PD - 95572 IRFZ44ESPbF IRFZ44ELPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 0.023 G ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications. D 2 Pak TO-262 Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 48 34 192 110 0.71 20 220 29 11 5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 1.4 --- 62 C/W 1 07/19/04 IRFZ44ES/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 60 DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 15 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- Qg Total Gate Charge --- Qgs Gate-to-Source Charge --- Qgd Gate-to-Drain ("Miller") Charge --- td(on) Turn-On Delay Time --- tr Rise Time --- td(off) Turn-Off Delay Time --- tf Fall Time --- V(BR)DSS Typ. --- 0.063 --- --- --- --- --- --- --- --- --- --- 12 60 70 70 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1360 420 160 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.023 VGS = 10V, ID = 29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 60 ID = 29A 13 nC VDS = 48V 23 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 29A ns --- RG = 15 --- RD = 1.1, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 --- --- showing the A G integral reverse --- --- 192 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 520H Pulse width 300s; duty cycle 2%. Uses IRFZ44E data and test conditions RG = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ44ES/LPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C 100 TJ = 175 C 10 V DS = 25V 20s PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 2.5 5 1 VDS , Drain-to-Source Voltage (V) 1000 4 20s PULSE WIDTH TJ = 175 C 1 0.1 Fig 1. Typical Output Characteristics 1 4.5V 10 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 48A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFZ44ES/LPbF 2500 20 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) Ciss 1500 Coss 1000 Crss 500 VDS = 48V VDS = 30V 16 12 8 4 1 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 TJ = 25 C 1 0.5 10us 100 100 T = 175 C J 100us 10 1ms 1.0 1.5 2.0 Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 1 10ms TC = 25 C TJ = 175 C Single Pulse V GS = 0 V VSD ,Source-to-Drain Voltage (V) 4 ID = 29 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44ES/LPbF RD V DS 50 50 V GS D.U.T. RG 40 + V DD ID , Drain Current (A) ID , Drain Current (A) 40 - 10V 30 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 20 VDS 10 90% 10 0 0 25 50 25 75 100 125 150 50 125 C) TC ,75Case 100 Temperature (150 TC , Case Temperature ( C) 175 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ44ES/LPbF 500 TOP 400 BOTTOM ID 12A 21A 29A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFZ44ES/LPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44ES/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H L OT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" INT ERNAT IONAL RECT IFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER F530S ASS EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE 8 PART NUMBE R F 530S DAT E CODE P = DES IGNAT ES LE AD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS S E MB LY S IT E CODE www.irf.com IRFZ44ES/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L L OT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IF IER L OGO AS S EMBLY L OT CODE PART NUMBER DAT E CODE YE AR 7 = 1997 WEE K 19 LINE C OR INT ERNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBL Y S IT E CODE 9 IRFZ44ES/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/