Photon Detection Solutions For Health, Safety and Security Applications Photon detection for tomorrow's cutting-edge applications. Making your World Healthier, Safer & More Secure. At Excelitas, we're sensing what you need for a healthier, cleaner and safer tomorrow. From Photon Counting Modules to Silicon Detectors, InGaAs Detectors, and Pulsed Laser Diodes, our photon detection technologies are addressing your high-performance and high-volume applications. We have the detection technologies and capabilities to enhance and accelerate your OEM designs. You can depend on our seven world-class design, manufacturing and R&D facilities including: Montreal, Canada; Wiesbaden, Germany; Fremont, USA; Singapore; Manila, Philippines; Shenzhen, China; and Batam, Indonesia. We're sensing what you need. Our Photon Detection Solutions are contributing to: Longer, Healthier Lives. * Luminescence and fluorescence for analytical and clinical diagnostics * Photon counting, particle sizing * PET, CT, and MRI scanning Enhanced Safety and Security. * X-ray scanning of luggage, cargo and food * Laser range finding - industrial and consumer * Smoke detection * Safety curtains Section 1 * Modules and optical receivers * SPCMs based on high-performing APDs - for visible and NIR single photon counting * CPMs and modules for lowest dark noise applications * CCD cameras - for high speed imaging * PIN and APD hybrid receivers - for high signal detection Section 2 * Photodiode Arrays for x-ray Security Scanning * Photodiode solutions with scintillators for x-ray scanners Section 3 * Photodiodes for High-Performance Applications * Si and InGaAs APDs and PIN photodiodes - for industrial applications and high-volume laser range finding * Si APD arrays - for beam positioning and spectrometers * Large-area/UV-enhanced APDs - for molecular imaging, high-energy radiation detection Section 4 * Photodiodes & -Transistors for High-Volume Applications * Smoke detection components * Ambient light sensors * Si-photodiodes and-transistors * Infrared switches Section 5 * Pulsed Laser Diodes and Infrared LEDs (IREDs) * High power laser diodes - for laser range finding * Infrared emitting diodes - for smoke detection and safety curtains 2 www.excelitas.com S ection 1 Modules and Optical Receivers 4 S ection 2 Photodiode Arrays for X-Ray Security Scanning 14 S ection 3 Photodiodes for High-Performance Applications 16 S ection 4 Photodiodes & -Transistors for High-Volume Applications 24 S ection 5 Pulsed Laser Diodes and Infrared LEDs (IREDs) www.excelitas.com 38 3 Modules and optical Receivers Modules & ReceiveRS Single Photon Counting Modules (SPCM) For Analytical & MOLECULAR Applications Single Photon Counting Modules - SPCM Applications * Particle sizing * Confocal microscopy Product Description SPCM-AQRH is a self-contained module that detects single photons of light over the 400 nm to 1060 nm wavelength range - a range and sensitivity that often outperforms a photomultiplier tube. The SPCM-AQRH uses a unique silicon avalanche photodiode (SLiK(R)) with a circular active area that achieves a peak photon detection efficiency of more than 65 % at 650 nm over a 180 m diameter. The photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabilized performance despite ambient temperature changes. Circuit improvements have reduced the overall power consumption. Count speeds exceeding 20 million counts per second (Mc/s) are achieved by the SPCM-AQRH-1X module (> 30 million counts per second on some models). There is a "dead time" of 35 ns between pulses but other values can be set at the factory. As each photon is detected, a TTL pulse of 2.5 Volts (minimum) high into a 50 Ohm load and 15 ns wide is output at the rear BNC connector. The module is designed to give a linear performance at a case temperature between 5 C and 40 C. The SPCM is also available in a 4 channel array format, the SPCM-AQ4C. It is a module of 4 APDs with single power supply and 4 individual outputs. This series of photon counting modules are designed and built to be fully compliant with the European Union Directive 2002/95EEC - Restriction of the use of certain Hazardous Substances in electrical and electronic equipment (RoHS). * Photon correlation spectroscopy * Quantum cryptography * Astronomical observation * Optical range finding * Adaptive optics * Ultra sensitive fluorescence Features and Benefits * Peak photon detection efficiency at 650 nm: 65 % typical * Active area: 180 m diameter * Gated output * Single +5 V supply * FC receptacle option for fiber coupling * EU RoHS compliant * Array of 4 channels available Graph 1 Product Table Characteristics SPCM Series Single Photon Counting Modules - SPCM Photon Detection Efficiency (Pd) 80 Part Number Photo Sensitive Diameter Maximum Dark Count Rate Photon Detection Efficiency @ 700 nm Max. Count Rate before Saturation mm c/s % c/s ns ns Dead Time Pulse Width 70 Unit 60 SPCM-AQRH-10 0.18 1500 65 % 25M 32 15 50 SPCM-AQRH-11 0.18 1000 65 % 25M 32 15 SPCM-AQRH-12 0.18 500 65 % 25M 32 15 SPCM-AQRH-13 0.18 250 65 % 25M 32 15 SPCM-AQRH-14 0.18 100 65 % 25M 32 15 20 SPCM-AQRH-15 0.18 50 65 % 25M 32 15 10 SPCM-AQRH-16 0.18 25 65 % 25M 32 15 SPCM-AQ4C Fibered 500 60 % >2M / channel 50 30 C30902SH-TC 1 0.475 2500 >5 % - - - C30902SH-DTC 2 0.475 350 >5 % - - - 40 30 0 300 500 700 900 1100 Wavelength (nm) 1. C30902SH-TC (0 C operation), 2. C30902SH-DTC (-20 C operation) 4 www.excelitas.com Figure 1 Mechanical Dimensions of the SPCM-AQRH Series o Figure 2 Mechanical Dimensions of the SPCM-AQ4C Figure 3 Package Drawing - TO-8 Flange www.excelitas.com Single Photon Counting Modules - SPCM 5 Modules and optical Receivers Photomultipliers FOR MOLECULAR DETECTION IN Channel Photomultipliers & Modules (CPM) Analytical Applications & MEDICAL Diagnostics Channel Photomultipliers & Modules Applications * Photon counting * Luminescence & fluorescence spectroscopy * Microplate readers * Clinical diagnostics * DNA & cell analysis * Particle measurements * Industrial spectroscopy * Nucleic acid amplification (PCR) Features and Benefits * Extremely low background noise * Best low light level detection limits * High dynamic range & gain Product Table * Low microphonic & magnetic sensitivity Channel Photomultipliers & Modules * Compact size & rugged design * Multiple photocathode and window selections * Plug and play for shortest design-in and time-to-market * Customizations and added features available Ordering Guide Series MH series MH P-type MD series MP series MPRS series MPC series GPDM series 6 Product Description Excelitas' Channel Photomultiplier (CPM) Technology offers a portfolio of ultra-high sensitivity optical detectors designed for extremely low noise, high dynamic range, highest gain and fast response for analytical, scientific and clinical diagnostic applications. A variety of easy-to-use modules with different read-out electronics is available, enabling customers to benefit from the unique performance characteristics of the CPM technology. Depending on the application requirements, customers can select plug-and-play modules for photon counting, DC applications, photon-counting detection up to gigacount range or any other method of photon detection. Added features like thermoelectric cooling, shuttering and other sorts of customization are available upon request. The CPM modules are ideally suited for use in human and environmental health, supporting the market needs for ever smaller sample sizes and lower detection limits in applications like microplate readers, nucleic acid amplification (PCR), luminescence or fluorescence spectroscopy. CPM Tube Model (also as P-Type 1, 2 Unit Spectral Response Active Diameter (min.) nm C911 C1311 115 - 200 Remarks, Other Available Types Dark Current / pA @ 1e5 Equivalent Noise Input Peak Wavelength mm Gain (typ.) (ENI)/W/(Hz) at Peak Resp. Wavel. (typ.) Dark Counts for -P Type and MH-P (typ., nm) (typ.) 5 0.1 1.0 e-17 0.2 2.0 e-17 9 - C1911 15 0.5 3.0 e-17 C922 5 0.5 1.0 e-17 1 2.0 e-17 2 3.0 e-17 MgFl window available 0.1 140 0.4 1 1 All modules are available with optical input aperture of 9 mm (9xx-series), 13 mm (13xx-series) and 19 mm (19xx-series). C1322 C1922 15 Modules with direct anode output (comprising CPM and high voltage supply only) C943 5 2 1.0 e-17 9 8 2.0 e-17 MH modules with CPM tube specially selected for photon-counting applications C1943 15 20 3.0 e-17 5 1 6.0 e-18 Modules for DC measurement, analog output: 0 to 10 Volts C1384 9 4 1.0 e-17 C1984 15 10 2.0 e-17 Modules optimized for photon counting, digitized output via TTL interface C993 5 2 1.0 e-17 8 2.0 e-17 Modules optimized for photon counting, digitized output via RS232 interface C1993 15 20 3.0 e-17 50 C963 5 20 4.0 e-17 100 Temperature stabilized (TE-cooled) MP modules, customized OEM projects only C1363 C1963 15 Highest dynamic range (single photon/s to 1G photon/s range) module with digital output for fluorescence and luminescence measurements and other demanding applications. C973 5 C1343 165 - 320 185 - 650 C984 C1393 C1373 C1973 300 - 670 185 - 750 185 - 850 185 - 900 9 9 9 9 15 Quartz, Boro. window available Quartz window available Quartz window available 1. P- types are photon counting suitable CPM or module types. When ordering please add -P : e.g.: C993-P, MH984-P 80 8.0 e-17 200 1.0 e-16 100 1.5 e-16 400 3.0 e-16 1000 5.0 e-16 200 4 10 10 400 40 100 2 350 10 20 5 450 450 20 400 1000 500 500 2000 5000 2. Also order number www.excelitas.com Technical Specification General Specification Remarks /Conditions Parameter Window materials Symbol CPM (tube) MH-Module MH-P-Type MD MP MPC MPRS GPDM 200 250 2502 250 300 mA +5 to +5.5 Volts dc MgF2, quartz, UV glass, borosilicate Photocathode materials CsI, CsTe, low noise bialkali, bialkali, yellow enhanced, multialkali, extended red multialkali Max. input current Module input current IDD Bias current (typ.) CPM input current Ibias 40 Modules include CPM high voltage supply VDD 2000 V (typ.) +5 to +5.5 +5 to +5.5 +5 to +5.5 +5 to +5.5 2600 V (max.) (max.) (max.) (max.) (max.) (max.) (see note 3) 20 10 1000 Supply voltage/ Input voltage Current amplification 6e6 (typ.), 1e8 (max.) A Max. anode current Output current (max. 30 sec.) Ianode 10 10 Linear anode current Max. (DC linearity limit) 10 % of bias current1 Ilin (see note 1) cpslin Output pulse rise time tresp 3 3 tt 17 17 Timing resolution / jitter tts 2 2 Output pulse width (FWHM) Typical value PW 6 6 Over-illumination protection Active gate control Linear count rate (typ.) Response time Transit time Transit time spread Output impedance Termination for fast output pulse 50 50 Active gate control TTL-pulse, active high GATE voltage Operating temperature TTL-level: low to high / high to low Vgate +5 to +40 C (other temperatures on request) top -20 to +50 C tstore Storage temperature Weight A 3 ns ns 20 ns 50 Digital 100 / 300 100 / 300 0.02 / 0.02 Anode signal Anode sig. 0-10 V TTL RS232 USB/SPI Mcps ns max. 350 g / 420 g / 450 g Unit 100 / 300 Ohms s (modules 9xx-series/13xx-series/19xx-series) Output 3. Gain setting depending on operating mode - see separate datasheet 1. For long term operation: max. average output count rate of < 100 Kcps (anode current of < 100 nA) is recommended 2. Cooling input power: 9 VDC /3.5 A Fan input power: 24 VDC / 100 mA Graph 1 Graph 2 Spectral Response Equivalent Noise Input Quantum Efficiency (%) ENI (W) 100 10 1 0.1 100 200 300 400 500 1E-14 -- C911 -- C921 -- C922 -- C943/ 942 -- C943 -- C944 -- C963/ 962 -- C973/ 972 -- C973 -- C97313 -- C983/ 982 -- C983 -- C993/ 700 800 900 992 Wavelength (nm) 600 -- C911 -- C922 -- C942 -- C962 -- C972 -- C982 -- C992 1E-15 1E-16 1E-17 1E-18 100 200 300 400 500 600 700 800 900 Wavelength (nm) Technical Specification Housing / Package Drawings Dimensions (mm) Module Type 9xx 13xx 19xx A B C D E F G H I J K L M 4.5 36 4.5 33 127 120 30 20 19.5 10 18 45 45 4.5 36 7 33 137 130 30 20 19 10 22.1 50 50 4.5 www.excelitas.com 36 7 33 132 125 30 20 19 10 22.1 50 50 Channel Photomultipliers & Modules 7 Modules and optical Receivers Photomultipliers Gigahertz Photon Detection Module FOR MOLECULAR DETECTION IN Analytical Applications & MEDICAL Diagnostics Gigahertz Photon Detection Module Applications * Multimodal analytical measurements * Luminescence spectroscopy * Time-resolved fluorescence * High through-put screening * DNA & cell analysis * Microplate reading Features and Benefits * Extremely low background noise * Highest dynamic range * High gain * 4 different operating modes * Variable Interface options * Best suited for multimodal analytical applications Product Description The new CPM Gigahertz Photon Detection Module (GPDM) provides the capability of ultra low-light-level detection in DC mode operation. Using DC mode operation with single-photonsensitivity makes the GPDM module superior to traditional counting circuits with their performance limitation at high-light-levels. The fully equipped module includes the Channel Photomultiplier, the high voltage supply, analog current amplifier, A to D conversion and a microcontroller with USB/SPI interface allowing the optimal adaptation to a wide range of applications. Additional features like the synchronization I/O offer the possibility to synchronize the measurement with other devices in the application like flash lamp trigger etc. Utilizing the generic noise advantage of the CPM technology together with highest dynamic range electronics the GPDM represents a real innovation in photon detection, well suited to increase overall OEM system performance. Technical Specification Gigahertz Photon Detection Module Parameter Supply voltage Supply current Condition Min Typ Max Units - 5.0 5.35 5.6 VDC - - 300 - mA Real counting mode 1 - 1e4 Counts per second4 Straight output mode 1 - 5e7 Counts per second4 Fast switching mode 1 - 1e9 Counts per second4 HV reduction mode 3e5 - 1e10 Counts per second4 Switching dead time w/o offset calibration - 1 - ms In fast switching mode Including offset calibration - 20 - ms peak - 20 % - Photoelectrons/ photons Detection range1 QE2 CPM gain3 Sample time Acquisition time Interface - 1E3 adjustable - - Continuous data output 200 - 5000 ms (under development) 1 - 5000 ms Width of measurement Window for flash sequence measurements 3 - 200 s USB 2.0 - 2 - Mbit/second SPI (under development) - - - 1. See below performance characteristics 2. CPM characteristics can be matched to the application's requirements - see spectral response curve 3. Gain pre-set to optimal single photons sensitivity 4. Actual output information is RLU (Relative Light Unit) - counts per second is the C calculated value based on RLU 5. Recommended for best performance 8 www.excelitas.com Figure 1 Block Diagram Gigahertz Photon Detection Module Graph 2 Graph 1 Straight Output Mode Fast Switching Mode Measurement Bandwidth Straight Output Mode at 1 S/s Measurement Bandwidth Extended Range/ Fast Switching Mode at 1 S/s Data Readout, Pulses per second (Cps) Data Readout, Pulses per second (Cps) 1E+11 1E+11 1E+09 1E+09 1E+07 1E+07 1E+05 1E+05 1E+03 1E+03 1E+01 1E+01 1E-01 1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10 1E-01 1E-02 1E+00 1E+02 1E+04 1E+06 Relative Intensity of Light Graph 3 Graph 4 High Voltage Reduction Mode Real Counting Mode Measurement Bandwidth Extended Range/ HV Reduction Mode at 1 S/s Measurement Bandwidth Real Counting Mode at 1 S/s Data Readout conv. to Pulses per second (Cps) 1E+11 Data Readout, Pulses per second (Cps) 1E+11 1E+09 1E+09 1E+07 1E+07 1E+05 1E+05 1E+03 1E+03 1E+01 1E+01 1E-01 1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10 Relative Intensity of Light www.excelitas.com 1E+08 1E+10 Relative Intensity of Light 1E-01 1E-02 1E+00 1E+02 1E+04 1E+06 1E+08 1E+10 Relative Intensity of Light Gigahertz Photon Detection Module 9 HIGH SPEED Modules and optical Receivers SmartBlueTM Linear Camera HIGH SENSITIVITY LINEAR Cameras For MACHINE VISION CCD Linear Cameras - SmartBlueTM Linear Camera Applications * High speed machine vision * Postal / parcel sorting * Web inspection * Surface inspection * OCR / barcode reading web inspection Features and Benefits * High speed, up to 80 MHz data rate. * 14 m square pixels in 512, 1024, 2048 or 4096 element resolutions. * Small size 101.6 x 57.2 x 38.1 mm * 8/10/12-bit output format * High line rates up to 68 kHz * 66 db dynamic range Product Description The SmartBlueTM digital linescan cameras incorporate the latest in photodiode array technology based on the industry standard Reticon(R) devices with state of the art electronics and a robust industrial camera housing. The linescan photodiode array is a pinned photodiode Charge Couple Device which allows for high sensitivity, fast readout, while maintaining high dynamic range, and low image lag. The SmartBlueTM cameras are cost effective high-performance digital linescan cameras, and feature a CameraLinkTM digital interface. These cameras feature geometrically precise photodiode CCD image sensor with 14 um square pixels with resolutions of 512, 1024, 2048 and 4096 pixels. This "next generation" array can achieve data rates up to 80 MHz with superior noise immunity, precise linearity, and high CTE. The SmartBlueTM digital cameras are designed for high line rate applications with low to moderate light conditions and where small size, and low cost are required. * High sensitivity pinned photodiode CCD sensor Technical Specification * CameraLinkTM base output SmartBlueTM Linear Camera * User controlled smart pixel correction Resolution Window Aperture Length Max. Line Rate * Antiblooming control SB0440CLG-011 512 Glass 7.2 mm 68 kHz * Single 12 VDC power supply SB0440CLQ-011 512 Quartz 7.2 mm 68 kHz * Electronic exposure control SB1440CLG-011 1024 Glass 14.4 mm 36.4 kHz SB1440CLQ-011 1024 Quartz 14.4 mm 36.4 kHz SB2480CLG-011 2048 Glass 28.7 mm 37.3 kHz SB2480CLQ-011 2048 Quartz 28.7 mm 37.3 kHz * Ultra-low image lag SB4480CLG-011 4096 Glass 57.3 mm 19.1 kHz * Square pixels with 100 % fill factor SB4480CLQ-011 4096 Quartz 57.3 mm 19.1 kHz * Extended spectral range - 200 - 1000 nm Technical Specification Technical Specification Spectral Sensitivity Curve (1x