2N5684 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for use in high–power amplifier and switching circuit applications.

•High Current Capability — IC Continuous = 50 Amperes.

•DC Current Gain —

hFE = 15–60 @ IC = 25 Adc

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N5685

ÎÎÎÎ

2N5684

2N5686

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

300

1.715

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.584

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

300

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Derating

TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

250

150

100

200

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5684/D

 Motorola, Inc. 1995







*Motorola Preferred Device

50 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

300 WATTS



CASE 197A–05

TO–204AE





REV 7

  

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Note 1) 2N5685

(IC = 0.2 Adc, IB = 0) 2N5684, 2N5686

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N5685

(VCE = 40 Vdc, IB = 0) 2N5684, 2N5686

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5685

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5684, 2N5686

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150

C) 2N5685

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150

C) 2N5684, 2N5686

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N5685

(VCB = 80 Vdc, IE = 0) 2N5684, 2N5686

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 1)

(IC = 25 Adc, VCE = 2.0 Vdc)

(IC = 50 Adc, VCE = 5.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

5.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (Note 1)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N5684

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5685, 2N5686

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

2000

1200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

*Indicates JEDEC Registered Data.

Note 1: Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Figure 2. Switching Time Test Circuit

1.0

0.5

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

0.7

0.5

0.2

0.07

0.05

0.02

0.01 0.7 1.0 2.0 3.0 5.0 7.0 10 50

TJ = 25

IC/IB = 10

VCC = 30 V

0.03

0.3

0.1

2N5684 (PNP)

2N5685, 2N5686 (NPN)

+2.0 V

≤

20 ns –12 V

10 to 100

DUTY CYCLE

≈

2.0%

VCC –30 V

TO SCOPE

≤

20 ns

VCC –30 V

TO SCOPE

≤

20 ns

+10 V

–12 V

10 to 100

DUTY CYCLE

≈

2.0%

≤

20 ns VBB +4.0 V

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

  

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

JC(t) = r(t)

JC = 0.584

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.05

0.02

0.01

SINGLE PULSE

0.1

1000

0.2

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

0.1 2.0 3.0 7.0 10 20 30 50 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

2.0

IC, COLLECTOR CURRENT (AMP)

TJ = 200

CURVES APPLY BELOW

RATED VCEO

dc 1.0 ms

500

1.0

0.5

0.2

5.0

2N5683, 2N5685

100

5.0 ms

2N5684, 2N5686

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

4.0

0.5

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.6

0.4

0.2 0.7 1.0 2.0 3.0 7.0 20 50

TJ = 25

IB1 = IB2

IC/IB = 10

VCE = 30 V

0.3

t, TIME ( s)

5.0

5000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

3000

1000

700

TJ = 25

0.8

3.0

2000

2N5684 (PNP)

2N5685, 2N5686 (NPN)

Cib

2N5684 (PNP)

2N5685, 2N5686 (NPN) Cob

Cob

Cib

  

4Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

500

0.5

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

100

hFE, DC CURRENT GAIN

TJ = +150

+25

–55

7.0

200

300 VCE = 2.0 V

VCE = 10 V

3.0 30

PNP

2N5684

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

TJ = +150

+25

–55

VCE = 2.0 V

VCE = 10 V

NPN

2N5685, 2N5686

Figure 9. Collector Saturation Region

2.0

0.1 IB, BASE CURRENT (AMP)

00.2 1.0 2.0 5.0 10

0.8

0.4

IC = 10 A

TJ = 25

25 A

1.2

1.6

0.5 3.0

40 A

0.1 IB, BASE CURRENT (AMP)

0.2 1.0 2.0 5.0 10

IC = 10 A

TJ = 25

25 A

0.5 3.0

40 A

0.3

2.5

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

2.0

1.5

1.0

0.5

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 2.0 V

7.0

2.0

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

1.6

1.2

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

VBE @ VCE = 2.0 V

500

0.5

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

100

7.0

200

300

3.0 30

2.0

0.8

0.4

1.2

1.6

  

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

–Q–

–Y–

  

6Motorola Bipolar Power Transistor Device Data

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2N5684/D

*2N5684/D*

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