NTE133 - NTE ELECTRONICS, INC.

NTE133

N−Channel JFET Silicon Transistor

General Purpose AF Amplifier

TO106 Type Package

Absolute Maximum Ratings: (TA = +255C unless otherwise specified)

Drain−Source Voltage, VDS 25V..........................................................

Drain−Gate Voltage, VDG 25V............................................................

Gate−Source Voltage, VGS −25V.........................................................

Gate Current, IG10mA..................................................................

Total Device Dissipation (TA = +255C), PD300mW.........................................

Derate Above 255C 2mW/5C.......................................................

Operating Junction Temperature Range, TJ−555 to +1505C..................................

Storage Temperature Range, Tstg −555 to +1505C..........................................

Lead Temperature (During Soldering, 1/16” from case for 10sec), TL+2605C...................

Electrical Characteristics: (TA = +255C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gate−Source Breakdown Voltage V(BR)GSS IG = 15A, VDS = 0 −25 − − V

Gate Reverse Current IGSS VGS = 20V, VDS = 0 − − −1 nA

VGS = 20V, VDS = 0, TA = +1505C− − −15A

Gate−Source Cutoff Voltage VGS(off) ID = 15A, VDS = 15V − − −6.5 V

Gate−Source Voltage VGS ID = 505A, VDS = 15V −0.4 − −6.0 V

Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0 0.5 −15 mA

Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1000 −7500 5mho

Rev. 10−13