Gain) Package Drawing* * Real time status LEDs Responsivity (V/mJ/cm ) QE (%) 2 100 90 80 70 60 50 40 30 20 10 0 QE (right scale) 250 350 450 Responsivity (left scale) 550 650 750 850 100 90 80 70 60 50 40 30 20 10 0 950 1050 Wavelength (nm) 10 4.00 [101.6] 2.25 [57.2] * Adjustable gain levels Part Number * not for SB4480CLX www.excelitas.com HIGH SPEED Modules and optical Receivers P-Series CCD Linear Array HIGH SENSITIVITY LINESCAN IMAGERS For MACHINE VISION CCD Linear Imagers Applications * Web inspection * Mail sorting * Production measurement * Position sensing * Spectroscopy * High speed document reading Features and Benefits * 2500:1 dynamic range * Ultra-low image lag * Electronic exposure control * Antiblooming control * Square pixels with 100 % fill factor * Extended spectral range - 200 - 1000 nm Product Description Excelitas' P-series linear imager combines the best features of high-sensitivity photodiode array detection and high speed, charge-coupled scanning to offer an uncompromising solution to the increasing demands of advanced imaging applications. These high-performance imagers feature low noise, high sensitivity, impressive charge-storage capacity, and lag-free dynamic imaging. The 14 m square contiguous pixels in these imagers reproduce images with minimum information loss and artifact generation, while their unique photodiode structure provides excellent blue response extending below 200 nm in the ultraviolet. These versatile imagers are available in array lengths of 512 to 4096 elements with either low-cost glass or UV-enhanced fused silica windows. Technical Specification P-Series CCD Linear Array Spectral Response Range nm Pixel Data Rate MHz Dynamic Range Horizontal Clocking typ. 1 200 - 1000 40 2500 : 1 2o@5V 1 200 - 1000 40 2500 : 1 2o@5V 14 x 14 1 200 - 1000 40 2500 : 1 2o@5V 2048 14 x 14 2 200 - 1000 80 2500 : 1 2o@5V 4096 14 x 14 2 200 - 1000 80 2500 : 1 2o@5V Pixel Count Elements Pixel Size m Number of Outputs RL0512P 512 14 x 14 RL1024P 1024 14 x 14 RL2048P 2048 HL2048P HL4096P Part Number Technical Specification Quantum Efficiency Responsivity (V/mJ/cm2) 100 90 80 70 60 50 40 30 20 10 0 QE (%) QE (right scale) 250 350 450 Responsivity (left scale) 550 650 750 850 100 90 80 70 60 50 40 30 20 10 0 950 1050 Wavelength (nm) www.excelitas.com 11 HIGH SENSITIVITY Modules and optical Receivers Large L-Series CMOS Linear Photodiode Array FORMAT PIXELS For SPECTRosCOPY CMOS Linear Photodiode Arrays - L-Series Applications * Spectroscopy * Colorimetry Features and Benefits * 2.5 mm photodiode aperture * Extremely low dark leakage current * Low power dissipation * Clock-controlled sequential readout at rates up to 1 MHz * Single-supply operation with HCMOS-compatible inputs * Single shift register design * Wide dynamic range * Differential video output for clock noise cancellation * High saturation charge 10 pC (25 m) or 20 pC (50 m) Product Description Excelitas' L-series CMOS linear photodiode arrays offer a high-quality, low-cost solution for spectroscopy and colorimetry applications in the 300-1000 nm range. The L-series family's combination of high sensitivity, low dark current, low switching noise and high saturation charge provides excellent dynamic range and great flexibility in setting integration time. L-series sensors consist of a linear array of silicon photodiodes, each connected to a MOS switch for readout controlled by an integrated shift register scanning circuit. Under external clock control, the shift register sequentially enables each of the switches, directing the charge on the associated photodiode to an output line. A dummy output provides clock noise cancellation. L-series devices are mounted in ceramic side-brazed, 22-pin, dualinline packages with ground and polished fused silica windows and are pin-compatible with earlier Excelitas SB and TB-series sensors. L-series models are available with pixel spacings of 25 m and 50 m and lengths from 128 to 1024 pixels. All models feature a 2500 m pixel aperture to simplify alignment in spectroscopic instruments. Technical Specification P-Series CCD Linear Array * Antiblooming function for low crosstalk Video Capacitance @ 5 V bias pF @ 2.5 V bias pF Sensitivity C/J/cm2 Saturation Exposure nJ/cm2 Saturation Charge pC Dynamic Range Dark Current Typ. pA RL1201 - 6.7 2 x 10-4 50 10 70.000 0.2 RL1202 - 10.2 2 x 10-4 50 10 70.000 0.2 * Polished fused silica window RL1205 - 15.4 2 x 10-4 50 10 70.000 0.2 * Two on-chip diodes for temperature monitoring RL1210 - 28.7 2 x 10-4 50 10 70.000 0.2 RL1501 9.1 - 4 x 10-4 50 20 100.000 0.4 RL1502 14 - 4 x 10-4 50 20 100.000 0.4 RL1505 25 - 4 x 10-4 50 20 100.000 0.4 * Line reset mode for simultaneous reset of all photodiodes Part Number * Wide spectral response: 300 to 1000 nm Operating Temperature: 0C min. to +55C max. Storage Temperature: -25C min. to +85C max. Lag: <1 % Saturation Voltage: 600 mV Technical Specification Technical Specification Quantum Efficiency P-Series CCD Linear Array QE (%) Pixels Pixel Pitch 25 m 128 RL1201LGQ-711 RL1501LFQ-711 256 RL1202LGQ-711 RL1502LFQ-711 512 RL1205LGQ-711 RL1505LFQ-711 1024 RL1210LGQ-711 - 80 70 60 50 40 30 20 10 0 250 350 450 550 650 750 850 950 Pixel Pitch 50 m 1050 Wavelength (nm) 12 www.excelitas.com Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules - InGaAs APD Modules Applications * Laser range finder Product Description These modules comprise of a photodetector (PIN or APD) and a transimpedance amplifier in the same hermetically sealed package. Having both amplifier and photodetector in the same package allows low noise pickup from the surrounding environment and reduces parasitic capacitances from interconnect allowing lower noise operation. The hybrid amplifier C30659 series includes an APD connected to a low noise transimpedance amplifier. 4 models are offered with Silicon APD and 2 models with InGaAs APD. Standard bandwidth of 50 MHz and 200 MHz can accommodate a wide range of applications. Two C30659 models are offered with the APD mounted on a Thermo-electric cooler (the LLAM series) to help improving noise or to keep the APD at constant temperature regardless of the ambient temperature. The C30659 can be customized to meet application specific requirements by using one of the Excelitas rear entry APDs, by choosing a custom bandwidth or by qualifying it to your environmental conditions. Pigtailed versions are also available in a 14 pins DIL package allowing nearly 100 % coupling efficiency. The C30950EH offers a low cost alternative to the C30659. The amplifier is designed to neutralize the input capacitance of a unity voltage gain amplifier. The C30919E uses the same architecture of the C30950EH with the addition of a high voltage temperature compensation circuit which maintain module responsivity constant over a wide temperature range. Two HUV modules are offered with a PIN detector for low frequency high gain application, covering a broad spectrum range from the UV to the near IR. All optical receiver products can be qualified to meet the most demanding environmental specification as described in MIL-PRF-38534. * Confocal microscopy * Video scanning imager * High speed analytical instrumentation * Free space communication * UV light sensing * Distributed temperature sensing Features and Benefits * Ultra low noise * High speed * High transimpedance gain Product Table Si PIN and APD Modules - InGaAs APD Modules Detector Unit Active Diameter Bandwidth Responsivity, 830 nm Responsivity, 900 nm Responsivity, 1060 nm NEP Output Voltage Swing, 50 Ohm mm2 MHz kV/W kV/W kV/W fW /Hz V Package C30659-900-R5BH C30902 0.5 200 460 400 - 35 0.9 TO-8 C30659-900-R8AH C30817 0.8 50 2700 3000 - 14 0.9 TO-8 C30659-1060-R8BH C30954 0.8 200 - 370 200 55 0.9 TO-8 C30659-1060-3AH C30956 3 50 - 450 280 55 0.9 TO-8 C30659-1550-R08BH C30645 80 m 200 - 90 @ 1550 nm - 220 0.9 TO-8 C30659-1550-R2AH C30645 200 m 50 - 340 @ 1550 nm - 130 0.9 TO-8 C30919E C30817 0.8 40 - 1000 250 20 0.7 TO, 1 in C30950EH C30817 0.8 50 520 560 140 27 0.7 TO-8 LLAM-1550-R2AH C30662 0.2 50 - 340 @ 1550 nm - 130 0.9 TO-8 flange LLAM-1060-R8BH C30954 0.8 200 - 370 200 55 0.9 TO-8 flange HUV-1100BGH UV-100 2.5 1 kHz - 130 MV/W - 30 5 min Custom HUV-2000BH UV-215 5.4 1 kHz - 130 MV/W - 70 5 min Custom www.excelitas.com 13 Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays - VTA Series Applications * Luggage scanning * Cargo & container scanning * Food inspection * Non-destructive testing Features and Benefits * Various crystal types available (CsI, GOS, etc.) * Custom chip geometry & pitch * Single or dual-sided assemblies * High responsivity and low capacitance * Onboard electronics available on a custom basis * Multiple photodiode rows Product Description These photodiode arrays are used to generate an X-ray image by scanning an object line by line. The X-rays are converted into light through the attached scintillator crystal. The light intensity is then measured by the photodiodes. The boards are employing chip-on-board technology with optically adapted scintillator crystals. The listed designs can be