Photon Detection Solutions
For Health, Safety and
Security Applications
Photon detection for
tomorrow’s cutting-edge
applications.
2www.excelitas.com
At Excelitas, we’re sensing what you need for a healthier, cleaner and safer tomorrow. From
Photon Counting Modules to Silicon Detectors, InGaAs Detectors, and Pulsed Laser Diodes,
our photon detection technologies are addressing your high-performance and high-volume
applications. We have the detection technologies and capabilities to enhance and accelerate your
OEM designs. You can depend on our seven world-class design, manufacturing and R&D facilities
including: Montreal, Canada; Wiesbaden, Germany; Fremont, USA; Singapore; Manila,
Philippines; Shenzhen, China; and Batam, Indonesia. We’re sensing what you need.

• SPCMs based on high-performing APDs – for visible and NIR single photon counting
• CPMs and modules for lowest dark noise applications
• CCD cameras – for high speed imaging
• PIN and APD hybrid receivers – for high signal detection

• Photodiode solutions with scintillators for x-ray scanners

• Si and InGaAs APDs and PIN photodiodes – for industrial applications
and high-volume laser range nding
• Si APD arrays – for beam positioning and spectrometers
• Large-area/UV-enhanced APDs – for molecular imaging, high-energy radiation detection

• Smoke detection components
• Ambient light sensors
• Si-photodiodes and-transistors
• Infrared switches

• High power laser diodes – for laser range nding
• Infrared emiing diodes – for smoke detection and safety curtains



• Luminescence and uorescence
for analytical and clinical diagnostics
• Photon counting, particle sizing
• PET, CT, and MRI scanning

• X-ray scanning of luggage,
cargo and food
• Laser range nding – industrial
and consumer
• Smoke detection
• Safety curtains
Making your World Healthier,
Safer & More Secure.
3
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SECTION 1
Modules and Optical Receivers 4
SECTION 2
14Photodiode Arrays for X-Ray Security Scanning
SECTION 3
16Photodiodes for High-Performance Applications
SECTION 4
24Photodiodes & -Transistors for High-Volume Applications
SECTION 5
38Pulsed Laser Diodes and Infrared LEDs (IREDs)
MODULES &
RECEIVERS
FOR ANALYTICAL
& MOLECULAR
APPLICATIONS

4

• Particle sizing
• Confocal microscopy
• Photon correlation spectroscopy
• Quantum cryptography
• Astronomical observation
• Optical range nding
• Adaptive optics
• Ultra sensitive uorescence

• Peak photon detection efciency
at 650 nm: 65 % typical
• Active area: 180 µm diameter
• Gated output
• Single +5 V supply
• FC receptacle option for ber coupling
• EU RoHS compliant
• Array of 4 channels available

SPCM-AQRH is a self-contained module that detects single photons of light over the 400 nm to
1060 nm wavelength range - a range and sensitivity that oen outperforms a photomultiplier tube.
e SPCM-AQRH uses a unique silicon avalanche photodiode (SLiK®) with a circular active area
that achieves a peak photon detection eciency of more than 65 % at 650 nm over a 180 µm diam-
eter. e photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabi-
lized performance despite ambient temperature changes. Circuit improvements have reduced the
overall power consumption.
Count speeds exceeding 20 million counts per second (Mc/s) are achieved by the SPCM-AQRH-1X
module (> 30 million counts per second on some models). ere is a “dead time” of 35 ns between
pulses but other values can be set at the factory.
As each photon is detected, a L pulse of 2.5 Volts (minimum) high into a 50 Ohm load and 15 ns
wide is output at the rear BNC connector. e module is designed to give a linear performance at a
case temperature between 5˚ C and 40˚ C.
e SPCM is also available in a 4 channel array format, the SPCM-AQ4C. It is a module of 4 APDs
with single power supply and 4 individual outputs.
is series of photon counting modules are designed and built to be fully compliant with the Euro-
pean Union Directive 2002/95EEC - Restriction of the use of certain Hazardous Substances in elec-
trical and electronic equipment (RoHS).
Single Photon
Counting Modules
(SPCM)
www.excelitas.com
Single Photon Counting Modules – SPCM
Product Table
Part Number
Unit
SPCM-AQRH-10
SPCM-AQRH-11
SPCM-AQRH-12
SPCM-AQRH-13
SPCM-AQRH-14
SPCM-AQRH-15
SPCM-AQRH-16
SPCM-AQ4C
C30902SH-TC1
C30902SH-DTC2
mm
Photo
Sensitive
Diameter
0.18
0.18
0.18
0.18
0.18
0.18
0.18
Fibered
0.475
0.475
c/s
1500
1000
500
250
100
50
25
500
2500
350
Maximum
Dark Count
Rate
%
65 %
65 %
65 %
65 %
65 %
65 %
65 %
60 %
>5 %
>5 %
Photon Detection
Efficiency
@ 700 nm
c/s
25M
25M
25M
25M
25M
25M
25M
>2M / channel
-
-
Max. Count Rate
before Saturation
ns
32
32
32
32
32
32
32
50
-
-
Dead Time
ns
15
15
15
15
15
15
15
30
-
-
Pulse Width
1. C30902SH-TC (0º C operation), 2. C30902SH-DTC (-20º C operation)
Characteristics SPCM Series
Graph 1
Photon Detection Efficiency (Pd)
Wavelength (nm)
80
70
60
50
40
30
20
10
0
300 500 700 900 1100
Single Photon Counting Modules – SPCM
5
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Package Drawing – TO-8 Flange
Figure 3
Mechanical Dimensions of the SPCM-AQ4C
Figure 2
Mechanical Dimensions of the SPCM-AQRH Series
Figure 1
ø
Single Photon Counting Modules – SPCM
1. P- types are photon counting suitable CPM or module types.
When ordering please add -P : e.g.: C993-P, MH984-P
2. Also order number
CPM Tube
Model
(also as
P-Type 1, 2
C911
C1311
C1911
C922
C1322
C1922
C943
C1343
C1943
C984
C1384
C1984
C993
C1393
C1993
C963
C1363
C1963
C973
C1373
C1973
Unit
Spectral
Response
115 - 200
165 - 320
185 - 650
300 - 670
185 - 750
185 - 850
185 - 900
nm
Active Dia-
meter (min.)
5
9
15
5
9
15
5
9
15
5
9
15
5
9
15
5
9
15
5
9
15
mm
Remarks,
Other Available Types
MgFl
window available
Quartz, Boro.
window available
Quartz window
available
Quartz window
available
-
Dark Current /
pA @ 1e5
0.1
0.2
0.5
0.5
1
2
2
8
20
1
4
10
2
8
20
20
80
200
100
400
1000
Gain (typ.)
Equivalent
Noise Input
1.0 e-17
2.0 e-17
3.0 e-17
1.0 e-17
2.0 e-17
3.0 e-17
1.0 e-17
2.0 e-17
3.0 e-17
6.0 e-18
1.0 e-17
2.0 e-17
1.0 e-17
2.0 e-17
3.0 e-17
4.0 e-17
8.0 e-17
1.0 e-16
1.5 e-16
3.0 e-16
5.0 e-16
(ENI)/W/√(Hz)
at Peak Resp.
Wavel. (typ.)
Peak
Wavelength
140
200
400
350
450
450
500
(typ., nm)
Dark Counts
for -P Type
and MH-P
0.1
0.4
1
1
4
10
10
40
100
2
10
20
5
20
50
100
400
1000
500
2000
5000
(typ.)
Channel Photomultipliers & Modules
Product Table
6www.excelitas.com

• Photon counting
• Luminescence & uorescence spectroscopy
• Microplate readers
• Clinical diagnostics
• DNA & cell analysis
• Particle measurements
• Industrial spectroscopy
• Nucleic acid amplication (PCR)

• Extremely low background noise
• Best low light level detection limits
• High dynamic range & gain
• Low microphonic & magnetic sensitivity
• Compact size & rugged design
• Multiple photocathode and window selections
• Plug and play for shortest design-in and
time-to-market
• Customizations and added features available

Excelitas’ Channel Photomultiplier (CPM) Technology oers a portfolio of ultra-high sensitivity op-
tical detectors designed for extremely low noise, high dynamic range, highest gain and fast response
for analytical, scientic and clinical diagnostic applications. A variety of easy-to-use modules with dif-
ferent read-out electronics is available, enabling customers to benet from the unique performance
characteristics of the CPM technology.
Depending on the application requirements, customers can select plug-and-play modules for photon
counting, DC applications, photon-counting detection up to gigacount range or any other method
of photon detection. Added features like thermoelectric cooling, shuering and other sorts of cus-
tomization are available upon request. e CPM modules are ideally suited for use in human and
environmental health, supporting the market needs for ever smaller sample sizes and lower detection
limits in applications like microplate readers, nucleic acid amplication (PCR), luminescence or
uorescence spectroscopy.
Channel Photomultipliers & Modules
Ordering Guide
Series
MH series
MH P-type
MD series
MP series
MPRS series
MPC series
GPDM series
All modules are available with optical input
aperture of 9 mm (9xx-series), 13 mm (13xx-series)
and 19 mm (19xx-series).
Modules with direct anode output (com-
prising CPM and high voltage supply only)
MH modules with CPM tube specially
selected for photon-counting applications
Modules for DC measurement,
analog output: 0 to 10 Volts
Modules optimized for photon counting,
digitized output via TTL interface
Modules optimized for photon counting,
digitized output via RS232 interface
Temperature stabilized (TE-cooled) MP
modules, customized OEM projects only
Highest dynamic range (single photon/s
to 1G photon/s range) module with
digital output for uorescence and
luminescence measurements and other
demanding applications.
PHOTOMULTIPLIERS
FOR MOLECULAR DETECTION IN
ANALYTICAL
APPLICATIONS
& MEDICAL
DIAGNOSTICS

Channel Photomultipliers
& Modules (CPM)
7
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General Specification
Technical Specification
Parameter
Window materials
Photocathode materials
Max. input current
Bias current (typ.)
Supply voltage/
Input voltage
Current amplification
Max. anode current
Linear anode current
Linear count rate (typ.)
Response time
Transit time
Transit time spread
Output pulse width (FWHM)
Over-illumination protection
Output impedance
Active gate control
GATE voltage
Operating temperature
Storage temperature
Weight
Output
Remarks / Conditions
MgF2, quartz, UV glass, borosilicate
CsI, CsTe, low noise bialkali, bialkali, yellow
enhanced, multialkali, extended red multialkali
Module input current
CPM input current
Modules include CPM high voltage supply
6e6 (typ.), 1e8 (max.)
Output current (max. 30 sec.)
Max. (DC linearity limit) 10 % of bias current1
(see note 1)
Output pulse rise time
Timing resolution / jitter
Typical value
Active gate control
Termination for fast output pulse
TTL-pulse, active high
TTL-level: low to high / high to low
+5 to +40° C (other temperatures on request)
-20 to +50° C
max. 350 g / 420 g / 450 g
(modules 9xx-series/13xx-series/19xx-series)
Symbol
IDD
Ibias
VDD
Ianode
Ilin
cpslin
tresp
tt
tts
PW
Vgate
top
tstore
CPM (tube)
✓
✓
40
2000 V (typ.)
2600 V (max.)
✓
10
✓
3
17
2
6
50
✓
✓
✓
Anode signal
MH-Module
MH-P-Type
✓
✓
200
+5 to +5.5
(max.)
✓
10
✓
3
17
2
6
50
✓
100 / 300
✓
✓
Anode sig.
MD
✓
✓
250
+5 to +5.5
(max.)
✓
✓
✓
100 / 300
✓
✓
0–10 V
MP
MPC
✓
✓
2502
+5 to +5.5
(max.)
✓
20
3
20
✓
50
✓
0.02 / 0.02
✓
✓
TTL
MPRS
✓
✓
250
+5 to +5.5
(max.)
✓
10
✓
✓
✓
✓
RS232
GPDM
✓
✓
300
+5 to +5.5
(max.)
(see note 3)
1000
✓
Digital
✓
100 / 300
✓
✓
USB/SPI
Unit
mA
µA
Volts
dc
µA
Mcps
ns
ns
ns
ns
Ohms
µs
1. For long term operation: max. average output count rate of < 100 Kcps (anode current of < 100 nA) is recommended
2. Cooling input power: 9 VDC /3.5 A Fan input power: 24 VDC / 100 mA
3. Gain setting depending on operating mode – see separate datasheet
Channel Photomultipliers & Modules
1E-14
1E-15
1E-16
1E-17
1E-18
ENI (W)
Wavelength (nm)
Equivalent Noise Input
Graph 2
–– C911
–– C922
–– C942
–– C962
–– C972
–– C982
–– C992
100 200 900300 400 500 600 700 800
Wavelength (nm)
100 200 900300 400 500 600 700 800
Quantum Efficiency (%)
100
10
1
0.1
Spectral Response
Graph 1
–– C911
–– C921
–– C922
–– C943/
942
–– C943
–– C944
–– C963/
962
–– C973/
972
–– C973
–– C973-
13
–– C983/
982
–– C983
–– C993/
992
Housing / Package Drawings
Technical Specification
Dimensions (mm)
Module Type
9xx
13xx
19xx
A
4.5
4.5
4.5
B
36
36
36
C
4.5
7
7
D
33
33
33
E
127
132
137
F
120
125
130
G
30
30
30
H
20
20
20
I
19.5
19
19
J
10
10
10
K
18
22.1
22.1
L
45
50
50
M
45
50
50

