e
1
Typical Gain vs. Frequency
(as mea s ured in a broadband c ircuit)
8
9
10
11
12
13
400 500 600 700 800 900
Frequenc y (MHz)
Gain (dB)
VCC = 28 V
ICQ = 2 x 200 mA
Pout = 110 W
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 40 Vdc
Collector-Base Voltage VCBO 65 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC20 Adc
Total Device Dissipation at Tflange = 25°C PD330 Watts
Above 25°C derate by 1.89 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W
PTB 20101
175 Watts P-Sync, 470–860 MHz
UHF TV Power Transistor
Description
The 20101 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. It is
rated at 175 watts P-sync minimum output power. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
28 Volt, 860 MHz Characteristics
- Output Power = 175 Watts P-Sync
- Output Power = 110 (CW)
- Gain = 10.0 dB Min
55% Collector Efficiency at 110 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20224
20101
LOT CODE
9/28/98
PTB 20101
2
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts
Breakdown Voltage C to E V BE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 —
Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz Cob —85—pF
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Output Power (P-Sync)
(VCC = 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Pout 175 — — Watts
Gain
(VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, Gpe 10.0 11 — dB
f = 860 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, ηC55 58 — %
f = 860 MHz)
Load Mismatch Tolerance
(VCC = 28 Vdc, Pout = 175 W, ICQ = 200 mA per side, Ψ— — 5:1 —
f = 860 MHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side)
Frequency Z Source Z Load
MHz R jX R jX
450 0.4 -1.0 2.0 0.3
550 0.5 -1.3 1.6 0.0
650 0.7 -1.8 1.3 0.0
750 1.8 -2.0 1.0 -0.8
850 2.7 -0.5 0.9 -1.2
Z Sourc
e
Z Load
9/28/98
PTB 20101
3
e
Efficiency vs. Frequency
(as measured in a broadband circuit)
50
52
54
56
58
60
400 500 600 700 800 900
Frequency (MHz)
Efficiency (%)
VCC = 28 V
ICQ = 2 x 200 mA
Pout = 110 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