ordered as a standard part, but can also be customized to meet the needs of a wide variety of applications. Excelitas custom photodiode arrays give customers the option to choose the: * active photodiode area * total number of elements * overall PCB and photodiode chip dimensions * photodiode chip geometry and orientation * electro-optical specifications * single sided vs. double sided PCB * alternative substrate materials (e.g. ceramic) * electrical interface (e.g. connector) First stage amplification electronics can also be added to the custom board design to convert the current generated by the photodiode into an easy to measure voltage. Product Table Photodiode Arrays * VTA Series Substrate Material Dimensions Active Area Photodiode Chip Dimensions Design Design Pitch Number of Elements Scintillator Crystal Type Light Current Uniformity @ 540 nm, 30 nW/cm2 mm mm2 mm mm Junction Capacitance @ H = 0, VR = 0 V Radiometric Sensitivity @ 540 nm typ max typ max ID ID CJ CJ SR % pA pA pF pF A/W Symbol Unit Dark Current @ H = 0, VR = 10 mV min VTA2164H- D-NC- 00- 0 FR4 43.2 x 67.7 1.41 1.40 x 3.50 2.1 64 Custom 5 <10 90 <100 200 0.30 VTA1616H- H- SC- 01- 0 FR4 8.0 x 25.4 2.58 1.51 x 3.25 1.6 16 CsI 5 - 50 - 350 0.30 VTA1616H- L- SC- 02- 0 FR4 16.0 x 25.4 2.58 1.51 x 3.25 1.6 16 GOS 5 - 50 - 350 0.30 VTA2516H-H- SC- 01- 0 FR4 8.0 x 40.0 5.20 2.45 x 3.15 2.5 16 CsI 5 - 50 - 600 0.30 VTA2516H-L- SC- 02- 0 FR4 16.0 x 40.0 5.20 2.45 x 3.15 2.5 16 GOS 5 - 50 - 600 0.30 VTA1216H- H-NC- 00-0 FR4 10.2 x 19.0 3.44 2.30 x 4.95 (dual cell) 1.2 16 Custom 5 - 100 - 300 0.30 VTA1216H- L-NC- 00-0 FR4 17.8 x 19.0 3.44 2.30 x 4.95 (dual cell) 1.2 16 Custom 5 - 100 - 300 0.30 VTA0832H-H-NC- 00-0 FR4 17.8 x 25.4 0.50 1.59 x 2.34 (dual cell) 0.8 32 Custom 5 - 100 - 100 0.30 Electrical characteristics at TAmbient = 25 C 14 www.excelitas.com Figure 1 Side 1 Detail VTA2164H-D Pin Out VTA2164H-D o Figure 2 Side 2 Detail VTA2164H-D D1 D32 Connector J1 (Top Diodes) Connector J2 (Bottom Diodes) Pin Connection Pin Connection 1 D1 1 D1 2 D2 2 D2 3 D3 3 D3 4 D4 4 D4 5 D5 5 D5 6 D6 6 D6 7 D7 7 D7 8 D8 8 D8 9 D9 9 D9 10 D10 10 D10 11 D11 11 D11 12 D12 12 D12 13 D13 13 D13 14 D14 14 D14 15 D15 15 D15 16 D16 16 D16 17 D17 17 D17 18 D18 18 D18 19 D19 19 D19 20 D20 20 D20 21 D21 21 D21 22 D22 22 D22 23 D23 23 D23 24 D24 24 D24 25 D25 25 D25 26 D26 26 D26 27 D27 27 D27 28 D28 28 D28 29 D29 29 D29 30 D30 30 D30 31 D31 31 D31 32 D32 32 D32 33 N/C 33 N/C 34 Common 34 Common Figure 3 Figure 4 Chip Spacing Details, Side 1 (Typ) VTA2164H-D Pos. of Top Diodes Rel. to Bottom Diodes VTA2164H-D Photosensitive Area 0.0545" x 0.0385 (Typ.) or 0.0021 SQ. IN. (Optical Center Line to Optical Center Line) www.excelitas.com Photodiode Arrays - VTA Series 15 Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes - Silicon and InGaAs APDs Applications * Laser range finder * Scanning video imager * Confocal microscope Product Description These rear entry "reach-through" silicon APDs offer the best compromise in terms of cost and performance for applications requiring high speed and low noise photon detection from 400 nm up to 1100 nm. They feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5 mm to 3 mm to accommodate a large variety of applications. The "S" series of the C30902 family of APDs can be used in either their normal linear mode (VR < VBR) or as photon counter in the Geiger mode (VR > VBR). This series is particularly wellsuited for ultra-sensitive photon measurements in biomedical and analytical instruments. Precise temperature control can be achieved with a thermo electric cooler which can be used to improve noise and responsivity or to maintain constant responsivity over a wide range of ambient temperature. High quantum efficiency can be achieved from 1100 nm to 1700 nm with our InGaAs Avalanche Photodiodes. They were designed to maintain high gain, high quantum efficiency and high bandwidth even with their large area of up to 200 m. The short distance between to window and the active area allows easy interface with optical system. * Free space communication * Spectrophotometers * Fluorescence Detection * Luminometer * DNA sequencer * Particle sizing Features and Benefits * Low noise * High gain * High quantum efficiency * Built-in TE-cooler option * Various optical input options Technical Specification Avalanche Photodiodes - Silicon APDs 16 Active Diameter Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient Unit mm pF ns nA V V V/C C30817EH 0.8 2 2 50 300 475 2.2 120 75 C30872EH 3 10 2 100 325 500 2.2 60 C30884E 0.8 4 1 100 190 290 1.1 100 C30902BH 0.5 1.6 0.5 15 185 265 0.7 150 77 C30902BFCH 0.5 1.6 0.5 15 185 265 0.7 150 C30902BSTH 0.5 1.6 0.5 15 185 265 0.7 150 C30902EH 0.5 1.6 0.5 15 185 265 0.7 C30902SH 0.5 1.6 0.5 15 185 265 C30916EH 1.5 3 3 100 315 490 C30921EH 0.25 1.6 0.5 15 185 C30921SH 0.25 1.6 0.5 15 C30954EH 0.8 2 2 50 C30955EH 1.5 3 2 C30956EH 3 10 2 Typical Gain Responsivity 830 nm Responsivity 900 nm Responsivity 1060 nm NEP A/W A/W A/W fW / Hz) 1 TO-5 37 9 30 TO-8 63 8 13 TO-5 60 3 Ball lens TO-18 77 60 3 FC receptale 77 60 3 ST receptale 150 77 60 3 TO-18, flat window 0.7 250 128 108 0.9 TO-18, flat window 2.2 80 265 0.7 150 77 60 185 265 0.7 250 128 108 300 475 2.4 120 75 36 100 315 490 2.4 100 70 100 325 500 2.4 75 45 50 12 Package 20 TO-5 3 TO-18, flat window 0.9 TO-18, light pipe 13 TO-5 34 14 TO-5 25 25 TO-8 www.excelitas.com Product Table Silicon APD - TE-Cooled Active Diameter Active Area Total Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Breakdown Voltage max Unit mm mm2 pF ns nA V V C30902SH-TC 0.5 0.2 1.6 0.5 2 225 - 0.7 C30902SH-DTC 0.5 0.2 1.6 0.5 1 225 - 0.7 C30954E-TC 0.8 0.5 2 2 50 300 475 C30954E-DTC 0.8 0.5 2 2 50 300 C30955E-TC 1.5 1.8 3 2 100 C30955E-DTC 1.5 1.8 3 2 3 7 10 2 C30956E-TC Temperature Coefficient Responsivity 830 nm Responsivity 900 nm Responsivity 1060 nm Noise Current A/W A/W A/W pA/sqrt(Hz) 250 128 108 - 0.04 TO-8 flange 250 128 108 - 0.02 TO-8 flange 2.4 120 - 75 - 0.2 TO-8 flange 475 2.4 120 - 75 - 0.04 TO-8 flange 315 490 2.4 100 - 70 - 0.2 TO-8 flange 100 315 490 2.4 100 - 70 - 0.05 TO-8 flange 100 325 500 2.4 75 - 45 - 0.2 TO-8 flange Typical Gain Package TC stands for single stage cooler, operating temperature 0 C DTC stands for double stage cooler, operating temperature -20 C Product Table InGaAs APD BW Dark Current Breakdown Voltage min Breakdown Voltage max Temperature Coefficient pF MHz nA V V V/C 200 2.5 800 70 40 90 0.14 200 2.5 800 70 40 90 0.14 C30645EH 80 1.25 1000 35 40 90 C30645ECERH 80 1.25 1000 35 40 90 C30644EH 50 0.6 2000 25 40 C30644ECERH 50 0.6 2000 25 40 Active Diameter Capacitance m C30662EH C30662ECERH Unit Typical Gain Responsivity 1550 nm NEP A/W fW/sqrt(Hz) 10 9.3 100 TO-18 10 9.3 100 Ceramic carrier 0.14 10 9.3 25 TO-18 0.14 10 9.3 25 Ceramic carrier 90 0.14 10 9.3 15 TO-18 90 0.14 10 9.3 15 Ceramic carrier Graph 1 Figure 1 Figure 2 Typical Spectral Responsivity @ 22C Package Drawing - TO-8 Flange Typical TO-5 Package* Figure 3 Figure 4 Figure 5 Typical TO-8 Package* Ceramic Carrier Typical TO-18 Package* Package Responsivity (A/W) 1000 100 10 1 400 500 600 700 800 900 1000 1100 Wavelength (nm) -- C30902EH, C30921EH -- C30902SH, C30921SH *Note: Package dimension for indication only. Exact package dimension can be found on products datasheets. www.excelitas.com Avalanche Photodiodes - Silicon and InGaAs APDs 17 Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Si APD Arrays Photodiodes FOR ANALYTICAL Applications Avalanche Photodiodes - Si APD Arrays Applications * Spectroscopy * Particle detection * Spot tracking and alignment systems * Adaptive optics * LIDAR (Light Detection And Ranging) Features and Benefits * High quantum efficiency * Hermetically sealed packages * Monolithic chip with minimal dead space between elements * Specific tailored wavelength response * RoHS compliant Product Description C30927 series of quadrant Si Avalanche Photodiode and the C30985E multi-element APD array utilize the double-diffused "reach-through" structure. This structure provides ultra high sensitivity at 400-1000 nm. The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight. The C30927EH-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specified wavelength. The C30985E is a 25 element monolithic linear APD array having a high inter-electrode resistance with a 75 m dead space between the elements. Packages have a common ground and bias with a separate lead for each element output. Product Table Avalanche Photodiodes - Si APD Arrays Number of Elements Photo Sensitive Diameter Responsivity Dark Current per Element Spectral Noise Current Capacitance @ 100 KHz Response Time NEP mm mm A/W nA pA/Hz pF ns fW /Hz) V C30927EH-01 4 1.5 15(@ 1060 nm) 25 0.5 1 3 33(@ 1060 nm) 275 - 425 C30927EH-02 4 1.5 62(@ 900 nm) 25 0.5 1 3 16(@ 900 nm) 275 - 425 C30927EH-03 4 1.5 55(@ 800 nm) 25 0.5 1 3 9(@ 800 nm) 275 - 425 C30985E 25 0.3 31(@ 900 nm) 1 0.1 0.5 2 3(@ 900 nm) 250 - 425 Part Number Unit NEP 15.24 (0.600) Figure 1 Figure 2 Package Drawing - C30927 Series Package Drawing - C30985E 15.24 (0.600) 18 