• Multimodal analytical measurements
• Luminescence spectroscopy
• Time-resolved uorescence
• High through-put screening
• DNA & cell analysis
• Microplate reading

• Extremely low background noise
• Highest dynamic range
• High gain
• 4 different operating modes
• Variable Interface options
• Best suited for multimodal analytical
applications

e new CPM Gigahertz Photon Detection Module (GPDM) provides the capability of ultra
low-light-level detection in DC mode operation. Using DC mode operation with single-photon-
sensitivity makes the GPDM module superior to traditional counting circuits with their performance
limitation at high-light-levels. e fully equipped module includes the Channel Photomultiplier,
the high voltage supply, analog current amplier, A to D conversion and a microcontroller with
USB/SPI interface allowing the optimal adaptation to a wide range of applications. Additional fea-
tures like the synchronization I/O oer the possibility to synchronize the measurement with other
devices in the application like ash lamp trigger etc. Utilizing the generic noise advantage of the CPM
technology together with highest dynamic range electronics the GPDM represents a real innovation
in photon detection, well suited to increase overall OEM system performance.
PHOTOMULTIPLIERS
FOR MOLECULAR DETECTION IN
ANALYTICAL
APPLICATIONS
& MEDICAL
DIAGNOSTICS
Gigahertz Photon Detection Module
Technical Specification
Parameter
Condition Max Units
Supply voltage
Supply current
Detection range1
Switching dead time
In fast switching mode
QE2
CPM gain3
Sample time
Acquisition time
Interface
-
-
Real counting mode
Straight output mode
Fast switching mode
HV reduction mode
w/o offset calibration
Including offset calibration
λ peak
-
Continuous data output
(under development)
Width of measurement
Window for ash sequence
measurements
USB 2.0
SPI (under development)
5.6
-
1e4
5e7
1e9
1e10
-
-
-
-
5000
5000
200
-
-
VDC
mA
Counts per second4
Counts per second4
Counts per second4
Counts per second4
ms
ms
Photoelectrons/
photons
-
ms
ms
µs
Mbit/second
Typ
5.35
300
-
-
-
-
1
20
20 %
adjustable
-
-
-
2
-
Min
5.0
-
1
1
1
3e5
-
-
-
1E3
200
1
3
-
-
1. See below performance characteristics
2. CPM characteristics can be matched to the application’s requirements – see spectral response curve
3. Gain pre-set to optimal single photons sensitivity
4. Actual output information is RLU (Relative Light Unit) – counts per second is the µC calculated value based on RLU
5. Recommended for best performance

Gigahertz Photon
Detection Module
Gigahertz Photon Detection Module
8www.excelitas.com
Block Diagram Gigahertz Photon Detection Module
Figure 1
Straight Output Mode
Graph 1
Measurement Bandwidth Straight Output Mode at 1 S/s
Data Readout, Pulses per second (Cps)
Relative Intensity of Light
1E+11
1E+09
1E+07
1E+05
1E+03
1E+01
1E-01
1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10
Relative Intensity of Light
1E+11
1E+09
1E+07
1E+05
1E+03
1E+01
1E-01
1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10
Fast Switching Mode
Graph 2
Measurement Bandwidth Extended Range/
Fast Switching Mode at 1 S/s
Data Readout, Pulses per second (Cps)
Relative Intensity of Light
1E+11
1E+09
1E+07
1E+05
1E+03
1E+01
1E-01
1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10
Real Counting Mode
Graph 4
Measurement Bandwidth Real Counting Mode at 1 S/s
Data Readout, Pulses per second (Cps)
Relative Intensity of Light
1E+11
1E+09
1E+07
1E+05
1E+03
1E+01
1E-01
1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10
High Voltage Reduction Mode
Graph 3
Measurement Bandwidth Extended Range/
HV Reduction Mode at 1 S/s
Data Readout conv. to Pulses per second (Cps)
9
www.excelitas.com Gigahertz Photon Detection Module
10 www.excelitas.com
HIGH SPEED
HIGH SENSITIVITY
LINEAR
CAMERAS
FOR MACHINE VISION
Applications
• High speed machine vision
• Postal / parcel sorting
• Web inspection
• Surface inspection
• OCR / barcode reading web inspection
Features and Benefits
• High speed, up to 80 MHz data rate.
• 14 µm square pixels in 512, 1024, 2048 or
4096 element resolutions.
• Small size 101.6 x 57.2 x 38.1 mm
• 8/10/12-bit output format
• High line rates up to 68 kHz
• 66 db dynamic range
• High sensitivity pinned photodiode
CCD sensor
• CameraLink™ base output
• User controlled smart pixel correction
• Antiblooming control
• Single 12 VDC power supply
• Electronic exposure control
• Adjustable gain levels
• Real time status LEDs
• Ultra-low image lag
• Square pixels with 100 % ll factor
• Extended spectral range –
200 – 1000 nm
Product Description
e SmartBlue™ digital linescan cameras incorporate the latest in photodiode array technology based
on the industry standard Reticon® devices with state of the art electronics and a robust industrial
camera housing. e linescan photodiode array is a pinned photodiode Charge Couple Device which
allows for high sensitivity, fast readout, while maintaining high dynamic range, and low image lag.
e SmartBlue™ cameras are cost eective high-performance digital linescan cameras, and feature a
CameraLink™ digital interface. ese cameras feature geometrically precise photodiode CCD image
sensor with 14 um square pixels with resolutions of 512, 1024, 2048 and 4096 pixels. is “next gen-
eration” array can achieve data rates up to 80 MHz with superior noise immunity, precise linearity,
and high CTE. e SmartBlue™ digital cameras are designed for high line rate applications with low
to moderate light conditions and where small size, and low cost are required.
SmartBlue™ Linear Camera
Technical Specification
Part Number Resolution Window Aperture Length Max. Line Rate
SB0440CLG-011
SB0440CLQ-011
SB1440CLG-011
SB1440CLQ-011
SB2480CLG-011
SB2480CLQ-011
SB4480CLG-011
SB4480CLQ-011
512
512
1024
1024
2048
2048
4096
4096
Glass
Quartz
Glass
Quartz
Glass
Quartz
Glass
Quartz
7.2 mm
7.2 mm
14.4 mm
14.4 mm
28.7 mm
28.7 mm
57.3 mm
57.3 mm
68 kHz
68 kHz
36.4 kHz
36.4 kHz
37.3 kHz
37.3 kHz
19.1 kHz
19.1 kHz
SmartBlue™ Linear Camera
MODULES AND OPTICAL RECEIVERS
CCD Linear Cameras – SmartBlue™ Linear Camera
Package Drawing*
Technical Specification
4.00 [101.6]
2.25 [57.2]
* not for SB4480CLX
Spectral Sensitivity Curve (1x Gain)
Technical Specification
Responsivity (V/mJ/cm2) QE (%)
Wavelength (nm)
250 350 450 550 650 750 850 950 1050
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
QE (right scale)
Responsivity (left scale)
11
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
Excelitas’ P-series linear imager combines the best features of high-sensitivity photodiode array de-
tection and high speed, charge-coupled scanning to oer an uncompromising solution to the increas-
ing demands of advanced imaging applications. ese high-performance imagers feature low noise,
high sensitivity, impressive charge-storage capacity, and lag-free dynamic imaging. e 14 μm
square contiguous pixels in these imagers reproduce images with minimum information loss and
artifact generation, while their unique photodiode structure provides excellent blue response extend-
ing below 200 nm in the ultraviolet. ese versatile imagers are available in array lengths of 512 to
4096 elements with either low-cost glass or UV-enhanced fused silica windows.
P-Series CCD Linear Array
Technical Specification
Part Number
Pixel Count
Elements
512
1024
2048
2048
4096
14 x 14
14 x 14
14 x 14
14 x 14
14 x 14
1
1
1
2
2
200 – 1000
200 – 1000
200 – 1000
200 – 1000
200 – 1000
40
40
40
80
80
RL0512P
RL1024P
RL2048P
HL2048P
HL4096P
Pixel Size
µm
Number of
Outputs
Spectral
Response
Range nm
Pixel
Data Rate
MHz
2500 : 1
2500 : 1
2500 : 1
2500 : 1
2500 : 1
Dynamic
Range
2 ø @ 5 V
2 ø @ 5 V
2 ø @ 5 V
2 ø @ 5 V
2 ø @ 5 V
Horizontal
Clocking
typ.
HIGH SPEED
HIGH SENSITIVITY
LINESCAN
IMAGERS
FOR MACHINE VISION

P-Series CCD Linear Array
CCD Linear Imagers
Quantum Efficiency
Technical Specification
Responsivity (V/mJ/cm2) QE (%)
Wavelength (nm)
250 350 450 550 650 750 850 950 1050
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
QE (right scale)
Responsivity (left scale)

• Web inspection
• Mail sorting
• Production measurement
• Position sensing
• Spectroscopy
• High speed document reading

• 2500:1 dynamic range
• Ultra-low image lag
• Electronic exposure control
• Antiblooming control
• Square pixels with 100 % ll factor
• Extended spectral range – 200 – 1000 nm
12 www.excelitas.com
HIGH SENSITIVITY
LARGE
FORMAT
PIXELS FOR
SPECTROSCOPY
Technical Specification

• Spectroscopy
• Colorimetry

• 2.5 mm photodiode aperture
• Extremely low dark leakage current
• Low power dissipation
• Clock-controlled sequential readout at
rates up to 1 MHz
• Single-supply operation with
HCMOS-compatible inputs
• Single shift register design
• Wide dynamic range
• Differential video output for clock noise
cancellation
• High saturation charge 10 pC (25 µm) or
20 pC (50 µm)
• Antiblooming function for low crosstalk
• Line reset mode for simultaneous reset of
all photodiodes
• Wide spectral response: 300 to 1000 nm
• Polished fused silica window
• Two on-chip diodes for temperature
monitoring

Excelitas’ L-series CMOS linear photodiode arrays oer a high-quality, low-cost solution for spec-
troscopy and colorimetry applications in the 300–1000 nm range. e L-series family’s combination
of high sensitivity, low dark current, low switching noise and high saturation charge provides excel-
lent dynamic range and great exibility in seing integration time. L-series sensors consist of a linear
array of silicon photodiodes, each connected to a MOS switch for readout controlled by an integrated
shi register scanning circuit. Under external clock control, the shi register sequentially enables each
of the switches, directing the charge on the associated photodiode to an output line. A dummy output
provides clock noise cancellation. L-series devices are mounted in ceramic side-brazed, 22-pin, dual-
inline packages with ground and polished fused silica windows and are pin-compatible with earlier
Excelitas SB and TB-series sensors. L-series models are available with pixel spacings of 25 μm and
50 μm and lengths from 128 to 1024 pixels. All models feature a 2500 μm pixel aperture to simplify
alignment in spectroscopic instruments.
P-Series CCD Linear Array
Pixel Pitch 25 µmPixels Pixel Pitch 50 µm
RL1201LGQ-711
RL1202LGQ-711
RL1205LGQ-711
RL1210LGQ-711
RL1501LFQ-711
RL1502LFQ-711
RL1505LFQ-711
–
128
256
512
1024
P-Series CCD Linear Array
Technical Specification
@ 5 V bias
pFPart Number
@ 2.5 V bias
pF
Video Capacitance
Sensitivity
C/J/cm2
–
–
–
–
9.1
14
25
6.7
10.2
15.4
28.7
–
–
–
2 x 10-4
2 x 10-4
2 x 10-4
2 x 10-4
4 x 10-4
4 x 10-4
4 x 10-4
50
50
50
50
50
50
50
10
10
10
10
20
20
20
70.000
70.000
70.000
70.000
100.000
100.000
100.000
0.2
0.2
0.2
0.2
0.4
0.4
0.4
RL1201
RL1202
RL1205
RL1210
RL1501
RL1502
RL1505
Saturation
Exposure
nJ/cm2
Saturation
Charge
pC
Dynamic
Range
Dark
Current Typ.
pA
Operating Temperature: 0˚C min. to +55˚C max.
Storage Temperature: -25˚C min. to +85˚C max.
Lag: <1 %
Saturation Voltage: 600 mV
L-Series CMOS
Linear Photodiode Array

Quantum Efficiency
Technical Specification
QE (%)
Wavelength (nm)
80
70
60
50
40
30
20
10
0
250 350 450 550 650 750 850 950 1050
CMOS Linear Photodiode Arrays – L-Series
13
www.excelitas.com

• Laser range nder
• Confocal microscopy
• Video scanning imager
• High speed analytical instrumentation
• Free space communication
• UV light sensing
• Distributed temperature sensing

