RECTIFIER Optimized for line frequency rectifiers. Low on-state voltage, narrow Ve-bands for parallel operation. Self protected against transient over voltages. Guaranteed maximum avalanche power dissipation. DIODES Optimiert fur Anwendungen mit Netz- frequenz. Niedrige Durchlassspannung, enge Durchlass-Spannungsbereiche fur Parallelschaltung. Selbstschutz gegen transiente Uber- spannungen. Garantierte maximale Verlustleistung bei Avalanche. - BARRA RI - MBS ISL ke TLV ttt - ARBRE ATS ACRE RARE HHRAP ASV Ys BAG Avalanche ES SO eer Veen Medals pes Walaa tit fag besa Ver fo ote | Prow | Tw | Pine | Pirow | Mo/Fn | Pkg 1800 A 25C. |1,=85C| re ert nent hea e arr WJM JM ult Vv Vv A kA Vv ma | kW] C K/KW | Nm/kN 5SDA 09P**X3 2300 2000 1700} 1.20 1.35 850 | 14.5] 13.5 | 0.83:]/0.300] 50 | 160} 60 | 30 |3.5Nm| P 5SDA 08P**X4 2600 2300 2000} 1.35 1.50 #70 | 12.5 | 11.5 | 0.87 |0.390] 50 | 160 | 60 | 30 |3.5Nm] P 5SDA 07P**X5 3200 2900 1.50 1.70 690 | 10.0} 9.2 | 0.93. |0.520] 50 | 160] 60 | 30 |3.5 Nm] P 5SDA 06P**X6 3800 3200 1.70 2.00 600 8.2 7.6 | 1.01 {0.720) 50 | 160] 60 | 30 |3.5Nm] P 5SDA 05P**X7 5000 4400 3800] 2.00 2.40 520 7.6 7.0 | 1.10 11.010} 50 | 160] 60 | 30 |3.5Nm] P 5SDA 11D**02 1700 1400 1100] 1.05 1.25 1310 | 16.0 | 15.0 | 0.74 |0.250] 50 | 160] 40 8 |11kN] D 5SDA 10D**03 2300 2000 1700) 1.20 7.35 1140 | 14.5 | 13.5 | 0.83 |0.300] 50 | 160} 40 8 |11kN}] D 5SDA 09D**04 2600 2300 2000) 1.35 1.50 1020 | 12.5 | 11.5 | 0.87 |0.390] 50 | 160] 40 8 |11kN] D 5SDA 08D**05 3200. 2900 1.50 1.70 910 | 10.0 |. 9.2 } 0.93 |0.520) 50 | 160 | 40 8 |11kN} D 5SDA 07D**06 3800 3200 1.70 2.00 790 8.2 7.6 | 1.01 |0.720) 50 | 160} 40 8 |11kN] D 5SDA 06D**07 000 4400 3800) 2.00 2.40 690 7.6 7.0 | 1.10 ]1.010) 50 | 160) 40 8 |11kKN] D 5SDA 27F**02 2000 1700 1400] 1.05* | 1.20" | 2700 | 33.5 | 31.0 | 0.79 |0.090/ 100 | 160] 20 5 | 22kKN] F 5SDA 24F*"*03 2300 2000 1700} 1.20* | 1.35* | 2350 | 30.5 | 29.0 | 0.84 10.180] 75 | 160] 20 5 | 22kKN] F 5SDA 21F**04 3200 2900 2600] 1.35* | 1.50 | 2110 | 28.0 | 26.0 | 0.89 |0.170] 75 | 160] 2oO 5 |22kN] F 5SDA 19F**05 3200 2900 7.50 | 1.70 | 1870 | 25.0 | 23.5 | 0.95 |0.230] 75 | 160] 20 5 |22kN] F 5SDA 16F**06 3800 3200 1.70 | 2.00* | 1620 | 22.3 | 20.5 | 1.03 |0.320] 50 | 160 | 20 |22kN| F 5SDA 14F**07 5000 4400 3800} 2.00 | 2.40 | 1410 | 19.0 | 17.5 | 1.13 |0.440] 50 | 160 | 20 6 | 22 kN] F * at 4000 A, 25C X = 1 Flat-base, Anode to base, without lead, P1 X = 2 Flat-base, Cathode to base, without lead, P1 X = 3Flat-base, Anode to base, with lead, P2 X= 4 Flat-base, Cathode to base, with lead, P2 Normal Recovery Type and ordering Vasu Vinh ling tsi Veg fete Thaw] Plive | Pres |! Fy | ke number Tyan T.=85C) i a ie mn Ton Tt Vu dy *SVisi/ T00V Vv Vv A kA Vv mQ | C K/kKW KN 5SDD 40B0200 200 200 6130 | 50.0 | 45.0 | 0.80 |0.030|} 170} 10 5 22 B 5SDD 71B0200 200 200 7110 | 60.0] 55.0 | 0.74 |0.026] 170] 10 5 22 B 5SDD 51L**00 1) }2800 2600 2200)2000 1850 1600} 5150 | 70.0 | 65.0 | 0.77 .|0.082] 175/} 8 3 70 L 5SDD 33L**00 1) 5000 4800 4400/4000 3800 3600) 3300 | 54.0 | 50.0] 1.00 |0.130] 150] 8 3 70 L: 5SDD 60N**00 2) |2800 2600 2200/2000 1850 1600] 6200 | 95.0.| 87.0 | 0.73 10.070] 160) 6 2 90 N Note 1: For the type SSDD 51L**00 and 5SDD 33L"*00, Vey) at Ty, and SOHz is equal to 0.7 x Vis. Please contact us for further information Note 2: Advanced information Contact factory for information on our new 6000V diodes in D & F housings and our new 12000A/200V diode in the new C package. Please refer to page 27 for part numbering structure and ordering code. 20 ABB Semiconductors AG| 100 @ 140 f i" fy f+ \ \ f . lin | ~ SE Dimensions in mm. 2 center holes ~[ - ok 6 3,6x4 fo Tx i we \ \ bo 4 | | a \ | fy ete ot of ci | ie Wms 3.5 hr 4x MBx2.5. B D F 26+0.5 2640.5 2 center 2 center holes _ holes 2 center e.6x4 ea6x4 holes @3,51,5 L P41 P2 223 Nor-insulayed flexible wire iS mmF ABB Semiconductors AG 21