www.excelitas.com Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes 1060 nm NIR Enhanced Si APDs Photodiodes FOR ANALYTICAL Applications 1060 nm NIR Enhanced Si APDs Applications * Range finding * LIDAR (Light Detection And Ranging) * YAG laser detection Features and Benefits * High quantum efficiency at 1060 nm Product Description The C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach-through" structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics. To help simplify many design needs, these APDs are also available in Excelitas' high-performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series. Please refer to the respective sections in this catalog. * Fast response time * Wide operating temperature range * Low capacitance * Hermetically sealed packages * RoHS compliant Graph 1 Product Table Spectral Responsivity Characteristics Si APDs - NIR Enhanced 100 Part Number 10 Photo Sensitive Diameter Responsivity @ 1060 nm Unit mm C30954EH 0.8 C30955EH C30956EH Dark Current Spectral Noise Current Capacitance @ 100 KHz A/W nA pA/Hz 36 50 0.5 1.5 34 100 3.0 25 100 Vop Range Response Time NEP @ 1060 nm pF ns fW /Hz) V 2 2 14 275 - 425 0.5 3 2 15 275 - 425 0.5 10 2 20 275 - 425 Figure 1 Figure 2 Package Drawing - C30954EH, C30955EH Package Drawing - C30956EH 1 300 400 600 800 1000 1200 1400 Wavelength (nm) -- C30954EH -- C30955EH www.excelitas.com -- C30956EH 19 Avalanche Photodiodes Photodiodes for High-Performance Applications FOR HIGH ENERGY RADIATION DETECTIONS APPLICATIONS, Large Area Si-APDs - UV-Enhanced APDs MOLECULAR IMAGING Large Area Si-APDs - UV-Enhanced APDs Applications * Nuclear medicine * Fluorescence detection * High energy physics * Medical imaging * Radiation detection * Particle physics * Instrumentation * Environmental monitoring Features and Benefits * High quantum efficiency * Low dark currents * Easy coupling to scintillator crystals * Immunity to electromagnetic fields * Short wavelength enhanced responsivity * Custom packaging available * Excellent timing resolution * RoHS compliant Product Description The C30739ECERH Silicon Avalanche Photodiode (APD) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nanometers. It has low noise, low capacitance and high gain. It is designed to have an enhanced short wavelength sensitivity, with quantum efficiency of 60 % at 430 nm. The standard ceramic carrier package allows for easy handling and coupling to scintillating crystals such as LSO and BGO. Combined with the superior short wavelength responsivity, it makes this APD ideal in demanding applications such as Positron Emission Tomography (PET). The C30626FH and C30703FH series are large area Si APDs in flat pack packages for either direct detection or easy coupling to scintillator crystals. The C30626 uses a standard reach through structure and has peak detection at about 900 nm. The C30703 is enhanced for blue wavelength response and has peak quantum efficiency at ~ 530 nm. These APDs are packaged in square flat pack with or without windows or on ceramics. The no-window devices can detect direct radiation of X-rays and electrons at the energies listed, and the windowed packages are best for easy scintillator coupling. Product Table Large Area Si-APDs - UV-Enhanced APDs Dark Current Spectral Noise Current A/W nA pA/ Hz 22 (@900 nm) 250 0.5 10 x 10 16 (@530 nm) 10 0.7 5.6 x 5.6 20 (@430 nm) 50 1.4 Photo Sensitive Diameter Responsivity Unit mm C30626FH 5x5 C30703FH C30739ECERH Part Number Capacitance @ 100 KHz Response Time NEP pF ns fW/Hz) V 30 5 23 (@900 nm) 275 - 425 120 5 40 (@530 nm) 275 - 425 60 2 - 275 - 425 Graph 1 Graph 2 Quantum Efficiency vs. Wavelength Quantum Efficiency vs. Wavelength Quantum Efficiency (%) Quantum Efficiency (%) 100 90 80 70 60 60 40 50 20 40 0 30 340 380 420 460 500 600 700 800 900 1000 1100 350 400 450 Wavelength (nm) -- C30700-100 -- C30700-200 -- C30626 20 Vop Range 500 550 600 650 700 750 Wavelength (nm) -- C30739 series www.excelitas.com Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-13/4 (TO-like) Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F i n di n g Applications C30737 High Speed, Low Voltage APD - C30724 Low Temperature Coefficient APD Applications * Laser range finding for 600 to 950 nm range * Optical communication * Analytical Instrumentation Features and Benefits Product Description The Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response above 1 GHz. The C30724 as a low gain APD can be operated at fixed voltage without the need of a temperature compensation. Standard versions are available in two active area sizes: 0.23 and 0.5 mm diameter. They are offered in the traditional hermetic TO housing ("E"), in cost effective plastic through-hole T-13/4 (TO-like, "P") packages, and in leadless ceramic carrier (LCC, "L") package for surface mount technology. All listed varieties are ideally suited for high-volume, low cost applications. Customization of these APDs is offered to meet your design challenges. Operation voltage selection and binning or specific wavelength filtering options are among many of the application specific solutions available. * Optimized versions for 900 and 800 nm peak sensitivity * Standard versions with 500 and 230 m active diameter * Various package types: hermetic TO, plastic TO, SMD * High gain at low bias voltage * Low breakdown voltage * Fast response, tR ~ 300 ps * Low noise, in ~ 0.2 pA /Hz * RoHS compliant Product Table C30737 Epitaxial Silicon APD - C30724 Low Gain APD Package Optical Bandpass Filter Active Area Diam. design design Part Number Peak Sensitivity Wavelength Breakdown Voltage typ min max peak VBR VBR Temp. Coeff. Of VOP , for Constant M Gain@ peak Responsivity @ peak Total Dark Current (Bulk + Surface) typ typ typ typ M M ID Noise Current, (f = 10 kHz, f=1 Hz) Capacitance Rise & Fall Time, (RL = 50 , 10 % 90 % -10 % Points) max typ typ ID CD nm m nm V V V / C nA nA pA / Hz pF ns C30737EH-230-80 TO - 230 800 120 200 0.5 100 50 2.5 10 0.1 1.0 0.22 C30737PH-230-80 T-13/4 - 230 800 120 200 0.5 100 50 2.5 10 0.1 1.0 0.22 C30737LH-230-80 LCC - 230 800 120 200 0.5 100 50 2.5 10 0.1 1.0 0.22 C30737LH-230-81 LCC 635 230 635 120 200 0.5 100 35 2.5 10 0.1 1.0 0.22 C30737EH-500-80 TO - 500 800 120 200 0.5 100 50 5 20 0.3 2.0 0.30 C30737PH-500-80 T-13/4 - 500 800 120 200 0.5 100 50 5 20 0.3 2.0 0.30 C30737LH-500-80 LCC - 500 800 120 200 0.5 100 50 5 20 0.3 2.0 0.30 C30737LH-500-81 LCC 635 500 800 120 200 0.5 100 35 5 20 0.3 2.0 0.30 C30737EH-230-90 TO - 230 900 180 260 1.3 100 60 2.5 10 0.2 0.6 0.50 C30737PH-230-90 T-13/4 - 230 900 180 260 1.3 100 60 2.5 10 0.2 0.6 0.50 C30737PH-230-90 LCC - 230 900 180 260 1.3 100 60 2.5 10 0.2 0.6 0.50 C30737PH-230-92 LCC 905 230 905 180 260 1.3 100 60 2.5 10 0.2 0.6 0.50 C30737EH-500-90 TO - 500 900 180 260 1.3 100 60 5 20 0.4 1.0 0.60 C30737PH-500-90 T-13/4 - 500 900 180 260 1.3 100 60 5 20 0.4 1.0 0.60 C30737LH-500-90 LCC - 500 900 180 260 1.3 100 60 5 20 0.4 1.0 0.60 C30737LH-500-92 LCC 905 500 905 180 260 1.3 100 60 5 20 0.4 1.0 0.60 C30724EH TO - 500 920 - 350 - 15 8.5 20 40 0.1 1.0 5 C30724PH T-13/4 - 500 920 - 350 - 15 8.5 20 40 0.1 1.0 5 Unit Electrical Characteristics at TAmbient = 22 C; at operating voltage, Vop www.excelitas.com 21 Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes - Quadrant Detectors - UV-Enhanced Applications * Telecom * Instrumentation * Photometry * Laser power monitoring Product Description Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety of applications. The PIN structure allows high quantum efficiency and fast response for detection of photon in the 400 nm to 1100 nm range. The YAG series offers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed with a guard ring to collect current generated outside of the active area, they are the detectors of choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise. Precise beam positioning can be achieved by using our quadrant detectors. They are designed with 4 pie-shaped quadrant sections from doping process thus reducing to almost zero the "dead" space between each quadrant. Each quadrant is connected to an isolated lead. The C30741 provide fast response and good quantum efficiency in the spectral range between 300 nm to 1100 nm. Designed for high-speed, high-volume production and cost sensitive applications, these photodiodes are offered in plastic package, either TO style or SMD packages with a visible blocking filter option. Our UV series are high quality Si PIN photodiode in hermetically sealed TO package designed for the 220 nm to 1100 nm wavelength region with enhanced operation in the UV range. Low noise detection is achieved by operating the UV series in photovoltaic mode (0 V bias). The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within 2 % across the detector active area. * Fiber optic test equipment * High speed switching * Spot tracking * Laser range finders * Missile guidance * Laser warning system Features and Benefits * High speed * High responsivity * Hermetically sealed * Large area available * High shunt resistance, low dark current Product Table InGaAs PIN, High