• Ultra low noise
• High speed
• High transimpedance gain

ese modules comprise of a photodetector (PIN or APD) and a transimpedance amplier in the
same hermetically sealed package. Having both amplier and photodetector in the same package
allows low noise pickup from the surrounding environment and reduces parasitic capacitances from
interconnect allowing lower noise operation.
e hybrid amplier C30659 series includes an APD connected to a low noise transimpedance
amplier. 4 models are oered with Silicon APD and 2 models with InGaAs APD. Standard band-
width of 50 MHz and 200 MHz can accommodate a wide range of applications. Two C30659 models
are oered with the APD mounted on a ermo-electric cooler (the LLAM series) to help improving
noise or to keep the APD at constant temperature regardless of the ambient temperature.
e C30659 can be customized to meet application specic requirements by using one of the
Excelitas rear entry APDs, by choosing a custom bandwidth or by qualifying it to your environmental
conditions. Pigtailed versions are also available in a 14 pins DIL package allowing nearly
100 % coupling eciency.
e C30950EH oers a low cost alternative to the C30659. e amplier is designed to neutralize
the input capacitance of a unity voltage gain amplier. e C30919E uses the same architecture of
the C30950EH with the addition of a high voltage temperature compensation circuit which maintain
module responsivity constant over a wide temperature range.
Two HUV modules are oered with a PIN detector for low frequency high gain application, covering
a broad spectrum range from the UV to the near IR.
All optical receiver products can be qualied to meet the most demanding environmental
specication as described in MIL-PRF-38534.
PIN AND APD
RECEIVER
MODULES
FOR ANALYTICAL AND
INDUSTRIAL APPLICATIONS
Unit
C30902
C30817
C30954
C30956
C30645
C30645
C30817
C30817
C30662
C30954
UV-100
UV-215
Detector
C30659-900-R5BH
C30659-900-R8AH
C30659-1060-R8BH
C30659-1060-3AH
C30659-1550-R08BH
C30659-1550-R2AH
C30919E
C30950EH
LLAM-1550-R2AH
LLAM-1060-R8BH
HUV-1100BGH
HUV-2000BH
mm2
0.5
0.8
0.8
3
80 µm
200 µm
0.8
0.8
0.2
0.8
2.5
5.4
Active Diameter
MHz
200
50
200
50
200
50
40
50
50
200
1 kHz
1 kHz
Bandwidth
kV/W
460
2700
-
-
-
-
-
520
-
-
-
-
Responsivity,
830 nm
kV/W
400
3000
370
450
90 @ 1550 nm
340 @ 1550 nm
1000
560
340 @ 1550 nm
370
130 MV/W
130 MV/W
Responsivity,
900 nm
kV/W
-
-
200
280
-
-
250
140
-
200
-
-
Responsivity,
1060 nm
fW /√Hz
35
14
55
55
220
130
20
27
130
55
30
70
NEP
TO-8
TO-8
TO-8
TO-8
TO-8
TO-8
TO, 1 in
TO-8
TO-8 ange
TO-8 ange
Custom
Custom
Package
V
0.9
0.9
0.9
0.9
0.9
0.9
0.7
0.7
0.9
0.9
5 min
5 min
Output
Voltage Swing,
50 Ohm
Si PIN and APD Modules – InGaAs APD Modules
Product Table

Si PIN and APD Modules,
InGaAs APD Modules
Si PIN and APD Modules – InGaAs APD Modules
14 www.excelitas.com

ese photodiode arrays are used to generate an X-ray image by scanning an object line by line.
e X-rays are converted into light through the aached scintillator crystal. e light intensity is then
measured by the photodiodes. e boards are employing chip-on-board technology with optically
adapted scintillator crystals. e listed designs can be ordered as a standard part, but can also be cus-
tomized to meet the needs of a wide variety of applications. Excelitas custom photodiode arrays give
customers the option to choose the:
•activephotodiodearea
•totalnumberofelements
•overallPCBandphotodiodechipdimensions
•photodiodechipgeometryandorientation
•electro-opticalspecications
•singlesidedvs.doublesidedPCB
•alternativesubstratematerials(e.g.ceramic)
•electricalinterface(e.g.connector)
First stage amplication electronics can also be added to the custom board design to convert the
current generated by the photodiode into an easy to measure voltage.
Photodiode Arrays • VTA Series
Product Table
Symbol
Unit
Material Dimensions DesignDesign max
IDID
mm mm mm %mm2pA pA
Substrate
Active
Area
Photodiode
Chip Dimensions
Dark Current
@ H = 0,
VR = 10 mV
FR4
FR4
FR4
FR4
FR4
FR4
FR4
FR4
43.2 x 67.7
8.0 x 25.4
16.0 x 25.4
8.0 x 40.0
16.0 x 40.0
10.2 x 19.0
17.8 x 19.0
17.8 x 25.4
1.41
2.58
2.58
5.20
5.20
3.44
3.44
0.50
1.40 x 3.50
1.51 x 3.25
1.51 x 3.25
2.45 x 3.15
2.45 x 3.15
2.30 x 4.95 (dual cell)
2.30 x 4.95 (dual cell)
1.59 x 2.34 (dual cell)
Pitch
2.1
1.6
1.6
2.5
2.5
1.2
1.2
0.8
<10
-
-
-
-
-
-
-
90
50
50
50
50
100
100
100
VTA2164H- D- NC- 00- 0
VTA1616H- H- SC- 01- 0
VTA1616H- L- SC- 02- 0
VTA2516H- H- SC- 01- 0
VTA2516H- L- SC- 02- 0
VTA1216H- H- NC- 00-0
VTA1216H- L- NC- 00-0
VTA0832H-H-NC- 00-0
Number
of
Elements
64
16
16
16
16
16
16
32
Scintillator
Crystal
Type
Custom
CsI
GOS
CsI
GOS
Custom
Custom
Custom
Light Current
Uniformity
@ 540 nm,
30 nW/cm2
±5
±5
±5
±5
±5
±5
±5
±5
typ max
CJCJ
pF
min
SR
A/WpF
Junction
Capacitance
@ H = 0, VR = 0 V
Radiometric
Sensitivity
@ 540 nm
<100
-
-
-
-
-
-
-
200
350
350
600
600
300
300
100
0.30
0.30
0.30
0.30
0.30
0.30
0.30
0.30

Le: 16 Element, 1.6 mm Pitch
Photodiode Array With Segmented
Csi Scintillator.
Right: 16 Element, 2.5 mm Pitch
Photodiode Array With GOS Low
Energy Screen Scintillator.
Electrical characteristics at TAmbient = 25 °C
Photodiode Arrays – VTA Series

• Luggage scanning
• Cargo & container scanning
• Food inspection
• Non-destructive testing

• Various crystal types available (CsI, GOS, etc.)
• Custom chip geometry & pitch
• Single or dual-sided assemblies
• High responsivity and low capacitance
• Onboard electronics available on a custom basis
• Multiple photodiode rows
typ
15
www.excelitas.com
Side 1 Detail VTA2164H-D
Figure 1
Pin Out VTA2164H-D
Side 2 Detail VTA2164H-D
Figure 2
Pos. of Top Diodes Rel. to Bottom Diodes VTA2164H-D
Figure 4
Chip Spacing Details, Side 1 (Typ) VTA2164H-D
Figure 3
Pin
Connector J1
(Top Diodes)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Connection
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
N / C
Common
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Connection
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
N / C
Common
Connector J2
(Bottom Diodes)
(Optical Center Line to Optical Center Line)Photosensitive Area 0.0545“ x 0.0385 (Typ.) or 0.0021 SQ. IN.
D32
D1
ø
Photodiode Arrays – VTA Series
16 www.excelitas.com

• Laser range nder
• Scanning video imager
• Confocal microscope
• Free space communication
• Spectrophotometers
• Fluorescence Detection
• Luminometer
• DNA sequencer
• Particle sizing

• Low noise
• High gain
• High quantum efciency
• Built-in TE-cooler option
• Various optical input options

ese rear entry “reach-through” silicon APDs oer the best compromise in terms of cost and per-
formance for applications requiring high speed and low noise photon detection from 400 nm up to
1100 nm. ey feature low noise, high quantum eciency and high gain while maintaining reasonably
low operating voltage. e active area varies from 0.5 mm to 3 mm to accommodate a large variety of
applications.
e “S” series of the C30902 family of APDs can be used in either their normal linear mode
(VR < VBR) or as photon counter in the Geiger mode (VR > VBR). is series is particularly well-
suited for ultra-sensitive photon measurements in biomedical and analytical instruments.
Precise temperature control can be achieved with a thermo electric cooler which can be used to
improve noise and responsivity or to maintain constant responsivity over a wide range of ambient
temperature.
High quantum eciency can be achieved from 1100 nm to 1700 nm with our InGaAs Avalanche Pho-
todiodes. ey were designed to maintain high gain, high quantum eciency and high bandwidth
even with their large area of up to 200 µm. e short distance between to window and the active area
allows easy interface with optical system.
Unit mm
0.8
3
0.8
0.5
0.5
0.5
0.5
0.5
1.5
0.25
0.25
0.8
1.5
3
Active
Diameter
C30817EH
C30872EH
C30884E
C30902BH
C30902BFCH
C30902BSTH
C30902EH
C30902SH
C30916EH
C30921EH
C30921SH
C30954EH
C30955EH
C30956EH
pF
2
10
4
1.6
1.6
1.6
1.6
1.6
3
1.6
1.6
2
3
10
Capaci-
tance
ns
2
2
1
0.5
0.5
0.5
0.5
0.5
3
0.5
0.5
2
2
2
Rise/Fall
Time
nA
50
100
100
15
15
15
15
15
100
15
15
50
100
100
Dark
Current
V
300
325
190
185
185
185
185
185
315
185
185
300
315
325
Breakdown
Voltage
min
V
475
500
290
265
265
265
265
265
490
265
265
475
490
500
Breakdown
Voltage
max
V/° C
2.2
2.2
1.1
0.7
0.7
0.7
0.7
0.7
2.2
0.7
0.7
2.4
2.4
2.4
Tempera-
ture
Coefficient
120
60
100
150
150
150
150
250
80
150
250
120
100
75
Typical
Gain
A/W
77
77
77
77
128
77
128
Responsivity
830 nm
A/W
75
37
63
60
60
60
60
108
50
60
108
75
70
45
Responsivity
900 nm
A/W
9
8
12
36
34
25
Responsivity
1060 nm
fW / √Hz)
1
30
13
3
3
3
3
0.9
20
3
0.9
13
14
25
NEP
TO-5
TO-8
TO-5
Ball lens TO-18
FC receptale
ST receptale
TO-18, at window
TO-18, at window
TO-5
TO-18, at window
TO-18, light pipe
TO-5
TO-5
TO-8
Package
Avalanche Photodiodes – Silicon APDs
Technical Specification
AVALANCHE
PHOTODIODES
FOR INDUSTRIAL
& ANALYTICAL
APPLICATIONS
Avalanche Photodiodes – Silicon and InGaAs APDs
Avalanche Photodiodes
Silicon and InGaAs APDs

17
www.excelitas.com
Unit mm
0.5
0.5
0.8
0.8
1.5
1.5
3
Active
Diameter
C30902SH-TC
C30902SH-DTC
C30954E-TC
C30954E-DTC
C30955E-TC
C30955E-DTC
C30956E-TC
mm2
0.2
0.2
0.5
0.5
1.8
1.8
7
Active
Area
pF
1.6
1.6
2
2
3
3
10
Total
Capaci-
tance
ns
0.5
0.5
2
2
2
2
2
Rise/Fall
Time
nA
2
1
50
50
100
100
100
Dark
Current
V
225
225
300
300
315
315
325
Breakdown
Voltage
min
V
-
-
475
475
490
490
500
Breakdown
Voltage
max
0.7
0.7
2.4
2.4
2.4
2.4
2.4
Tempera-
ture
Coefficient
250
250
120
120
100
100
75
Typical
Gain
A/W
128
128
-
-
-
-
-
Respon-
sivity
830 nm
A/W
108
108
75
75
70
70
45
Respon-
sivity
900 nm
A/W
-
-
-
-
-
-
-
Respon-
sivity
1060 nm
pA/sqrt(Hz)
0.04
0.02
0.2
0.04
0.2
0.05
0.2
Noise
Current
TO-8 ange
TO-8 ange
TO-8 ange
TO-8 ange
TO-8 ange
TO-8 ange
TO-8 ange
Package
Silicon APD – TE-Cooled
Product Table
TC stands for single stage cooler, operating temperature 0° C
DTC stands for double stage cooler, operating temperature -20° C
Package Drawing – TO-8 Flange
Figure 1
Typical TO-5 Package*
Figure 2
Typical TO-8 Package*
Figure 3
Ceramic Carrier
Figure 4
Typical TO-18 Package*
Figure 5
Typical Spectral Responsivity @ 22º C
Graph 1
Responsivity (A/W)
Wavelength (nm)
1000
100
10
1
400 500 600 700 800 900 1000 1100
–– C30902EH, C30921EH –– C30902SH, C30921SH
Avalanche Photodiodes – Silicon and InGaAs APDs
*Note: Package dimension for indication only. Exact package dimension can be found on products datasheets.
Unit µm
200
200
80
80
50
50
Active
Diameter
C30662EH
C30662ECERH
C30645EH
C30645ECERH
C30644EH
C30644ECERH
pF
2.5
2.5
1.25
1.25
0.6
0.6
Capacitance
800
800
1000
1000
2000
2000
BW
70
70
35
35
25
25
Dark
Current
V
40
40
40
40
40
40
Breakdown
Voltage
min
V
90
90
90
90
90
90
Breakdown
Voltage
max
V/°C
0.14
0.14
0.14
0.14
0.14
0.14
Temperature
Coefficient
10
10
10
10
10
10
Typical
Gain
A/W
9.3
9.3
9.3
9.3
9.3
9.3
Responsivity
1550 nm
fW/sqrt(Hz)
100
100
25
25
15
15
NEP
TO-18
Ceramic carrier
TO-18
Ceramic carrier
TO-18
Ceramic carrier
Package
InGaAs APD
Product Table
MHz nA
18 www.excelitas.com

