow 3a Te* Pou Zinictd Te ee 5 gt 2 yd 2 5 ye? 5 yet 2 rT a) 5 ty, SQUARE WAVE PULSE DURATION ISECONODS} Fig. 5 Mi Effective Ti Thermal | d ad ion-to-Case Vs. Pulse Duration Fi INDAMALIZED) Test * Rostent iz. TRANSCONDUCTANCE {SIEMENS} be Ig. DRAIN CURRENT (AMPERES) 20 2 ig. 6 Typical Transconductance Vs. Drain Current 13 420 u 2 z 1B 3 2 19 S s 105 BS a8 te $3 Sf O95 82 2 090 z = 5 ou z = a 040 Pa on 0-4-0000 20 kg Ty JUNCTION TEMPERATURE (C) WO 1270 14g Fig. 8 = Breakdown Voltage Vs. Temperature ton. REVERSE DRAIN CUARENT (AMPERES) Ty = 150%, 2 Vso SOURCE TO ORAIN VOLTAGE VOLTS! Fig. 7 Typleal Source-Orain Ciode Forward Voltaga 250 138 700 175 150 125 160 am Vgg* tv Gs oso ig aA 025 t qa +60 ag 2 0 2M 6 60 Bo IDO 1, JUNCTION TEMPERATURE (cp 420 140. Fig. 9 ~ Normalized On-Resistancea Vs, Temperature"3875081 G E SOLID STATE 91 ef aa7soa1 oora4ie 2 Wf T39-09 Standard Power MOSFETs 2N6788 1900 0 . tetas . : tn) Com + Cyt Cog. Cay SHORTED Bz Sue = Cos Su See = 5 fon Cn gta 4 = = Ct4? Cpt 5 : | 5 3 = 10 < = #0 3 e 5 Z Sy 300 3 Q WwW 20 Ww 40 x Qo 4 ' 2 16 x Vig. ORAIN TO SOUACE VOLTAGE (VOLTSI Gy, TOTAL GATE CHARGE. (nc) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage on 60 - in os Vg * lov , J La ad I 02 Yigg 20v ond n - ip, DRAIN CURRENT (AMPERES) a Aysjon)- ORAIN TO SOLACE ON RESISTANCE (OHMS) fpstony MEASURED WITH CURRENT PULSE OF 20 ys DURATION, INITIAL Fy 25C {HEATING EFFECT OF 20 ps PULSE IS MINIMAL) 1 i 1 f a 10 20 a9 ww 50 1S 100 125 159 Ig, DRAIN CURRENT (AMPERES) Te. CASE TEMPERATURE (C} Fig, 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs, Case Temperature 20 Pp, POWER DISSIPATION (WATTS) 3 0 20 40 ou 80 100 120 140 Te, CASE TEMPERATURE 1C} Fig. 14 Power Vs. Temperature Derating Curve 359~ 3875081 G E SOLID STATE O2 DEW 387508) oo1a447 4 i T- 39-09 Standard Power MOSFETs 2N6788 }- PULSE WIDTH YGSton) 10 INPUT os, Vestot ov A INPUT PULSE AISE TIME INPUT PULSE FALL TIME \g Vostetts wien TEXTRONIX outrut PULSE ae Yosten GEA, nores WHEN MEASURING RISE TIME, Vggtony SHALL BE AS SPECIFIED ON THE INFUT : WAVEFORM WHEN MEASURING FALL TIME, Vggrarn SHALL BF SPECIFIEO ON THE INPUT WAVEFORM THE INFUT TRANSITION AND DAAIN VOLTAGE RE SPONSE DETECTOR SHALL HAVE RISC ANO FALL RESPONSE TIKES SUCH THAT NOTES: DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER }. UHGO6) CASE GROUNDED THAN THE PAECISION OF MEASUREMENT. THE CURRENT SHALL Bf SUFFI 1. GAQUNOED CONNECTIONS COMMON TO GROUND PLANE OR Z0ARD CIENTLY SHALL SO THAT DOUBLING IT ODES NOT AFFECT TESTS RESULTS Y PULSE WIDTH #3 ps, PERIOD 1 ms, AMPLITUDE 10V. GREATER THAN THE PAECISION OF MEASUREMENT Fig. 15 Switching Time Test Circult GLOCKING DIGOE gn NOTES 1. SET Vpg TO THE VALUE SPECHFIEO UNDER DETAILS USING AO Is PULSE WIDTH WITH A MINIMUM OF | MINUTE BETWEEN PULSES INCREASE Vgg UNTIL THE SPECIFIED VALUE OF tg AND Vpg ARE OBTAINED CASE TEMPERATURE 25C + 2 SELECT Rg SUCH THAT Ige Rs 2521 0 Ver Fig. 16 Safe Operating Area Tast Circuit 360 __==