Speed, Peak Wavelength at 1550 nm Active Diameter Responsivity Peak Capacitance BW Dark Current Breakdown Voltage Operating Voltage m A/W pF GHz nA V V C30616ECERH 50 0.95 0.35 3.5 <1 100 5 Ceramic carrier C30617BH 100 0.95 0.8 3.5 <1 100 5 TO-18, ball lens C30617BFCH 100 0.95 0.8 3.5 <1 100 5 TO-18, FC receptacle C30617BSCH 100 0.95 0.8 3.5 <1 100 5 TO-18, SC receptacle C30617BSTH 100 0.95 0.8 3.5 <1 100 5 TO-18 ST receptacle C30617ECERH 100 0.95 0.6 3.5 <1 100 5 Ceramic carrier C30618BFCH 350 0.95 4 0.75 1 100 5 TO-18, FC receptacle C30618GH 350 0.95 4 0.75 1 100 5 T0-18 C30618ECERH 350 0.95 4 0.75 1 100 5 Ceramic carrier C30637ECERH 75 0.95 0.4 3.5 <1 100 5 Ceramic carrier Unit 22 Package www.excelitas.com Product Table InGaAs PIN, Large Area, Peak Wavelength at 1550 nm Active Diameter Responsivity Peak Capacitance Shunt Resistance BW Dark Current Breakdown Voltage Operating Voltage mm A/W pF Mega Ohm MHz nA V V C30641EH-TC 1 0.95 40 50 75 5 80 0-5 TO-8, flange, TE-cooled C30641EH-DTC 1 0.95 40 50 75 5 80 0-5 TO-8, flange, dual TE C30641GH 1 0.95 40 50 75 5 80 0-5 TO-18 C30642GH 2 0.95 150 25 20 10 50 0-5 TO-5 C30665GH 3 0.95 200 10 3 25 50 0-5 TO-5 C30723GH 5 0.95 950 5 3 - 50 0-5 TO-5 C30619GH 0.5 0.95 8 250 350 1 80 0-10 TO-18 Unit Package Product Table Silicon PIN Active Diameter Active Area Responsivity Peak Peak Wavelength Capacitance Rise/Fall Time Dark Current Shunt Resistance Breakdown Voltage Operating Voltage um mm2 A/W nm pF ns nA M V V C30741PH-15S 1.5 x 1.5 2.25 0.47 800 11 2 0.05 300 10 Plastic T-13/4 through-hole C30741PFH-15S 1.5 x 1.5 2.25 0.47 800 11 2 0.05 - 300 10 T-13/4 visible blocking C30807EH 1 0.8 0.6 900 2.5 5 10 - >100 45 TO-18 C30808EH 2.5 5 0.6 900 6 8 30 - >100 45 TO-5 C30822EH 5 20 0.6 900 17 10 50 - >100 45 TO-8 C30809EH 8 50 0.6 900 35 15 70 - >100 45 TO-8 C30810EH 11 100 0.6 900 70 20 300 - >100 45 TO-36 TO-18 Unit Package C30971EH 0.5 0.2 0.5 830 1.6 0.5 10 - >200 100 FFD-100H 2.5 5.1 0.6 850 8.5 3.5 5 - >125 15 TO-5 FFD-200H 5.0 20 0.6 850 30 5 10 - >125 15 3 pin, 0.6 inch dia. FND-100QH 2.5 5.1 0.64 920 8.5 <1n 10 - 150 100 TO-5 UV-040BQH 1.0 0.81 0.62 900 25 - - >500 - 0 TO-5, response down to 200 nm UV-100BQH 2.5 5.1 0.62 900 150 - - >100 - 0 TO-5, response down to 200 nm UV-215BGH/340 0.0 - - - 0 TO-5, response down to 250 nm UV-215BQH 5.5 23.4 0.62 900 700 - - >50 - 0 TO-5, response down to 200 nm UV-245BGH 5 18.5 0.62 900 630 - - >75 - 0 TO-5, response down to 250 nm UV-245BQH 5 18.5 0.62 900 630 - - >75 - 0 TO-5, response down to 200 nm YAG-100AH 2.5 5.1 0.7 1000 2.5 5 <20 - >200 180 TO-5 YAG-200H 5.0 20 0.7 1000 6 5 <100 - >200 180 TO-8 YAG-444AH 16.0 200 0.7 1000 35 5 <200 - >200 180 TO-36 SR10BP 0.65 900 10 10 10 170 SMT SR10BP-B 0.65 900 10 10 10 170 SMT 0.56 x 0.56 4 150 10 170 SMT SR10DE-B 6.71 4 150 10 170 SMT PFD10 0.31 SMT SR10DE CR50DE 0.6 880 25 200 5 170 0.5 880 2.5 3000 0.5 50 Product Table Specialty Silicon Detectors Description Unit Active Diameter Active Area Capacitance Rise/Fall Time Dark Current Breakdown Voltage min Responsivity 900 nm Responsivity 1060 nm Noise Current mm mm2 pF ns nA V A/W A/W pA/sqrt(Hz) Package C30845EH Quadrant PIN 8 50 8/q 6 70 nA 100 0.6 0.17 0.26/q TO-8 YAG-444-4AH Quadrant PIN 11.3 100 9/q 8 <75 nA 200 0.6 0.5 0.2/q Custom Dual wavelength detector Si-Si (Top/Bottom) 3.5 9.9 300/300 - 50 / 50 M - 0.6/0 0.25 / 0.15 0.033 / 0.133 Custom DTC-140H www.excelitas.com InGaAs and Si PIN Diodes - Quadrant Detectors - UV-Enhanced 23 Photodiodes & -Transistors for high-volume Applications OPTOELECTRONIC Photodiodes and IREDs Components for SMOKE Detector Applications Selected Photodiodes and Infrared Emitting Diodes (IREDs) Applications * Electro-optical smoke detection Features and Benefits * High quality components: photodiodes, IREDs (UL- listed) * Binning for optimized transfer function * Customized optical block (PD+IRED) assemblies * Smoke chamber assemblies according specified transfer function Product Description An electro-optical smoke detector consists of an Infrared LED (IRED) and Photodiode (PD) assembly, which exhibits a signal under the presence of smoke in the detection volume (smoke chamber). Signal range under smoke and clean-air conditions and their long term stability are key features of a smoke detector module. Excelitas offers IRED and PD components as well as customized assemblies with specified signal level range. Such an assembly can be an optical block containing an IRED and PD for (SMD) board soldering or the complete smoke chamber, which are produced in high-volumes. Please contact Excelitas to discuss your requirements. Product Table Selected Photodiodes Used in Smoke Detection Applications Package Active Area Symbol Short Circuit Current Dark Current Junction Capacitance Radiometric Sensitivity @ P min max typ typ ISC IO CJ SR Spectral Range Peak Wavelength Noise Equivalent Power Range P NEP typ mm A nA nF A/W nm nm W/Hz Lensed sidelooker IRT 5.27 50 20 40 0.55 725-1150 925 5.3 x 10-14 VTP413H Lensed sidelooker 7.45 120 (typ) 30 50 0.55 400-1150 925 2.3 x 10-14 VTP100H Flat sidelooker IRT 7.45 35 30 50 0.5 725-1150 925 2.5 x 10-14 Lensed ceramic 11 200 (typ) 30 300 0.55 400-1100 925 - Unit VTP7840H VTP1188SH Product Table Selected Infrared LEDs (IREDs) Used in Smoke Detection Applications Package Symbol Total Power Test Current Forward Drop Voltage typ typ @ IFT typ PO IFT VF 1/2 mA (pulsed) V degree VTE1291-1H T-13/4 lensed 20 100 1.5 12 VTE1291-2H T-13/4 lensed 25 100 1.5 12 VTE1295 T-13/4 lensed 20 100 1.5 8 Unit 24 Half Power Beam Angle www.excelitas.com Photodiodes & -Transistors for high-volume Applications Left: Spectrally Adapted Photodiodes and Phototransistors AMBIENT Right: C30737PH Series T-13/4 (TO-like) Through-Hole Package (4.9 mm Diameter) LIGHT SENSORS Spectrally Adapted Photodiodes and Phototransistors Applications * Interior and exterior light switching (dusk/dawn switch) * Interior and exterior light control (dimming) * Automotive headlight dimmer * Display contrast control * Energy conservation * Oil burner flame monitoring Features and Benefits * Response approaching human eye using Excelitas' IR-BLOCTM technology * Perfect light sensor in conjunction with Excelitas pyroelectric detectors for motion controlled light switches * RoHS compliant Product Description Ambient light sensors from Excelitas provide an easy solution for applications that require a response similar to the human eye, making it ideal when the response should only be influenced by visible light. These devices contribute in various applications to energy conservation in both fixed and portable devices. There are three main devices types, one being filtered photodiodes, the second filtered phototransistors and finally wavelength selective devices based on III-V material. They are available in a number of standard packages, including surface mount for automated assembly. Product Table Spectrally Adapted Photodiodes and Phototransistors * Selectable wavelength detection range * Small footprint Package * Surface mount packages Active Area Dark Current Radiometric Sensitivity @ P Junction Capacitance Peak Wavelength Spectral Range min typ max typ max ISC ID ID CJ CJ SR Range P mm2 A nA nA pF pF A/W nm nm Symbol Unit Short Circuit Current @ H = 100fc, 2850 K typ VTP1220FBH T-13/4 flat 1.219 0.7 - 10 - 18 0.27 400-700 550 VTP9812FH T-13/4 flat 1.548 0.7 - 10 - 18 0.034 400-700 580 VTT9812FH T-13/4 flat 0.192 100 - 100 - - 7 450-700 585 SR10SPD 470-0.9 SMT 0.70 - - 0.03 150 - 0.18 380-556 470 SR10SPD 525-0.9 SMT 0.73 - - 0.03 100 - 0.25 480-560 525 Electrical characteristics at TAmbient = 25 C Graph 1 Graph 2 Responsivity @ 25C VTT9812FH IR-BLOCTM VTT9812FH Output Versus Low Light Levels RE (A/W/cm ) Light Current (A) 2 7.00E-01 20 18 16 14 12 10 8 6 4 2 0 6.00E-01 5.00E-01 4.00E-01 3.00E-01 2.00E-01 1.00E-01 0.00E-01 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) www.excelitas.com 0 2 4 6 8 10 12 Light Level (fc) 25 Photodiodes & -Transistors for high-volume Applications FAST RESPONSE Silicon Photodiodes - VTP Series SILICON Photodiodes FOR Industrial AND Commercial Applications Silicon Photodiodes - VTP Series Applications * Smoke detection * Barcode scanning * Light meters * Pulse oximeters Features and Benefits * Visible to IR spectral range * Integral visible rejection filters available * 1 to 2 % linearity over 7 to 9 decades Product Description Photodiodes in this series have been designed for low junction capacitance. The lower the capacitance, the faster the response of the photodiode when the RC time constant is your limiting factor. Also, speed can be further increased by reverse biasing the photodiodes. These devices have excellent response in the IR region and are well matched to IR LEDs (VTE series). Some photodiodes are available in packages which incorporate a visible rejection filter, effectively blocking light below 700 nm. Photodiodes made with the VTP process are suitable for operation under reverse bias conditions but may be used in the photovoltaic mode. Typical reverse breakdown voltages are around 140 V. Low dark