C30927 series of quadrant Si Avalanche Photodiode and the C30985E multi-element APD array
utilize the double-diused “reach-through” structure. is structure provides ultra high sensitivity
at 400-1000 nm.
e C30927 quadrant structure has a common avalanche junction, with separation of the quadrants
achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there
is no dead space between the elements and therefore no loss of response at boresight.
e C30927EH-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm re-
spectively. Each device type will provide high responsivity and excellent performance when operated
within about 50 nm of the specied wavelength.
e C30985E is a 25 element monolithic linear APD array having a high inter-electrode resistance
with a 75 μm dead space between the elements. Packages have a common ground and bias with a
separate lead for each element output.
AVALANCHE
PHOTODIODES
FOR ANALYTICAL
APPLICATIONS
Avalanche Photodiodes – Si APD Arrays
Product Table
Part Number
Unit
Number
of Elements
C30927EH-01
C30927EH-02
C30927EH-03
C30985E
mm
4
4
4
25
Photo Sensitive
Diameter
mm
1.5
1.5
1.5
0.3
Responsivity
A/W
15(@ 1060 nm)
62(@ 900 nm)
55(@ 800 nm)
31(@ 900 nm)
Dark Current
per Element
nA
25
25
25
1
Spectral Noise
Current
pA/√Hz
0.5
0.5
0.5
0.1
Capacitance
@ 100 KHz
pF
1
1
1
0.5
Response Time
ns
3
3
3
2
NEP
fW /√Hz)
33(@ 1060 nm)
16(@ 900 nm)
9(@ 800 nm)
3(@ 900 nm)
NEP
V
275 - 425
275 - 425
275 - 425
250 - 425
Avalanche Photodiodes Si APD Arrays

Package Drawing – C30985E
Figure 2
15.24
(0.600)
15.24
(0.600)
Package Drawing – C30927 Series
Figure 1
Avalanche Photodiodes – Si APD Arrays

• Spectroscopy
• Particle detection
• Spot tracking and alignment systems
• Adaptive optics
• LIDAR (Light Detection And Ranging)

• High quantum efciency
• Hermetically sealed packages
• Monolithic chip with minimal dead space
between elements
• Specic tailored wavelength response
• RoHS compliant
19
www.excelitas.com

e C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes
made using a double-diused “reach-through” structure. e design of these photodiodes are such
that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable
properties.
ese APDs have quantum eciency of up to 40 % at 1060 nm. At the same time, the diodes retain
the low noise, low capacitance, and fast rise and fall times characteristics.
To help simplify many design needs, these APDs are also available in Excelitas’ high-performance
hybrid preamplier module type C30659 series, as well as the preamplier and TE cooler incorporated
module type LLAM series. Please refer to the respective sections in this catalog.
AVALANCHE
PHOTODIODES
FOR ANALYTICAL
APPLICATIONS
Avalanche Photodiodes
1060 nm NIR Enhanced Si APDs

Package Drawing – C30954EH, C30955EH
Figure 1
Package Drawing – C30956EH
Figure 2
Spectral Responsivity Characteristics
Graph 1
Wavelength (nm)
100
10
1
300 400 600 800 1000 1200 1400
–– C30954EH –– C30955EH –– C30956EH
1060 nm NIR Enhanced Si APDs

• Range nding
• LIDAR (Light Detection And Ranging)
• YAG laser detection

• High quantum efciency at 1060 nm
• Fast response time
• Wide operating temperature range
• Low capacitance
• Hermetically sealed packages
• RoHS compliant
Si APDs – NIR Enhanced
Product Table
Part Number
Unit mm
Photo
Sensitive
Diameter
0.8
1.5
3.0
C30954EH
C30955EH
C30956EH
A/W
Respon-
sivity
@ 1060 nm
36
34
25
nA
Dark
Current
50
100
100
pA/√Hz
Spectral
Noise
Current
0.5
0.5
0.5
pF
Capacitance
@ 100 KHz
2
3
10
ns
Response
Time
2
2
2
fW /√Hz)
NEP @
1060 nm
14
15
20
Vop
Range
275 - 425
275 - 425
275 - 425
V
20 www.excelitas.com
AVALANCHE PHOTODIODES
FOR HIGH ENERGY
RADIATION
DETECTIONS APPLICATIONS,
MOLECULAR
IMAGING
Large Area Si-APDs – UV-Enhanced APDs

Quantum Efficiency vs. Wavelength
Graph 1
Quantum Efficiency (%)
Wavelength (nm)
100
80
60
40
20
0
340 380 420 460 500 600 700 800 900 1000 1100
–– C30700-100 –– C30700-200 –– C30626
Quantum Efficiency vs. Wavelength
Graph 2
Quantum Efficiency (%)
Wavelength (nm)
90
70
60
50
40
30
350 400 450 500 550 600 650 700 750
–– C30739 series
Large Area Si-APDs – UV-Enhanced APDs

• Nuclear medicine
• Fluorescence detection
• High energy physics
• Medical imaging
• Radiation detection
• Particle physics
• Instrumentation
• Environmental monitoring

• High quantum efciency
• Low dark currents
• Easy coupling to scintillator crystals
• Immunity to electromagnetic elds
• Short wavelength enhanced responsivity
• Custom packaging available
• Excellent timing resolution
• RoHS compliant

e C30739ECERH Silicon Avalanche Photodiode (APD) is intended for use in a wide variety of
broadband low light level applications covering the spectral range from below 400 to over 700 nano-
meters. It has low noise, low capacitance and high gain. It is designed to have an enhanced short wave-
length sensitivity, with quantum eciency of 60 % at 430 nm.
e standard ceramic carrier package allows for easy handling and coupling to scintillating crystals
such as LSO and BGO. Combined with the superior short wavelength responsivity, it makes this APD
ideal in demanding applications such as Positron Emission Tomography (PET).
e C30626FH and C30703FH series are large area Si APDs in at pack packages for either direct
detection or easy coupling to scintillator crystals.
e C30626 uses a standard reach through structure and has peak detection at about 900 nm. e
C30703 is enhanced for blue wavelength response and has peak quantum eciency at ~ 530 nm.
ese APDs are packaged in square at pack with or without windows or on ceramics. e no-window
devices can detect direct radiation of X-rays and electrons at the energies listed, and the windowed
packages are best for easy scintillator coupling.
Large Area Si-APDs – UV-Enhanced APDs
Product Table
Part Number
Unit mm
Photo
Sensitive
Diameter
5 x 5
10 x 10
5.6 x 5.6
C30626FH
C30703FH
C30739ECERH
A/W
Responsivity
22
(@900 nm)
16
(@530 nm)
20
(@430 nm)
nA
Dark
Current
250
10
50
Spectral
Noise
Current
0.5
0.7
1.4
Capacitance
@ 100 KHz
30
120
60
ns
Response
Time
5
5
2
fW/√Hz)
NEP
23
(@900 nm)
40
(@530 nm)
-
V
Vop
Range
275 - 425
275 - 425
275 - 425
pA/ √Hz pF
21
www.excelitas.com

e Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm,
as well as extremely fast rise times at all wavelengths with a frequency response above 1 GHz. e
C30724 as a low gain APD can be operated at xed voltage without the need of a temperature
compensation.
Standard versions are available in two active area sizes: 0.23 and 0.5 mm diameter. ey are
oered in the traditional hermetic TO housing (“E”), in cost eective plastic through-hole T-1¾
(TO-like, “P”) packages, and in leadless ceramic carrier (LCC, “L”) package for surface mount
technology. All listed varieties are ideally suited for high-volume, low cost applications.
Customization of these APDs is oered to meet your design challenges. Operation voltage
selection and binning or specic wavelength ltering options are among many of the application
specic solutions available.
AVALANCHE
PHOTODIODES
FOR RANGE
FINDING
APPLICATIONS
C30737 Epitaxial Silicon APD – C30724 Low Gain APD
Product Table
Part Number
Unit
Package
C30737EH-230-80
C30737PH-230-80
C30737LH-230-80
C30737LH-230-81
C30737EH-500-80
C30737PH-500-80
C30737LH-500-80
C30737LH-500-81
C30737EH-230-90
C30737PH-230-90
C30737PH-230-90
C30737PH-230-92
C30737EH-500-90
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
C30724EH
C30724PH
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
Optical
Bandpass
Filter
nm
-
-
-
635
-
-
-
635
-
-
-
905
-
-
-
905
-
-
design
Active
Area
Diam.
µm
230
230
230
230
500
500
500
500
230
230
230
230
500
500
500
500
500
500
design
Peak
Sensitivity
Wavelength
nm
800
800
800
635
800
800
800
800
900
900
900
905
900
900
900
905
920
920
λpeak
typ
Breakdown
Voltage
V
120
120
120
120
120
120
120
120
180
180
180
180
180
180
180
180
-
-
VBR
min
V
200
200
200
200
200
200
200
200
260
260
260
260
260
260
260
260
350
350
VBR
max
Total Dark
Current (Bulk
+ Surface)
nA
2.5
2.5
2.5
2.5
5
5
5
5
2.5
2.5
2.5
2.5
5
5
5
5
20
20
10
10
10
10
20
20
20
20
10
10
10
10
20
20
20
20
40
40
ID
typ
nA
ID
max
Noise Current,
(f=10kHz,
Δf=1 Hz)
pA / √Hz
0.1
0.1
0.1
0.1
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.2
0.4
0.4
0.4
0.4
0.1
0.1
Capacitance
pF
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
0.6
0.6
0.6
0.6
1.0
1.0
1.0
1.0
1.0
1.0
CD
typ
Rise & Fall Time,
(RL=50Ω, 10 % -
90 % -10 % Points)
ns
0.22
0.22
0.22
0.22
0.30
0.30
0.30
0.30
0.50
0.50
0.50
0.50
0.60
0.60
0.60
0.60
5
5
typ
Temp. Coeff.
Of VOP , for
Constant M
V / ˚C
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
-
-
typ
Gain@
λpeak
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
15
15
M
typ
Responsivity
@ λpeak
50
50
50
35
50
50
50
35
60
60
60
60
60
60
60
60
8.5
8.5
M
typ
Electrical Characteristics at TAmbient = 22 °C; at operating voltage, Vop
Right: TO-C30737PH Series
T-1¾ (TO-like) rough-Hole
Package (4.9 mm Diameter)
Le: C30737LH Series
Leadless Ceramic Carrier
Package (3 x 3 mm2)

C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD

• Laser range nding for 600 to 950 nm range
• Optical communication
• Analytical Instrumentation

• Optimized versions for 900 and 800 nm
peak sensitivity
• Standard versions with 500 and 230 µm
active diameter
• Various package types: hermetic TO,
plastic TO, SMD
• High gain at low bias voltage
• Low breakdown voltage
• Fast response, tR ~ 300 ps
• Low noise, in ~ 0.2 pA /√Hz
• RoHS compliant
22 www.excelitas.com

Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety
of applications. e PIN structure allows high quantum eciency and fast response for detection of
photon in the 400 nm to 1100 nm range.
e YAG series oers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed
with a guard ring to collect current generated outside of the active area, they are the detectors of
choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise.
Precise beam positioning can be achieved by using our quadrant detectors. ey are designed with
4 pie-shaped quadrant sections from doping process thus reducing to almost zero the “dead” space
between each quadrant. Each quadrant is connected to an isolated lead.
e C30741 provide fast response and good quantum eciency in the spectral range between
300 nm to 1100 nm. Designed for high-speed, high-volume production and cost sensitive applica-
tions, these photodiodes are oered in plastic package, either TO style or SMD packages with a
visible blocking lter option.
Our UV series are high quality Si PIN photodiode in hermetically sealed TO package designed for the
220 nm to 1100 nm wavelength region with enhanced operation in the UV range. Low noise detection
is achieved by operating the UV series in photovoltaic mode (0 V bias).
e InGaAs PIN detectors provide high quantum eciency from 800 nm to 1700 nm. ey feature
low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and unifor-
mity within 2 % across the detector active area.
PIN PHOTO
DIODES
FOR INDUSTRIAL
APPLICATIONS
Unit µm
50
100
100
100
100
100
350
350
350
75
Active
Diameter
C30616ECERH
C30617BH
C30617BFCH
C30617BSCH
C30617BSTH
C30617ECERH
C30618BFCH
C30618GH
C30618ECERH
C30637ECERH
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Responsivity
Peak
pF
0.35
0.8
0.8
0.8
0.8
0.6
4
4
4
0.4
Capacitance
GHz
3.5
3.5
3.5
3.5
3.5
3.5
0.75
0.75
0.75
3.5
BW
nA
<1
<1
<1
<1
<1
<1
1
1
1
<1
Dark Current
V
100
100
100
100
100
100
100
100
100
100
Breakdown
Voltage
V
5
5
5
5
5
5
5
5
5
5
Operating
Voltage
Ceramic carrier
TO-18, ball lens
TO-18, FC receptacle
TO-18, SC receptacle
TO-18 ST receptacle
Ceramic carrier
TO-18, FC receptacle
T0-18
Ceramic carrier
Ceramic carrier
Package
InGaAs PIN, High Speed, Peak Wavelength at 1550 nm
Product Table

PIN Photodiodes
InGaAs and Si PIN Diodes,
Quadrant Detectors,
UV-Enhanced
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
-

• Telecom
• Instrumentation
• Photometry
• Laser power monitoring
• Fiber optic test equipment
• High speed switching
• Spot tracking
• Laser range nders
• Missile guidance
• Laser warning system

• High speed
• High responsivity
• Hermetically sealed
• Large area available
• High shunt resistance, low dark current
23
www.excelitas.com
um
1.5 x 1.5
1.5 x 1.5
1
2.5
5
8
11
0.5
2.5
5.0
2.5
1.0
2.5
0.0
5.5
5
5
2.5
5.0
16.0
Active
Diameter
mm2
2.25
2.25
0.8
5
20
50
100
0.2
5.1
20
5.1
0.81
5.1
23.4
18.5
18.5
5.1
20
200
0.65
0.65
0.56 x 0.56
6.71
0.31
Active Area
A/W
0.47
0.47
0.6
0.6
0.6
0.6
0.6
0.5
0.6
0.6
0.64
0.62
0.62
0.62
0.62
0.62
0.7
0.7
0.7
0.6
0.5
Responsiv-
ity Peak
nm
800
800
900
900
900
900
900
830
850
850
920
900
900
900
900
900
1000
1000
1000
900
900
880
880
Peak
Wavelength
pF
11
11
2.5
6
17
35
70
1.6
8.5
30
8.5
25
150
700
630
630
2.5
6
35
10
10
4
4
25
2.5
Capacitance
ns
2
2
5
8
10
15
20
0.5
3.5
5
<1n
-
-
-
-
-
-
5
5
5
10
10
150
150
200
3000
Rise/Fall
Time
nA
0.05
0.05
10
30
50
70
300
10
5
10
10
-
-
-
-
-
-
<20
<100
<200
10
10
10
10
5
0.5
Dark
Current
M
-
-
-
-
-
-
-
-
-
-
>500
>100
>50
>75
>75
-
-
-
Shunt
Resistance
V
300
300
>100
>100
>100
>100
>100
>200
>125
>125
150
-
-
-
-
-
-
>200
>200
>200
170
170
170
170
170
50
Breakdown
Voltage
V
10
10
45
45
45
45
45
100
15
15
100
0
0
0
0
0
0
180
180
180
Operating
Voltage
Plastic T-1¾ through-hole
T-1¾ visible blocking
TO-18
TO-5
TO-8
TO-8
TO-36
TO-18
TO-5
3 pin, 0.6 inch dia.
TO-5
TO-5, response down to 200 nm
TO-5, response down to 200 nm
TO-5, response down to 250 nm
TO-5, response down to 200 nm
TO-5, response down to 250 nm
TO-5, response down to 200 nm
TO-5
TO-8
TO-36
SMT
SMT
SMT
SMT
SMT
Package
Unit
C30741PH-15S
C30741PFH-15S
C30807EH
C30808EH
C30822EH
C30809EH
C30810EH
C30971EH
FFD-100H
FFD-200H
FND-100QH
UV-040BQH
UV-100BQH
UV-215BGH/340
UV-215BQH
UV-245BGH
UV-245BQH
YAG-100AH
YAG-200H
YAG-444AH
SR10BP
SR10BP-B
SR10DE
SR10DE-B
PFD10
CR50DE
Silicon PIN
Product Table
Unit mm
1
1
1
2
3
5
0.5
Active
Diameter
C30641EH-TC
C30641EH-DTC
C30641GH
C30642GH
C30665GH
C30723GH
C30619GH
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Responsivity
Peak
pF
40
40
40
150
200
950
8
Capacitance
Mega Ohm
50
50
50
25
10
5
250
Shunt
Resistance
MHz
75
75
75
20
3
3
350
BW
nA
5
5
5
10
25
-
1
Dark Current
V
80
80
80
50
50
50
80
Breakdown
Voltage
V
0-5
0-5
0-5
0-5
0-5
0-5
0-10
Operating
Voltage
TO-8, ange, TE-cooled
TO-8, ange, dual TE
TO-18
TO-5
TO-5
TO-5
TO-18
Package
InGaAs PIN, Large Area, Peak Wavelength at 1550 nm
Product Table
Unit
C30845EH
YAG-444-4AH
DTC-140H
Quadrant PIN
Quadrant PIN
Dual wavelength
detector Si-Si
(Top/Bottom)
Description
mm
8
11.3
3.5
Active
Diameter
50
100
9.9
mm2
Active Area
8/q
9/q
300/300
pF
Capacitance
6
8
-
ns
Rise/Fall Time
70 nA
<75 nA
50 / 50 MΩ
nA
Dark Current
100
200
-
V
Breakdown
Voltage min
0.6
0.6
0.6/0
A/W
Responsivity
900 nm
0.17
0.5
0.25 / 0.15
A/W
Responsivity
1060 nm
0.26/q
0.2/q
0.033 /
0.133
pA/sqrt(Hz)
Noise
Current
TO-8
Custom
Custom
Package
Specialty Silicon Detectors
Product Table
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
24 www.excelitas.com

An electro-optical smoke detector consists of an Infrared LED (IRED) and Photodiode (PD) as-
sembly, which exhibits a signal under the presence of smoke in the detection volume (smoke cham-
ber). Signal range under smoke and clean-air conditions and their long term stability are key features
of a smoke detector module. Excelitas oers IRED and PD components as well as customized as-
semblies with specied signal level range. Such an assembly can be an optical block containing an
IRED and PD for (SMD) board soldering or the complete smoke chamber, which are produced in
high-volumes. Please contact Excelitas to discuss your requirements.
Selected Photodiodes Used in Smoke Detection Applications
Product Table
Symbol
Unit mm
Package Active Area
Short Circuit
Current Dark Current
Junction
Capacitance
Radiometric
Sensitivity @ λPSpectral Range
Peak
Wavelength
Noise Equivalent
Power
Lensed sidelooker IRT
Lensed sidelooker
Flat sidelooker IRT
Lensed ceramic
5.27
7.45
7.45
11
VTP7840H
VTP413H
VTP100H
VTP1188SH
min
ISC
µA
50
120 (typ)
35
200 (typ)
max
IO
nA
20
30
30
30
typ
CJ
nF
40
50
50
300
typ
SR
A/W
0.55
0.55
0.5
0.55
λRANGE
nm
725-1150
400-1150
725-1150
400-1100
λP
nm
925
925
925
925
typ
NEP
W/√Hz
5.3 x 10-14
2.3 x 10-14
2.5 x 10-14
-
Selected Infrared LEDs (IREDs) Used in Smoke Detection Applications
Product Table
Unit
typ
PO
Package Total Power Test Current
Forward Drop
Voltage
Half Power Beam
Angle
T-1¾ lensed
T-1¾ lensed
T-1¾ lensed
20
25
20
VTE1291-1H
VTE1291-2H
VTE1295
typ
IFT
mA (pulsed)
100
100
100
@ IFT
VF
V
1.5
1.5
1.5
typ
Θ1/2
degree
±12
±12
±8
OPTOELECTRONIC
COMPONENTS
FOR SMOKE
DETECTOR
APPLICATIONS

Photodiodes and IREDs
Selected Photodiodes and Infrared Emitting Diodes (IREDs)

• Electro-optical smoke detection

• High quality components: photodiodes,
IREDs (UL- listed)
• Binning for optimized transfer function
• Customized optical block (PD+IRED)
assemblies
• Smoke chamber assemblies according
specied transfer function
Symbol
25
www.excelitas.com

Ambient light sensors from Excelitas provide an easy solution for applications that require a
response similar to the human eye, making it ideal when the response should only be inuenced by
visible light. ese devices contribute in various applications to energy conservation in both xed
and portable devices. ere are three main devices types, one being ltered photodiodes, the second
ltered phototransistors and nally wavelength selective devices based on III-V material. ey are
available in a number of standard packages, including surface mount for automated assembly.
Spectrally Adapted Photodiodes and Phototransistors
Product Table
Electrical characteristics at TAmbient = 25 ° C
Symbol
Unit
SR
typ
mm2
Package
Active
Area
T-1¾ at
T-1¾ at
T-1¾ at
SMT
SMT
1.219
1.548
0.192
0.70
0.73
VTP1220FBH
VTP9812FH
VTT9812FH
SR10SPD 470-0.9
SR10SPD 525-0.9
µA
ISC
min
Short Circuit
Current
@ H = 100fc,
2850 K
0.7
0.7
100
-
-
ID
typ
Dark
Current
-
-
-
-
-
nA
ID
max
10
10
100
0.03
0.03
CJ
typ
Junction
Capacitance
-
-
-
150
100
pF
CJ
max
18
18
-
-
-
Radio-
metric
Sensitivity
@ λP
0.27
0.034
7
0.18
0.25
nm
λRANGE
Spectral
Range
400-700
400-700
450-700
380-556
480-560
nm
λP
Peak
Wave-
length
550
580
585
470
525
AMBIENT
LIGHT SENSORS

Le: Spectrally Adapted Photodiodes
and Phototransistors
Right: C30737PH Series
T-1¾ (TO-like) rough-Hole
Package (4.9 mm Diameter)
VTT9812FH Output Versus Low Light Levels
Graph 2
Light Current (µA)
Light Level (fc)
20
18
16
14
12
10
8
6
4
2
0
024 6 8 10 12
Spectrally Adapted Photodiodes and Phototransistors
Responsivity @ 25° C VTT9812FH IR-BLOC™
Graph 1
RE (A/W/cm2)
Wavelength (nm)
7.00E-01
6.00E-01
5.00E-01
4.00E-01
3.00E-01
2.00E-01
1.00E-01
0.00E-01
300 11001000900800700600500400

• Interior and exterior light switching
(dusk/dawn switch)
• Interior and exterior light control (dimming)
• Automotive headlight dimmer
• Display contrast control
• Energy conservation
• Oil burner ame monitoring

• Response approaching human eye using
Excelitas’ IR-BLOC™ technology
• Perfect light sensor in conjunction with
Excelitas pyroelectric detectors for motion
controlled light switches
• RoHS compliant
• Selectable wavelength detection range
• Small footprint
• Surface mount packages
nA pF A/W
26 www.excelitas.com
FAST RESPONSE
SILICON
PHOTODIODES
FOR INDUSTRIAL AND
COMMERCIAL APPLICATIONS

Photodiodes in this series have been designed for low junction capacitance. e lower the capacitance,
the faster the response of the photodiode when the RC time constant is your limiting factor. Also,
speed can be further increased by reverse biasing the photodiodes. ese devices have excellent
response in the IR region and are well matched to IR LEDs (VTE series). Some photodiodes are
available in packages which incorporate a visible rejection lter, eectively blocking light below 700 nm.
Photodiodes made with the VTP process are suitable for operation under reverse bias conditions but
may be used in the photovoltaic mode. Typical reverse breakdown voltages are around 140 V. Low
dark currents under reverse bias are also a feature of this series.
Silicon Photodiodes – VTP Series
Product Table
Electrical characteristics at TAmbient = 25 °C
Symbol
mm2
Package Active Area
Short Circuit
Current Dark Current
Junction
Capacitance
Radiometric
Sensitivity @ λPSpectral Range
Peak
Wavelength Active Area
Flat sidelooker IRT
Flat sidelooker
TO-46
TO-46 lensed
Lensed ceramic
T-1¾ at
T-1¾
T-1¾ at
T-1¾ IRT
T-1¾ at IRT
T1
T1 IRT
7.45
7.45
1.6
1.6
11
1.219
2.326
2.326
2.326
2.326
0.684
0.684
VTP100H
VTP100CH
VTP1012H
VTP1112H
VTP1188SH
VTP1220FBH
VTP1232H
VTP1232FH
VTP1332H
VTP1332FH
VTP3310LAH
VTP3410LAH
min
ISC
µA
35
50
10
30
200 (typ)
0.7
100
21
75
17
24
15
max
ID
nA
30
30
7
7
30
10
25
25
25
25
35
35
max
CJ
pF
50
50
6
6
300
18
180
180
180
180
25
25
typ
SR
A/W
0.5
0.55
0.55
0.55
0.55
0.27
0.6
0.6
0.55
0.55
0.55
0.55
λRANGE
725 -1150
400 -1150
400 -1150
400 -1150
400 -1100
400 - 725
400 -1100
400 -1100
725 -1150
725 -1150
400 -1150
700 -1150
λP
nm
925
925
925
925
925
550
920
920
920
920
925
925
typ
NEP
W /√Hz
2.5 x 10-14
9.0 x 10-14
8.7 x 10-14
8.7 x 10-14
-
-
-
-
-
-
1.9 x 10-13
1.9 x 10-13