currents under reverse bias are also a feature of this series. * Low dark currents * High shunt resistance * Low capacitance Product Table Silicon Photodiodes - VTP Series Package Active Area Symbol Short Circuit Current Dark Current Junction Capacitance Radiometric Sensitivity @ P min max max typ ISC ID CJ SR Spectral Range Peak Wavelength Active Area Range P NEP typ mm2 A nA pF A/W nm nm W /Hz VTP100H Flat sidelooker IRT 7.45 35 30 50 0.5 725 -1150 925 2.5 x 10-14 VTP100CH Flat sidelooker 7.45 50 30 50 0.55 400 -1150 925 9.0 x 10-14 VTP1012H TO-46 1.6 10 7 6 0.55 400 -1150 925 8.7 x 10-14 VTP1112H TO-46 lensed 1.6 30 7 6 0.55 400 -1150 925 8.7 x 10-14 VTP1188SH Lensed ceramic 11 200 (typ) 30 300 0.55 400 -1100 925 - VTP1220FBH T-13/4 flat 1.219 0.7 10 18 0.27 400 - 725 550 - VTP1232H T-13/4 2.326 100 25 180 0.6 400 -1100 920 - VTP1232FH T-13/4 flat 2.326 21 25 180 0.6 400 -1100 920 - VTP1332H T-13/4 IRT 2.326 75 25 180 0.55 725 -1150 920 - VTP1332FH T-13/4 flat IRT 2.326 17 25 180 0.55 725 -1150 920 - VTP3310LAH T1 0.684 24 35 25 0.55 400 -1150 925 1.9 x 10-13 VTP3410LAH T1 IRT 0.684 15 35 25 0.55 700 -1150 925 1.9 x 10-13 Electrical characteristics at TAmbient = 25 C 26 www.excelitas.com Product Table Silicon Photodiodes - VTP Series Active Area Package Short Circuit Current Dark Current Junction Capacitance Radiometric Sensitivity @ P min max max typ ISC ID CJ SR Symbol Spectral Range Peak Wavelength Active Area range P NEP typ A nA pF A/W nm nm W /Hz VTP413H Lensed sidelooker 7.45 120 (typ) 30 50 0.55 400 -1150 925 2.3 x 10-14 VTP4085H Ceramic 21 200 (typ) 100 500 0.55 400 -1100 925 - VTP4085SH Ceramic 21 200 (typ) 50 500 0.55 400 -1100 925 - VTP5050H TO-5 7.45 40 18 24 0.55 400 -1150 925 1.4 x 10-13 VTP6060H TO-8 20.6 120 35 60 0.55 400 -1150 925 1.9 x 10-13 VTP7110H Lateral 0.684 6 35 25 0.55 400 -1150 925 1.9 x 10-13 VTP7210H Lateral IRT 0.684 5 35 25 0.55 700 -1150 925 1.9 x 10-13 VTP7840H Lensed sidelooker IRT 5.27 50 20 40 0.55 725 -1150 925 5.3 x 10-14 VTP8350H Ceramic 7.45 65 30 50 0.55 400 -1150 925 1.8 x 10-13 VTP8440H 8 mm ceramic 5.16 30 15 15 0.55 400 -1150 925 1.3 x 10-13 VTP8551H Mini-DIP 7.45 50 30 50 0.55 400 -1150 925 1.8 x 10-13 VTP8651H Mini-DIP IRT 7.45 35 30 50 0.5 725 -1150 925 2.0 x 10-13 SMT clear plastic 5.269 75 20 50 0.6 400 -1150 925 2.0 x 10-13 Unit VTP8740_TRH VTP8840_TRH mm2 SMT IRT 5.269 50 20 50 0.6 725 -1150 925 2.0 x 10-13 VTP9412H 6 mm ceramic 1.6 10 7 6 0.55 400 -1150 925 8.7 x 10-14 VTP9812FH T-13/4 flat 1.548 0.7 10 18 0.034 400 - 700 580 - SMT 0.73 - 0.01 - - 820-935 890 - SR10SPD 880-0.9 Electrical characteristics at TAmbient = 25 C Graph 3 Graph 1 Graph 2 Absolute Spectral Response* Rise/Fall Times - Non Saturated* Relative Dark Current vs. Temperature* Radiometric Sensitivity, A/W Response Time (sec 10 - 90 %) Relative Dark Current 1000 10 0.7 0.6 100 0.5 1 0.4 10 0.3 0.1 0.2 1 0.1 0.1 0.01 0 200 400 600 800 1000 0 1200 1 0.1 0 10 25 50 RLCJ Product (sec) Wavelength (mm) -- Q.E. = 0.50 -- glass window or epoxy coated -- Q.E. = 0.75 -- visible blocking filter 75 100 Temperature (Degrees C) -- photovoltaic -- V = 10 V -- R.C. limit Graph 4 Graph 5 Graph 6 Rel. Junction Capacitance vs. Voltage* Temp. Coefficient of Light Current vs. Wavelength* Rel. Short Circuit Current vs. Illumination* Relative Capacitance Temperature Coefficient (%) / Degree (C) 1.4 0.5 10000 1.2 0.4 1000 1 0.3 0.8 0.2 0.6 0.1 0.4 0 0.2 Relative Short Circuit Current 100 10 1 0.1 -0.1 0 -0.2 -50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Bias Voltage (Volts) 400 600 800 1000 1200 0.01 0.01 0.1 1 10 100 1000 10000 Illumination (fc @ 2850 K) Wavelength (mm) -- small area -- large area * Typical characteristic curves @ 25 C (unless otherwise noted) www.excelitas.com Silicon Photodiodes - VTP Series 27 Photodiodes & -Transistors for high-volume Applications Silicon Photodiodes - VTD Series INDUSTRY STANDARD SILICON Photodiodes Silicon Photodiodes - VTD Series Applications * Pulse oximetry * Automotive * Surface mount assembly process Features and Benefits * Alternate source for industry standard photodiodes * Surface mount package available * Available in package with integrated IR filtering * Large area PIN available on ceramic package * RoHs compliant Product Description The VTD series are photodiodes which have been used in many applications as replacement for competitive devices. Product Table Silicon Photodiodes - VTD Series Industry Equivalent Package Active Area Symbol Junction Capacitance Radiometric Sensitivity @ P min max typ typ ISC ID CJ SR Spectral Range Peak Wavelength Noise Equivalent Power Range P NEP W /Hz typ A nA nF A/W nm nm Ceramic 16.73 150 @ 5 mW/cm2, 2850 K 50 0.50 0.55 400-1150 860 - VTD34H BPW34 Mini-DIP 7.45 50 @ 1000 Lux, 2850 K 30 0.060 0.60 400-1100 900 4.8 x 10-14 VTD34FH BPW34F Mini-DIP 7.45 15 @ 0.5 mW/cm2, 940 nm 30 0.060 0.60 725-1150 940 4.8 x 10-14 VTD34SMH BPW34 SMT 7.45 50 @ 1000 Lux, 2850 K 30 0.025 0.60 400-1100 900 4.8 x 10-14 VTD34FSMH BPW34F SMT 7.45 15 @ 0.5 mW/cm2, 940 nm 30 0.080 0.60 725-1150 940 4.8 x 10-14 VTD205H SFH205 TO-92 7.41 15 @ 0.5 mW/cm , 940 nm 30 0.072 0.60 800-1100 925 - VTD205KH SFH205K TO-92 7.41 50 @ 1000Lux, 2850 K 30 0.072 0.60 400-1100 925 - VTD206H SFH206 TO-92 7.41 15 @ 0.5 mW/cm2, 940 nm 30 0.072 0.60 750-1100 925 - VTD206KH SFH206K TO-92 7.41 50 @ 1000Lux, 2850 K 30 0.072 0.60 400-1100 925 - VTH2090H S1723-04 Black ceramic 84.64 65 @ 100 Lux 10 0.070 0.60 400-1100 960 - VTD31AAH 28 Dark Current CLD31AA Unit mm2 Short Circuit Current 2 www.excelitas.com Figure 1 Package Drawing - VTD Series - Mini-DIP Package .182 (4.62) .172 (4.37) .039 (1.00) NOM. .182 (4.62) .172 (4.37) .039.098 NOM. (1.00) (2.49) NOM. OPTICAL CL .200 (5.08) NOMINAL .023 NOM. (0.58) .023 .130 NOM. NOM. (0.58) (3.30) .042 (1.07) .098 NOM. (2.49) .032 (0.81) OPTICAL CL .042 (1.07) .032 (0.81) .162 (4.11) .152 (3.86) .162 (4.11) .152 (3.86) ACTIVE AREA .200 (5.08) NOMINAL ACTIVE AREA .080 (2.03) .070 (1.78) CATHODE .130 NOM. (3.30) CATHODE .024 x .010 .024 x .010 (0.61 x 0.25) NOM. (0.61 x 0.25) NOM. .080 (2.03) .070 (1.78) Figure 2 Package Drawing - VTD Series - SMT Package .080 (2.03) .070 (1.78) .182 (4.62) .172 (4.37) .039 (1.00) NOM. .40 (10.2) NOMINAL .042 (1.07) .032 (0.81) .098 NOM. (2.49) OPTICAL CL .300 (7.62) NOMINAL .024 x .010 NOM. (0.61 x 0.25) CATHODE 6 NOM. .162 (4.11) .152 (3.86) .000 (0.00) .008 (0.20) ACTIVE AREA Figure 3 Package Drawing - VTD Series - TO-92 Package .275 (6.99) .245 ( 6.22) .165 (4.19) .155 (3.94) CATHODE MARK EPOXY CONTOUR NOT CONTROLLED ON THIS SURFACE .026 (0.66) .020 (0.51) .100 NOM. (2.54) SENSITIVE AREA .102 (2.59) R .097 (2.46) www.excelitas.com .098 (2.49) NOM. .023 (0.58) SQ .017 (0.43) ANODE CATHODE .100 NOM. (2.54) .75 (19.0) MINIMUM Silicon Photodiodes - VTD Series 29 Photodiodes & -Transistors for high-volume Applications Blue-Enhanced Silicon Photodiodes - VTB Series Ultra High Dark Resistance SILICON Photodiodes FOR Industrial AND Commercial Applications Silicon Photodiodes - VTB Series - Ultra High Dark Resistance Applications * Ambient light sensing * UV and blue light sensing * Flame monitoring * Light meters * Photometry Features and Benefits * UV to IR spectral range * Integral IR rejection filters available * Response @ 365 nm, 0.14 A/W typical * Response @ 220 nm, 0.06 A/W typical with UV window * 1 to 2 % linearity over 7 to 9 decades * Very low dark current Product Description This series of P on N silicon planar photodiodes have been designed for optimum response through the visible part of the spectrum. Units with UV transmitting windows also exhibit excellent response in the UV. "B" series units have a built-in infrared rejection filter for applications requiring a response approximating the human eye. Photodiodes made with the VTB process are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. All photodiodes in this series exhibit very high shunt resistance. This characteristic leads to very low offsets when used in high gain transimpedance op-amps circuits. * High shunt resistance * RoHs compliant VTB1012 VTB6061 Small area planar silicon photodiode in flat window TO-46 package VTB4051 VTB8341 Planar silicon photodiode mounted on a ceramic substrate and coated with a layer of clear epoxy 30 Large area planar silicon photodiode in a flat window TO-8 package Planar silicon photodiode mounted on a ceramic substrate and coated with a layer of clear epoxy www.excelitas.com Product Table Silicon Photodiodes - VTB Series - Ultra High Dark Resistance Package Active Area Symbol Unit Short Circuit Current @ 100fc, 2850K Dark Current Junction Capacitance Radiometric Sensitivity @ 365 nm min max typ typ ISC ID CJ SR Spectral Range Peak Wavelength Noise Equivalent Power Range P NEP typ mm2 A nA nF A/W nm nm W / Hz 50 0.50 0.10 0.55 @ 925 nm 400 -1150 925 9.0 x 10-14 VTB100AH Flat sidelooker 7.1 VTB1012H TO-46 1.6 8.0 0.10 0.31 0.09 320 -1100 920 3.0 x 10-14 VTB1012BH TO-46 1.6 0.80 0.10 0.31 0.28 @ 540 nm 330 - 720 580 5.3 x 10-14 VTB1013H TO-46 1.6 8.0 0.02 0.31 0.09 320 -1100 920 5.9 x 10-15 VTB1013BH TO-46 1.6 0.80 0.02 0.31 