Silicon Photodiodes – VTP Series
Silicon Photodiodes – VTP Series

• Smoke detection
• Barcode scanning
• Light meters
• Pulse oximeters

• Visible to IR spectral range
• Integral visible rejection lters available
• 1 to 2 % linearity over 7 to 9 decades
• Low dark currents
• High shunt resistance
• Low capacitance
nm
27
www.excelitas.com
* Typical characteristic curves @ 25° C (unless otherwise noted)
Silicon Photodiodes – VTP Series
Product Table
Electrical characteristics at TAmbient = 25 °C
Symbol
Unit mm2
Package
Short Circuit
Current Dark Current
Junction
Capacitance
Radiometric
Sensitivity @ λPSpectral Range
Peak
Wavelength
Lensed sidelooker
Ceramic
Ceramic
TO-5
TO-8
Lateral
Lateral IRT
Lensed sidelooker IRT
Ceramic
8 mm ceramic
Mini-DIP
Mini-DIP IRT
SMT clear plastic
SMT IRT
6 mm ceramic
T-1¾ at
SMT
7.45
21
21
7.45
20.6
0.684
0.684
5.27
7.45
5.16
7.45
7.45
5.269
5.269
1.6
1.548
0.73
VTP413H
VTP4085H
VTP4085SH
VTP5050H
VTP6060H
VTP7110H
VTP7210H
VTP7840H
VTP8350H
VTP8440H
VTP8551H
VTP8651H
VTP8740_TRH
VTP8840_TRH
VTP9412H
VTP9812FH
SR10SPD 880-0.9
min
ISC
µA
120 (typ)
200 (typ)
200 (typ)
40
120
6
5
50
65
30
50
35
75
50
10
0.7
-
max
ID
nA
30
100
50
18
35
35
35
20
30
15
30
30
20
20
7
10
0.01
CJ
50
500
500
24
60
25
25
40
50
15
50
50
50
50
6
18
-
typ
SR
A/W
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.5
0.6
0.6
0.55
0.034
-
λRANGE
nm
400 -1150
400 -1100
400 -1100
400 -1150
400 -1150
400 -1150
700 -1150
725 -1150
400 -1150
400 -1150
400 -1150
725 -1150
400 -1150
725 -1150
400 -1150
400 - 700
820-935
λP
nm
925
925
925
925
925
925
925
925
925
925
925
925
925
925
925
580
890
Active Area
typ
NEP
W /√Hz
2.3 x 10-14
-
-
1.4 x 10-13
1.9 x 10-13
1.9 x 10-13
1.9 x 10-13
5.3 x 10-14
1.8 x 10-13
1.3 x 10-13
1.8 x 10-13
2.0 x 10-13
2.0 x 10-13
2.0 x 10-13
8.7 x 10-14
-
-
Absolute Spectral Response*
Graph 1
Radiometric Sensitivity, A/ W
Wavelength (mm)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200 400 600 800 1000 1200
–– Q.E. = 0.50 –– glass window or epoxy coated
–– Q.E. = 0.75 –– visible blocking filter
Rel. Junction Capacitance vs. Voltage*
Graph 4
Relative Capacitance
Bias Voltage (Volts)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 20-2-4-6-8-10-12-14-16
Temp. Coefficient of Light Current vs. Wavelength*
Graph 5
Temperature Coefficient (%) / Degree (C)
Wavelength (mm)
0.5
0.4
0.3
0.2
0.1
0
-0.1
-0.2
400 12001000800600
–– small area –– large area
Rel. Short Circuit Current vs. Illumination*
Graph 6
Relative Short Circuit Current
Illumination (fc @ 2850 K)
10000
1000
100
10
1
0.1
0.01
0.01 1000010001001010.1
Silicon Photodiodes – VTP Series
Relative Dark Current vs. Temperature*
Graph 3
Relative Dark Current
Temperature (Degrees C)
1000
100
10
1
0.1
0100
75
50
25
0.10.1 1
Rise/Fall Times – Non Saturated*
Graph 2
Response Time (µsec 10 – 90 %)
RLCJ Product (µsec)
10
1
0.1
0.01
0 1 10
–– photovoltaic –– V = 10 V –– R.C. limit
Active Area
max
pF
λ
28 www.excelitas.com
INDUSTRY STANDARD
SILICON
PHOTODIODES

e VTD series are photodiodes which have been used in many applications as replacement for
competitive devices.
Silicon Photodiodes – VTD Series
Product Table
Symbol
Unit
Industry
Equivalent
CLD31AA
BPW34
BPW34F
BPW34
BPW34F
SFH205
SFH205K
SFH206
SFH206K
S1723-04
VTD31AAH
VTD34H
VTD34FH
VTD34SMH
VTD34FSMH
VTD205H
VTD205KH
VTD206H
VTD206KH
VTH2090H
Package
Ceramic
Mini-DIP
Mini-DIP
SMT
SMT
TO-92
TO-92
TO-92
TO-92
Black ceramic
mm2
Active
Area
16.73
7.45
7.45
7.45
7.45
7.41
7.41
7.41
7.41
84.64
min
ISC
µA
Short Circuit Current
150 @ 5 mW/cm2, 2850 K
50 @ 1000 Lux, 2850 K
15 @ 0.5 mW/cm2, 940 nm
50 @ 1000 Lux, 2850 K
15 @ 0.5 mW/cm2, 940 nm
15 @ 0.5 mW/cm2, 940 nm
50 @ 1000Lux, 2850 K
15 @ 0.5 mW/cm2, 940 nm
50 @ 1000Lux, 2850 K
65 @ 100 Lux
max
ID
nA
Dark
Current
50
30
30
30
30
30
30
30
30
10
typ
CJ
nF
Junction
Capacitance
0.50
0.060
0.060
0.025
0.080
0.072
0.072
0.072
0.072
0.070
typ
SR
A/W
Radiometric
Sensitivity
@ λP
0.55
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
λRANGE
nm
Spectral
Range
400-1150
400-1100
725-1150
400-1100
725-1150
800-1100
400-1100
750-1100
400-1100
400-1100
λP
nm
Peak
Wavelength
860
900
940
900
940
925
925
925
925
960
typ
NEP
W /√Hz
Noise
Equivalent
Power
-
4.8 x 10-14
4.8 x 10-14
4.8 x 10-14
4.8 x 10-14
-
-
-
-
-

Silicon Photodiodes – VTD Series
Silicon Photodiodes – VTD Series

• Pulse oximetry
• Automotive
• Surface mount assembly process

• Alternate source for industry standard
photodiodes
• Surface mount package available
• Available in package with integrated
IR ltering
• Large area PIN available on ceramic
package
• RoHs compliant
Figure 1
Figure 3
Figure 2
29
www.excelitas.com
CATHODE
.039
(1.00)
NOM.
ACTIVE
AREA
.182 (4.62)
.172 (4.37)
.098 NOM.
(2.49)
OPTICAL C
L
.200 (5.08)
NOMINAL
.130 NOM.
(3.30)
.023 NOM.
(0.58)
.042 (1.07)
.032 (0.81)
.080 (2.03)
.070 (1.78)
.024 x .010 NOM.
(0.61 x 0.25)
.162 (4.11)
.152 (3.86)
CATHODE
.039
(1.00)
NOM.
ACTIVE
AREA
.182 (4.62)
.172 (4.37)
.098 NOM.
(2.49)
OPTICAL C
L
.200 (5.08)
NOMINAL
.130 NOM.
(3.30)
.023 NOM.
(0.58)
.042 (1.07)
.032 (0.81)
.080 (2.03)
.070 (1.78)
.024 x .010 NOM.
(0.61 x 0.25)
.162 (4.11)
.152 (3.86)
CATHODE
.039
(1.00)
NOM.
ACTIVE
AREA
.182 (4.62)
.172 (4.37)
.098 NOM.
(2.49)
OPTICAL C
L
.042 (1.07)
.032 (0.81)
.080 (2.03)
.070 (1.78)
.162 (4.11)
.152 (3.86)
.300 (7.62)
NOMINAL
.40 (10.2)
NOMINAL
.024 x .010 NOM.
(0.61 x 0.25)
6ϒ
NOM. .000 (0.00)
.008 (0.20)
.75 (19.0)
MINIMUM
.026 (0.66)
.020 (0.51)
ANODE
CATHODE
.275 (6.99)
.245 ( 6.22)
.098
(2.49)
NOM.
.100 NOM.
(2.54)
.100 NOM.
(2.54)
SENSITIVE
AREA
.023 (0.58) SQ
.017 (0.43)
EPOXY CONTOUR NOT CONTROLLED
ON THIS SURFACE
CATHODE
MARK
.165 (4.19)
.155 (3.94)
.102 (2.59) R
.097 (2.46)
Silicon Photodiodes – VTD Series
Package Drawing – VTD Series – SMT Package
Package Drawing – VTD Series – TO-92 Package
Package Drawing – VTD Series – Mini-DIP Package
30 www.excelitas.com

is series of P on N silicon planar photodiodes have been designed for optimum response through
the visible part of the spectrum. Units with UV transmiing windows also exhibit excellent response
in the UV. “B” series units have a built-in infrared rejection lter for applications requiring a response
approximating the human eye. Photodiodes made with the VTB process are primarily intended to be
used in photovoltaic mode but may be used with a small reverse bias. All photodiodes in this series
exhibit very high shunt resistance. is characteristic leads to very low osets when used in high gain
transimpedance op-amps circuits.
BLUE-ENHANCED
SILICON
PHOTODIODES
FOR INDUSTRIAL AND
COMMERCIAL APPLICATIONS
VTB1012
Small area planar
silicon photodiode
in at window
TO-46 package
VTB6061
Large area planar
silicon photodiode
in a at window
TO-8 package

Silicon Photodiodes – VTB Series
Ultra High Dark Resistance
VTB4051
Planar silicon photo-
diode mounted on
a ceramic substrate
and coated with a
layer of clear epoxy
VTB8341
Planar silicon photo-
diode mounted on
a ceramic substrate
and coated with a
layer of clear epoxy
Silicon Photodiodes – VTB Series – Ultra High Dark Resistance

• Ambient light sensing
• UV and blue light sensing
• Flame monitoring
• Light meters
• Photometry

• UV to IR spectral range
• Integral IR rejection lters available
• Response @ 365 nm, 0.14 A/W typical
• Response @ 220 nm, 0.06 A/W typical
with UV window
• 1 to 2 % linearity over 7 to 9 decades
• Very low dark current
• High shunt resistance
• RoHs compliant
31
www.excelitas.com
Figure 1
Package Drawing – VTB Series – Flat Sidelooker Package
Silicon Photodiodes – VTB Series – Ultra High Dark Resistance
Silicon Photodiodes – VTB Series – Ultra High Dark Resistance
Product Table
Symbol
Unit
VTB100AH
VTB1012H
VTB1012BH
VTB1013H
VTB1013BH
VTB1112H
VTB1112BH
VTB1113H
VTB1113BH
VTB4051H
VTB5051H
VTB5051BH
VTB5051JH
VTB5051UVH
VTB5051UVJH
VTB6061H
VTB6061BH
VTB6060CIEH
VTB6061JH
VTB6061UVH
VTB6061UVJH
VTB8341H
VTB8440H
VTB8440BH
VTB8441H
VTB8441BH
VTB9412H
VTB9412BH
VTB9413H
VTB9413BH
Package
Flat sidelooker
TO-46
TO-46
TO-46
TO-46
TO-46 lensed
TO-46 lensed
TO-46 lensed
TO-46 lensed
Ceramic
TO-5
TO-5
TO-5 with 3 pins
TO-5
TO-5 with 3 pins
TO-5
TO-5
TO-5
TO-5 with 3 pins
TO-5
TO-5 with 3 pins
Ceramic
8 mm ceramic
8 mm ceramic
8 mm ceramic
8 mm ceramic
6 mm ceramic
6 mm ceramic
6 mm ceramic
6 mm ceramic
mm2
Active
Area
7.1
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
14.8
14.8
14.8
14.8
14.8
14.8
37.7
37.7
37.7
37.7
37.7
37.7
5.16
5.16
5.16
5.16
5.16
1.6
1.6
1.6
1.6
min
ISC
µA
Short Circuit Current
@ 100 fc, 2850 K
50
8.0
0.80
8.0
0.80
30.0
3.0
30.0
3.0
100
85
8
85
85
85
260
26
260
260
260
35
35
4
35
4
8
0.8
8
0.8
max
I
D
nA
Dark
Current
0.50
0.10
0.10
0.02
0.02
0.10
0.10
0.02
0.02
0.25
0.25
0.25
0.25
0.25
0.25
2.0
2.0
2.0
2.0
2.0
2.0
0.10
2.0
2.0
0.10
0.10
0.10
0.10
0.02
0.02
CJ
nF
Junction
Capacitance
0.10
0.31
0.31
0.31
0.31
0.31
0.31
0.31
0.31
3.0
3.0
3.0
3.0
3.0
3.0
8.0
8.0
8.0
8.0
8.0
8.0
1.0
1.0
1.0
1.0
1.0
0.31
0.31
0.31
0.31
typ
SR
A/W
Radiometric
Sensitivity
@ 365 nm
0.55 @ 925 nm
0.09
0.28 @ 540 nm
0.09
0.28 @ 540 nm
0.19
0.28 @ 540 nm
0.19
0.28 @ 540 nm
0.10
0.10
0.28 @ 540 nm
0.10
0.038 @ 220 nm
0.038 @ 220 nm
0.10
0.28 @ 540 nm
0.10
0.04 @ 220 nm
0.04 @ 220 nm
0.10
0.10
0.28 @ 540 nm
0.10
0.28 @ 540 nm
0.09
0.28 @ 540 nm
0.09
0.28 @ 540 nm
λRANGE
nm
Spectral
Range
400 -1150
320 -1100
330 - 720
320 -1100
330 - 720
320 -1100
330 - 720
320 -1100
330 - 720
320 -1100
320 -1100
330 - 720
320 -1100
200 -1100
200 -1100
320 -1100
330 - 720
460 - 675
320 -1100
200 -1100
200 -1100
320 -1100
320 -1100
330 - 720
320 -1100
330 - 720
320 -1100
330 - 720
320 -1100
330 - 720
λP
nm
Peak
Wavelength
925
920
580
920
580
920
580
920
580
920
920
580
920
920
920
920
580
555
920
920
920
920
920
580
920
580
920
580
920
580
typ
NEP
W / √Hz
Noise Equivalent
Power
9.0 x 10-14
3.0 x 10-14
5.3 x 10-14
5.9 x 10-15
1.1 x 10-14
3.0 x 10-14
5.3 x 10-14
5.9 x 10-15
1.1 x 10-14
2.1 x 10-14
2.1 x 10-14
3.7 x 10-14
2.1 x 10-14
2.1 x 10-14
2.1 x 10-14
5.7 x 10-14
1.0 x 10-13
1.0 x 10-13
5.7 x 10-14
5.7 x 10-14
5.7 x 10-14
2.4 x 10-14
5.9 x 10-14
1.1 x 10-13
1.3 x 10-14
2.4 x 10-14
3.0 x 10-14
5.3 x 10-14
5.9 x 10-15
1.1 x 10-14
typ
32 www.excelitas.com
Figure 2
Package Drawing – VTB Series – TO-46 Package
Figure 4
Package Drawing – VTB Series – 8mm Ceramic Package
Figure 5
Package Drawing – VTB Series – TO-46 Lensed
Figure 6
Package Drawing – VTB Series – Ceramic Package
Figure 7
Package Drawing – VTB Series – TO-8 Package
Figure 3
Package Drawing – VTB Series – TO-5 Package
Silicon Photodiodes – VTB Series – Ultra High Dark Resistance
33
www.excelitas.com Silicon Photodiodes – VTB Series – Ultra High Dark Resistance
Absolute Spectral Response
Graph 1
Radiometric Sensitivity (A / W)
Wavelength (nm)
0.6
0.5
0.4
0.3
0.2
0.1
0
200 12001000800600400
–– With UVT Lens –– Glass Window or Epoxy Coated –– Q.E. = 0.50 –– Q.E. = 0.75
Absolute Spectral Response “B“ Series (Filtered)
Graph 2
Radiometric Sensitivity (A / W)
Wavelength (nm)
0.6
0.5
0.4
0.3
0.2
0.1
0
200 12001000800600400
Graph 4
Relative Junction Capacitance vs. Voltage (Refered to Zero Bias)
Relative Capacitance
Bias Voltage(V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-12 2
0-2-4-6-8-10
Relative Short Circuit Current vs. Illumination
Graph 5
Relative Short Circuit Current
Illumination, fc (2850 K)
10000
1000
100
10
1
0.1
0.001
0.001 1000010001001010.01
–– Small Area –– Large Area
Rise/Fall Times – Non Standard
Graph 6
Response Time (µsec 10 – 90 %)
RLCJ Product (µsec)
1000
100
10
1
0.1 100
–– Small Area Cells < 5.0 mm2 –– Large Area Cells > 100 mm2
1 10
λ
Rel. Current or Resistance vs. Temperature (Refered to 25° C)
Graph 3
Relative Dark Current or Resistance
Temperature (Degree)
100
10
1
0.1
0.01
-50 1007550250-25
–– ID –– RD
34 www.excelitas.com

Phototransistors are photodiode-amplier combinations integrated within a single silicon chip.
e phototransistor can be viewed as a photodiode whose output current is fed into the base of a
conventional transistor.
ese photodiode-amplier combinations are put together to overcome the major limitation of
photodiodes: unity gain. e typical gain of a phototransistor can range from 100 to over 1500.
Many applications demand a greater output than can be generated by a photodiode alone. Even
though the signal of a photodiode can be amplied through external circuitry (operational
amplier for example) this is not always cost eective. In such cases, phototransistors provide a
lower cost alternative.
PHOTO
TRANSISTORS
FOR INDUSTRIAL AND
COMMERCIAL APPLICATIONS
-

Phototransistors
V Series – CR Series
Phototransistors – VTT Series – CR Series
Figure 1
Package Drawing – VTT Series – T-1¾ Package

• Coin counters
• Position sensors
• Remote controllers
• Ambient light sensing
• Street light switching
• Oil burner ame monitoring
• Safety shields
• Margin control-printers
• Monitor paper position and stack height

• Low cost visible and near IR photo detection
• Low dark current
• Available in package with integrated
visible ltering
• Available in package with integrated
IR ltering
• Available in a wide range of packages
• RoHs compliant
CR50TE
• Surface mounting device
• Solid state ceramic chip
• High thermal conductivity
• Special type (CR50TE-DLF)
with daylight lter on request
35
www.excelitas.com
Figure 3
Package Drawing – VTT Series – TO-46 Package
Figure 2
Package Drawing – VTT Series – T-1 Package
Phototransistors – VTT Series – CR Series
Product Table
Symbol
Unit
VTT1222WH
VTT1223WH
VTT1225H
VTT1226H
VTT1227H
VTT3122EH
VTT3123EH
VTT3323LAH
VTT3324LAH
VTT3325LAH
VTT3423LAH
VTT3424LAH
VTT3425LAH
VTT7122H
VTT7123H
VTT7125H
VTT7222H
VTT7223H
VTT7225H
VTT1212H
VTT1214H
VTT9002H
VTT9003H
VTT9102H
VTT9103H
VTT1015H
VTT1016H
VTT1017H
VTT1115H
VTT1116H
VTT1117H
VTT9812FH
CR50TE
Package
T-1 ¾
T-1 ¾
T-1 ¾
T-1 ¾
T-1 ¾
Coax hermetic
Coax hermetic
Long T-1
Long T-1
Long T-1
Long T-1
Long T-1
Long T-1
Lateral
Lateral
Lateral
Lateral
Lateral
Lateral
T-1 ¾
T-1 ¾
TO-106 at
TO-106 at
TO-106 lensed
TO-106 lensed
TO-46
TO-46
TO-46
TO-46 lensed
TO-46 lensed
TO-46 lensed
T-1 ¾ at
Ceramic
SMD (A2)
mm2
Exposed
Active
Area
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.63
0.63
0.63
0.63
0.63
0.63
0.19
0.18
min
IC
mA
Light Current
@ 100 fc,
VCE = 5 V
1.9
1.5
4.0
7.5
12.0
1.2
4.0
2.0 @ 20 fc
4.0 @ 20 fc
6.0 @ 20 fc
1.0 @ 20 fc
2.0 @ 20 fc
3.0 @ 20 fc
1.0
2.0
4.5
0.9
1.8
4.0
2.0 @ 20 fc
4.0 @ 20 fc
2.0
5.0
6.0
13.0
0.4
1.0
2.5
1.0 @ 20 fc
2.0 @ 20 fc
4.0 @ 20 fc
0.10
max
I
CED
nA
Dark Current
@ VCE = 10 V
10 @ VCE = 20 V
10 @ VCE = 20 V
100
100
100
100 @ VCE = 20 V
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100 @ VCE = 5 V
100 @ VCE = 5 V
25 @ VCE = 20 V
25 @VCE = 20 V
25
100
100
100
100
400 @ VCE = 20 V
min
VBR(CEO)
V
Collector
Breakdown @
IC = 100 µA,
0 fc
50
40
30
30
30
40
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
30
20
30
30
30
30
40
min
VBR(CEO)
V
Emitter
Breakdown @
IC = 100 µA,
0 fc
6.0
6.0
5.0
5.0
5.0
6.0
4.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
4.0
4.0
6.0
6.0
4.0
6.0
4.0
4.0
5.0
max
VCE(SAT)
Saturation
Voltage @
IC = 100 µA,
100 fc
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.55
0.55
0.55
0.55
0.40
0.40
0.40
0.40
0.40
0.40
0.25
0.3 @ IC= 2 mA
tR / tF
µS
Rise/Fall Time
IC = 1.0 mA
RL = 100
Angular
Response
λRANGE
nm
Spectral
Range
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
700 -1050
700 -1050
700 -1050
400 -1050
400 -1050
400 -1050
700 -1050
700 -1050
700 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
400 -1050
450 - 700
400 -1070
Typical
Θ1/2
⁰
±40
±40
±5
±5
±5
±8
±8
±10
±10
±10
±10
±10
±10
±36
±36
±36
±36
±36
±36
±10
±10
±50
±50
±42
±42
±35
±35
±35
±15
±15
±15
±56
Wide viewing
angle
2.0
3.0
1.5
3.0
4.0
2.5
4.0
3.0
4.0
5.0
3.0
4.0
5.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
6.0
4.0
6.0
6.0
10.0
5.0
5.0
8.0
5.0
8.0
8.0
1.5
4.0 @ RL = 50 Ω
Phototransistors – V Series – CR Series
V
Typical
36 www.excelitas.com
Rel. Spectral Response (Referred to Peak Response of Clear Case)
Graph 1
Relative Output (%)
Wavelength (nm)
100
80
60
40
20
0
400 11001000900800700600500
–– Clear Case –– Black Epoxy IR Transmitting Case
Relative Output vs. Illumination (Normalized at 100 fc)
Graph 2
Relative Output
Illumination, fc (2850K)
10
1
0.1
0.01
0.001
1 1000
10 100
Angular Response Coax Packages
Graph 3
Relative Output (%)
Angle of Optical Axis
100
80
60
40
20
0
-90 9060300-30-60
–– VTT312XE
Angular Response Molded Epoxy Packages
Graph 4
Relative Output (%)
Angle of Optical Axis
100
80
60
40
20
0
-90 9060300-30-60
–– VTT122XW, VTT712X, VTT722X –– VTT121X, VTT332XLA, VTT342XLA –– VTT122X
Angular Response Ceramic Packages
Graph 5
Angle of Optical Axis
100
80
60
40
20
0
-90 9060300-30-60
–– VTT900X –– VTT910X
Angular Response 10–46 Packages
Graph 6
Relative Output (%)
Angle of Optical Axis
100
80
60
40
20
0
-90 9060300-30-60
–– VTT101X –– VTT111X
Phototransistors – V Series – CR Series
37
www.excelitas.com
INFRARED
SWITCHES
Unit
IP
mA
0.3
0.3
6.0
If
Test Conditions
mA
20
20
20
VCE
V
5
5
30
d
mm
2.5
2.5
50.8
VTR16D1H
VTR17D1H
VTR24F1H
Id
µA
Dark Current (max)
0.1
0.1
-
If
Test Conditions
mA
0
0
-
VCE
V
5
5
-
Output Element Detector Device
Phototransistor
Phototransistor
Photodarlington
VTR Series Reflective Optoswitch
Product Table
Symbol
Unit
IP
mA
Light Current (min)
0.5
0.15
2
0.6
0.15
0.075
0.75
0.225
If
Test Conditions
mA
20
20
20
20
20
20
20
20
VCE
V
5
5
5
5
5
5
5
5
VTL11D1H
VTL11D1-20H
VTL11D3H
VTL11D3-20H
VTL11D5-20H
VTL11D6-20H
VTL11D7H
VTL11D7-20H
Id
nA
Light Current (min)
100
100
100
100
100
100
100
100
If
Test Conditions
mA
0
0
0
0
0
0
0
0
VCE
V
10
10
10
10
10
10
10
10
VSAT
V
Saturation Voltage (max)
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
If
Test Conditions
mA
20
20
20
20
20
20
20
20
VCE
V
0.25
0.25
1.8
1.8
0.25
0.25
0.25
0.25
None
0.50
None
0.50
0.50
0.50
None
0.50
Emitter Detector
Width Width
mm mm
None
None
None
None
0.25
0.12
0.50
0.50
Aperture Combination
VTL11D Series Transmissive Optoswitch
Symbol
Unit
IP
mA
0.2
0.2
0.5
0.5
2.5
1.0
If
Test Conditions
mA
20
20
20
20
20
10
VCE
V
10
10
10
10
10
10
VTL23D0A21H
VTL23D0A22H
VTL23D1A00H
VTL23D1A22H
VTL23D2A00H
VTL23D3A00H
Id
nA
Light Current (min)
100
100
100
100
100
100
If
Test Conditions
mA
0
0
0
0
0
0
VCE
V
10
10
10
10
10
10
VSAT
V
Saturation Voltage (max)
0.4
0.4
0.4
0.4
0.6
0.4
If
Test Conditions
mA
20
20
20
20
20
10
VCE
V
0.1
0.1
0.4
0.4
1.8
0.8
0.50
0.50
1.0
0.50
1.0
1.0
Emitter Detector
Width Width
mm mm
0.25
0.50
1.0
0.50
1.0
1.0
Aperture Combination
VTL23DxA Series Transmissive Optoswitch

Infrared Switches VTR – VTL
Infrared Switches – VTR – VTL Series

• Coin counters
• Paper-presence detection in copiers and printers
• Toner density control in copiers and printers
• Object sensing
• Distance detection
• Position sensing
• Rotational speed

• Fully integrated emitter and detector assembly
• Contains no mechanical parts to wear-out
• Provides non-contact object sensing
• Low power consumption
• Small size
• Low cost
• RoHs compliant

Excelitas’ optoswitches are ideal for non-contact sensing applications. ey consist of an emier and
a detector integrated in a plastic housing. e emier is an IR LED while the detector is either a pho-
totransistor or a photodarlington. ese optoswitches are available either in transmissive or reective
conguration.
Symbol
Light Current (min)
Light Current (min)
38 www.excelitas.com

Pulsed semiconductor lasers in the near IR are commonly used for long distance time-of-ight or
phase-shi range nder systems. Excelitas oers a broad range of suited pulsed 905 nm lasers designs
include multi cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W
of peak optical output power. Physical stacking of laser chips resulting in up to 300 W of peak optical
output power.
Chip on board assemblies are available for hybrid integration. A selection of 6 metal, hermetically
sealed package types are available for harsh environment applications. A molded epoxy resin TO-18
type package is available for high-volume applications.
Critical parameters are pulse-width and rise/fall times. e pulse width may be reduced allowing for
increased current drive and resulting in higher peak optical power. Quantum well laser design oers
rise and fall times of < 1 ns however the drive circuit lay out and package inductance play the greater
role and should be designed accordingly. Excelitas oers a variety of package types with dierent in-
ductive values to assist to this end.
Our core competencies include: MOVPE wafer growth; wafer processing of the grown GaAs wafers;
assembly using either epoxy or solder die aach; epoxy encapsulation of lasers mounted on lead frame;
hermetically sealed product qualication to MIL STD and custom requirements.
HIGH POWER
LASER DIODES
FOR RANGE
FINDING

Pulsed Laser Diodes
PGA – PGEW Series
Pulsed Laser Diodes – PGA – PGEW Series
Device
(X = pkg)
(H = RoHS
Compliance)
1
1
1
1
1
1
1
1
2
2
2
2
3
3
1
1
2
2
3
3
4
4
6
6
8
8
12
12
75
225
75
225
75
225
75
225
75
225
75
225
75
225
1
1
5
5
10
10
15
15
175
175
225
225
450
450
Description
Total # of
Emitting
Stripes
Width
µm
Height
µm
PGAx1S03H
PGAx1S09H
DPGAx1S03H
DPGAx1S09H
TPGAx1S03H
TPGAx1S09H
QPGAx1S03H
QPGAx1S09H
TPGAx2S03H
TPGAx2S09H
QPGAx2S03H
QPGAx2S09H
QPGAx3S03H
QPGAx3S09H
Emitting Area
PGA Pulsed Laser Family Selection Table, Typ. Wavelength 905 nm, 5 mm Spectral Width
Product Table
10
10
10
10
10
10
10
10
10
10
10
10
10
10
ΘII
Beam Spread
Parallel
to Junction
(FWHM)
25
25
25
25
25
25
25
25
25
25
25
25
25
25
Θ┴
Beam Spread
Perpendicular
to Junction
(FWHM)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
nm / ° C
Typical
Temperature
Coefficient
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
”S“
Metal Can
TO-18
✓
✓
✓
✓
✓
✓
✓
✓
”W“ Plastic
Encapsulated
TO-18
Preferred
Packages
30 W
50 W
75 W
100 W
150 W
200 W
300 W
225 µm (9 mils)
Stripe Width
Typical Peak
Power at
30 A, 100 ns
8 W
15 W
23 W
33 W
45 W
65 W
95 W
75 µm (3 mils)
Stripe Width
Typical Peak
Power at
10 A, 100 ns
# of
Chips

• Range nders
• Safety light curtains
• Adaptive cruise control
• Laser therapy

• Multi cavity lasers concentrate emitting
source size
• Quantum well structure
• High peak pulsed power into aperture
• Excellent power stability with temperature
39
www.excelitas.com
Peak Radiant Intensity vs. Temperature
Graph 1
Relative Radiant Intensity (%)
Temperature (Degrees)
110
100
90
80
70
60
50
40
30
20
10
0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Graph 2
Radiant Intensity vs. F Number
Relative Radiant Intensity (%)
F Number
100
10
1
0 1 10 100
Graph 3
Spectral Plot Distribution
Relative Radiant Intensity (%)
Wavelength (nm)
100
50
1
880 930905
Center Wavelength vs. Temperature
Graph 6
Center Wavelength (nm)
920
915
910
905
900
895
890
885
880
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Radiant Intensity vs. Pulse Width for Safe Operation
Graph 4
Relative Radiant Intensity (%)
Pulse Width at FWHM (ns)
1000
100
10
1 10 100 1000
Safe operating region
Figure 1
Package Drawing Package S (TO-18)
Pin out
1. LD Anode (+),
2. LD Cathode (-) Case,
Inductance 5.2 nH
Pulsed Laser Diodes – PGA – PGEW Series
QP6EW currently being veried.
Safe Operation Region (Plastic Encaps.)
Graph 5
Relative Radiant Intensity (%)
Pulse Width at FWHM (ns)
1000
100
10
0
10 100 1000
Safe operating region
Figure 6
Figure 3
Figure 2
Figure 5
Figure 4
40 www.excelitas.com
Pin out
1. (Pkg Flat)
LD Anode (+),
2. LD Cathode (-),
Inductance 5.0 nH
Pin out
1. LD Anode (+),
2. NC,
3. LD Cathode (-) Case,
Inductance 5.0 nH
Pin out
1. LD Anode (+),
2. LD Cathode (-) Case,
Inductance 12 nH
Pin out
1. LD Anode (+),
2. NC,
3. LD Cathode (-) Case,
Inductance 6.8 nH
Pulsed Laser Diodes – PGA – PGEW Series
Pin out
1. LD Cathode (-)
chip bottom,
2. LD Anode (+)
chip top,
Inductance 1.6 nH
Housing / Package Drawing • Laser Chip on Board
Package Drawing
Package Drawing
Package Drawing
Package Y (Chip on Carrier)
Package U (5 mm CD)
Package C (8 – 32 Coax)
Package W (TO-18 Plastic)
Package R (9 mm CD)
Housing / Package Drawing • TO-18-“W“ Plastic Package (1S Devices Only)
www.excelitas.com

IREDs are solid state light sources emiing in the near infrared part of the spectrum. e emission
wavelength is closely matched to the response peak of silicon photodiodes and phototransistors. e
product line provides a broad range of mounting lens and power output options. Both end and side
radiating cases are available. Wide arrays of emission beam proles are available. Devices may be op-
erated in either CW or pulsed operating modes.
IREDs can be combined with Excelitas detectors or phototransistors in integrated assemblies for
optoisolators, optical switches and retro sensors. Optical isolators are useful when electrical isolation
is required, for example to transmit control logic signals to high power switching circuits (which can
be noisy). In an optical switch an object is detected when it passes between the IRED and detector/
phototransistor, for example a coin counter. In a retro sensor an object is detected when the IRED
emied beam is reected onto the detector/photodetector. e retro sensor is used in applications
were the object changes the reectance, for example detecting the end of a ply wood sheet or other
manufactured material.
Our core competencies include: LPE wafer growth; wafer processing of the grown GaAs wafers;
assembly using either epoxy die aach; epoxy encapsulation of the IRED LEDs on lead frame; her-
metically sealed package.
Infrared Emitting Diodes (IREDs) – VTE
Product Table
Symbol
Part Number
Unit
Package
TO-46
TO-46
TO-46
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1 (3 mm)
T-1 (3 mm)
Lateral 4.57 x 1.65 mm
Lateral 4.57 x 1.65 mm
SMD
SMD
SMD
SMD
VTE1013H
VTE1063H
VTE1113H
VTE1291-1H
VTE1291-2H
VTE1291W-1H
VTE1291W-2H
VTE1295H
VTE3322LAH
VTE3324LAH
VTE7172H
VTE7173H
CR10IRD
CR50IRDA
CR50IRH
CR50IRK
Ee typ.
mW/cm2
Irradiance
2.7
5.0
15
3.3
6.5
1.6
3.3
5.5
1.3
2.6
0.6
0.8
-
-
-
-
mm
Distance
36
36
36
36
36
36
36
36
10.16
10.16
16.7
16.7
-
-
-
-
mm
Diameter
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
2.1
2.1
4.6
4.6
-
-
-
-
mW/sr
Ie min.
Radiant
Intensity
27
49
156
32
65
16
32
39
1.0
2.0
1.1
1.7
-
-
-
-
mW
PO
Total
Peak Power
30
80
30
20
25
20
25
20
1.5
2.5
2.5
5.0
6.3
20
10.6
11.4
mA
CW • / Pulsed •
Forward Test
Current
1000 •
1000 •
1000 •
100 •
100 •
100 •
100 •
100 •
20 •
20 •
20 •
20 •
50 •
50 •
50 •
50 •
V
Vf max
Forward
Voltage Drop
2.5
3.5
2.5
2.0
2.0
2.0
2.0
2.0
1.6
1.6
1.8
1.8
2.05
1.8
1.85
1.7
mA
IF max
Max Pulsed
Forward Current
3000
3000
3000
2500
2500
2500
2500
2500
3000
3000
2500
2500
800
800
800
800
nm
Wavelength
940
880
940
880
880
880
880
880
940
940
880
880
770
870
870
950
Degrees
Θ ½
Beam Angle
FWHM
±35
±35
±10
±12
±12
±25
±25
±8
±10
±10
±25
±25
-
±90
±90
±90

Infrared Emiing Diodes (IREDs) VTE
INFRARED
EMITTING
DIODES
FOR HIGH-VOLUME APPLICATIONS
Infrared Emitting Diodes (IREDs) – VTE
41

• Consumer coin readers
• Lottery card readers
• Position sensors – joysticks
• Safety shields
• Encoders – measure speed and direction
• Printers – margin control
• Copiers – monitor paper position or
paper stack height

• End and side radiating congurations
• Selection of emission angle spread using
molded lenses
• Narrow band of emitted wavelengths
• Minimal heat generation
• Low power consumption
Graph 2
Figure 1
Figure 2
Figure 3
Graph 1
TO-46 lensed cap
42 www.excelitas.com
Infrared Emiing Diodes (IREDs) – VTE
Detector – Emitter Spacing (mm)
100
10
1
0.1
0.1 1 10 100
–– VTE106X –– VTE1281 / VTE1285 –– VTE 116X
Narrow beam angle
T-1¾ bullet package
Molded lateral package
.100 NOM.
(2.54)
Relative Output (%)
Detector – Emitter Spacing (mm)
100
10
1
0.1
0.1 1 10 100
–– VTE337XA –– VTE717X –– Inverse Square
Graph 3
Relative Radiant Output Power (%)
Angle off Optical Axis
100
50
0
90 60 30 0 30 60 90
–– VTE1285 –– VTE1281 –– VTE 1281W –– VTE 1281F
Angular Emission On Axis Rel. Irradiance T-1/Lateral Pack-
Housing / Package Drawing – VTE7172 VTE7172H
Housing / Package Drawing – VTE1113H VTE1113H
Housing / Package Drawing – VTE1291 VTE1291H
On Axis Relative Irradiance
For a complete listing of our global offices, visit www.excelitas.com/ContactUs
© 2011 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries
that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors.
008671A_01 0211-742.14
Excelitas Technologies
GmbH & Co. KG
Wenzel-Jaksch-Str. 31
D-65199 Wiesbaden
Germany
Telephone: (+49) 611 492 430
Fax: (+49) 611 492 165
Excelitas Technologies
47 Ayer Rajah Crescent #06-12
Singapore 139947
Telephone: (+65) 6775-2022
Fax: (+65) 6775-1008
Excelitas Technologies
22001 Dumberry Road
Vaudreuil-Dorion, Quebec
Canada J7V 8P7
Telephone: (+1) 450.424.3300
Toll-free: (+1) 800.775.6786
Fax: (+1) 450.424.3345
About Excelitas Technologies
Excelitas Technologies is a global technology leader focused
on delivering innovative, customized solutions to meet the
lighting, detection and other high-performance technology
needs of OEM customers.
From aerospace and defense applications to medical lighting,
analytical instrumentation, clinical diagnostics, industrial, and
safety and security applications, Excelitas Technologies
is committed to enabling our customers' success in their
specialty end-markets. Excelitas Technologies has approximately
3,000 employees in North America, Europe and Asia, serving
customers across the world.
detection@excelitas.com
detection.europe@excelitas.com
detection.asia@excelitas.com
www.excelitas.com/Detection