0.28 @ 540 nm 330 - 720 580 1.1 x 10-14 VTB1112H TO-46 lensed 1.6 30.0 0.10 0.31 0.19 320 -1100 920 3.0 x 10-14 VTB1112BH TO-46 lensed 1.6 3.0 0.10 0.31 0.28 @ 540 nm 330 - 720 580 5.3 x 10-14 VTB1113H TO-46 lensed 1.6 30.0 0.02 0.31 0.19 320 -1100 920 5.9 x 10-15 VTB1113BH TO-46 lensed 1.6 3.0 0.02 0.31 0.28 @ 540 nm 330 - 720 580 1.1 x 10-14 VTB4051H Ceramic 14.8 100 0.25 3.0 0.10 320 -1100 920 2.1 x 10-14 VTB5051H TO-5 14.8 85 0.25 3.0 0.10 320 -1100 920 2.1 x 10-14 VTB5051BH TO-5 14.8 8 0.25 3.0 0.28 @ 540 nm 330 - 720 580 3.7 x 10-14 VTB5051JH TO-5 with 3 pins 14.8 85 0.25 3.0 0.10 320 -1100 920 2.1 x 10-14 VTB5051UVH TO-5 14.8 85 0.25 3.0 0.038 @ 220 nm 200 -1100 920 2.1 x 10-14 VTB5051UVJH TO-5 with 3 pins 14.8 85 0.25 3.0 0.038 @ 220 nm 200 -1100 920 2.1 x 10-14 VTB6061H TO-5 37.7 260 2.0 8.0 0.10 320 -1100 920 5.7 x 10-14 VTB6061BH TO-5 37.7 26 2.0 8.0 0.28 @ 540 nm 330 - 720 580 1.0 x 10-13 VTB6060CIEH TO-5 37.7 2.0 8.0 460 - 675 555 1.0 x 10-13 TO-5 with 3 pins 37.7 260 2.0 8.0 0.10 320 -1100 920 5.7 x 10-14 VTB6061UVH TO-5 37.7 260 2.0 8.0 0.04 @ 220 nm 200 -1100 920 5.7 x 10-14 VTB6061UVJH TO-5 with 3 pins 37.7 260 2.0 8.0 0.04 @ 220 nm 200 -1100 920 5.7 x 10-14 VTB8341H Ceramic 5.16 35 0.10 1.0 0.10 320 -1100 920 2.4 x 10-14 VTB8440H 8 mm ceramic 5.16 35 2.0 1.0 0.10 320 -1100 920 5.9 x 10-14 VTB8440BH 8 mm ceramic 5.16 4 2.0 1.0 0.28 @ 540 nm 330 - 720 580 1.1 x 10-13 VTB8441H 8 mm ceramic 5.16 35 0.10 1.0 0.10 320 -1100 920 1.3 x 10-14 VTB8441BH 8 mm ceramic 5.16 4 0.10 1.0 0.28 @ 540 nm 330 - 720 580 2.4 x 10-14 VTB9412H 6 mm ceramic 1.6 8 0.10 0.31 0.09 320 -1100 920 3.0 x 10-14 VTB9412BH 6 mm ceramic 1.6 0.8 0.10 0.31 0.28 @ 540 nm 330 - 720 580 5.3 x 10-14 VTB9413H 6 mm ceramic 1.6 8 0.02 0.31 0.09 320 -1100 920 5.9 x 10-15 VTB9413BH 6 mm ceramic 1.6 0.8 0.02 0.31 0.28 @ 540 nm 330 - 720 580 1.1 x 10-14 VTB6061JH Figure 1 Package Drawing - VTB Series - Flat Sidelooker Package www.excelitas.com Silicon Photodiodes - VTB Series - Ultra High Dark Resistance 31 32 Figure 2 Figure 3 Package Drawing - VTB Series - TO-46 Package Package Drawing - VTB Series - TO-5 Package Figure 4 Figure 5 Package Drawing - VTB Series - 8mm Ceramic Package Package Drawing - VTB Series - TO-46 Lensed Figure 6 Figure 7 Package Drawing - VTB Series - Ceramic Package Package Drawing - VTB Series - TO-8 Package Silicon Photodiodes - VTB Series - Ultra High Dark Resistance www.excelitas.com Graph 1 Graph 2 Absolute Spectral Response Absolute Spectral Response "B" Series (Filtered) Radiometric Sensitivity (A / W) Radiometric Sensitivity (A / W) 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 200 400 600 800 1000 1200 Wavelength (nm) 200 400 600 800 1000 1200 Wavelength (nm) -- With UVT Lens -- Glass Window or Epoxy Coated -- Q.E. = 0.50 -- Q.E. = 0.75 Graph 4 Graph 3 Relative Junction Capacitance vs. Voltage (Refered to Zero Bias) Rel. Current or Resistance vs. Temperature (Refered to 25C) Relative Dark Current or Resistance Relative Capacitance 100 1.6 1.4 10 1.2 1.0 1 0.8 0.6 0.1 0.4 0.2 0.01 0 -50 -25 0 25 50 75 100 -12 -10 -8 -6 -4 -2 0 2 Bias Voltage(V) Temperature (Degree) -- ID -- RD Graph 5 Graph 6 Relative Short Circuit Current vs. Illumination Rise/Fall Times - Non Standard Relative Short Circuit Current Response Time (sec 10 - 90 %) 10000 1000 1000 100 100 10 1 10 0.1 0.001 1 0.001 0.01 1 10 100 1000 10000 0.1 1 Illumination, fc (2850 K) -- Small Area -- Large Area www.excelitas.com 10 100 RLCJ Product (sec) -- Small Area Cells < 5.0 mm2 -- Large Area Cells > 100 mm2 Silicon Photodiodes - VTB Series - Ultra High Dark Resistance 33 Photodiodes & -Transistors for high-volume Applications Photo transistors Phototransistors VTT Series - CR Series FOR Industrial AND Commercial Applications Phototransistors - VTT Series - CR Series Applications * Coin counters * Position sensors * Remote controllers * Ambient light sensing * Street light switching * Oil burner flame monitoring * Safety shields * Margin control-printers * Monitor paper position and stack height Features and Benefits * Low cost visible and near IR photo detection * Low dark current * Available in package with integrated visible filtering * Available in package with integrated IR filtering * Available in a wide range of packages * RoHs compliant Product Description Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. The phototransistor can be viewed as a photodiode whose output current is fed into the base of a conventional transistor. These photodiode-amplifier combinations are put together to overcome the major limitation of photodiodes: unity gain. The typical gain of a phototransistor can range from 100 to over 1500. Many applications demand a greater output than can be generated by a photodiode alone. Even though the signal of a photodiode can be amplified through external circuitry (operational amplifier for example) this is not always cost effective. In such cases, phototransistors provide a lower cost alternative. Figure 1 Package Drawing - VTT Series - T-13/4 Package CR50TE * Surface mounting device * Solid state ceramic chip * High thermal conductivity * Special type (CR50TE-DLF) with daylight filter on request 34 www.excelitas.com Product Table Phototransistors - VTT Series - CR Series Package Exposed Active Area Dark Current @ VCE = 10 V min max min IC ICED VBR(CEO) mm2 mA nA V Symbol Unit Collector Breakdown @ IC= 100 A, 0 fc Light Current @ 100 fc, VCE = 5 V Emitter Breakdown @ IC= 100 A, 0 fc Saturation Voltage @ IC= 100 A, 100 fc Rise/Fall Time IC= 1.0 mA RL = 100 Angular Response min max Typical Typical VBR(CEO) VCE(SAT) tR / tF 1/2 V S Range V Spectral Range nm VTT1222WH T-1 3/4 0.19 1.9 10 @ VCE = 20 V 50 6.0 0.25 2.0 40 400 -1050 VTT1223WH T-1 3/4 0.19 1.5 10 @ VCE = 20 V 40 6.0 0.25 3.0 40 400 -1050 VTT1225H T-1 3/4 0.19 4.0 100 30 5.0 0.25 1.5 5 400 -1050 VTT1226H T-1 3/4 0.19 7.5 100 30 5.0 0.25 3.0 5 400 -1050 VTT1227H T-1 3/4 0.19 12.0 100 30 5.0 0.25 4.0 5 400 -1050 VTT3122EH Coax hermetic 0.19 1.2 100 @ VCE = 20 V 40 6.0 0.25 2.5 8 400 -1050 VTT3123EH Coax hermetic 0.19 4.0 100 30 4.0 0.25 4.0 8 400 -1050 VTT3323LAH Long T-1 0.19 2.0 @ 20 fc 100 30 5.0 0.25 3.0 10 400 -1050 VTT3324LAH Long T-1 0.19 4.0 @ 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 VTT3325LAH Long T-1 0.19 6.0 @ 20 fc 100 30 5.0 0.25 5.0 10 400 -1050 VTT3423LAH Long T-1 0.19 1.0 @ 20 fc 100 30 5.0 0.25 3.0 10 700 -1050 VTT3424LAH Long T-1 0.19 2.0 @ 20 fc 100 30 5.0 0.25 4.0 10 700 -1050 VTT3425LAH Long T-1 0.19 3.0 @ 20 fc 100 30 5.0 0.25 5.0 10 700 -1050 VTT7122H Lateral 0.19 1.0 100 30 5.0 0.25 2.0 36 400 -1050 VTT7123H Lateral 0.19 2.0 100 30 5.0 0.25 2.0 36 400 -1050 VTT7125H Lateral 0.19 4.5 100 30 5.0 0.25 2.0 36 400 -1050 VTT7222H Lateral 0.19 0.9 100 30 5.0 0.25 2.0 36 700 -1050 VTT7223H Lateral 0.19 1.8 100 30 5.0 0.25 2.0 36 700 -1050 VTT7225H Lateral 0.19 4.0 100 30 5.0 0.25 4.0 36 700 -1050 VTT1212H T-1 3/4 0.63 2.0 @ 20 fc 100 30 5.0 0.25 4.0 10 400 -1050 VTT1214H T-1 3/4 0.63 4.0 @ 20 fc 100 30 5.0 0.25 6.0 10 400 -1050 VTT9002H TO-106 flat 0.63 2.0 100 30 6.0 0.55 4.0 50 400 -1050 VTT9003H TO-106 flat 0.63 5.0 100 30 6.0 0.55 6.0 50 400 -1050 VTT9102H TO-106 lensed 0.63 6.0 100 @ VCE = 5 V 30 4.0 0.55 6.0 42 400 -1050 VTT9103H TO-106 lensed 0.63 13.0 100 @ VCE = 5 V 30 4.0 0.55 10.0 42 400 -1050 VTT1015H TO-46 0.4 25 @ VCE = 20 V 40 6.0 0.40 5.0 35 400 -1050 VTT1016H TO-46 1.0 25 @VCE = 20 V 30 6.0 0.40 5.0 35 400 -1050 VTT1017H TO-46 2.5 25 20 4.0 0.40 8.0 35 400 -1050 VTT1115H TO-46 lensed 1.0 @ 20 fc 100 30 6.0 0.40 5.0 15 400 -1050 VTT1116H TO-46 lensed 2.0 @ 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 VTT1117H TO-46 lensed 4.0 @ 20 fc 100 30 4.0 0.40 8.0 15 400 -1050 VTT9812FH T-1 3/4 flat 0.19 0.10 100 30 5.0 0.25 1.5 56 450 - 700 CR50TE Ceramic SMD (A2) 0.18 400 @ VCE =20 V 40 0.3 @ IC= 2 mA 4.0 @ RL = 50 Wide viewing angle 400 -1070 Figure 2 Figure 3 Package Drawing - VTT Series - T-1 Package Package Drawing - VTT Series - TO-46 Package www.excelitas.com Phototransistors - VTT Series - CR Series 35 Graph 1 Graph 2 Rel. Spectral Response (Referred to Peak Response of Clear Case) Relative Output vs. Illumination (Normalized at 100 fc) Relative Output (%) Relative Output 100 10 80 1 60 0.1 40 0.01 20 0 0.001 400 500 600 700 800 900 1000 1100 1 10 100 Wavelength (nm) 1000 Illumination, fc (2850K) -- Clear Case -- Black Epoxy IR Transmitting Case Graph 3 Graph 4 Angular Response Coax Packages Angular Response Molded Epoxy Packages Relative Output (%) Relative Output (%) 100 100 80 80 60 60 40 40 20 20 0 0 -90 -60 -30 0 30 60 90 -90 Angle of Optical Axis -60 -30 0 30 60 90 Angle of Optical Axis -- VTT122XW, VTT712X, VTT722X -- VTT121X, VTT332XLA, VTT342XLA -- VTT122X -- VTT312XE Graph 5 Graph 6 Angular Response Ceramic Packages Angular Response 10-46 Packages Relative Output (%) 100 100 80 80 60 60 40 40 20 20 0 0 -90 -60 -30 0 30 60 90 -90 -60 Angle of Optical Axis -- VTT900X -- VTT910X 36 Phototransistors - VTT Series - CR Series -30 0 30 60 90 Angle of Optical Axis -- VTT101X -- VTT111X www.excelitas.com Photodiodes & -Transistors for high-volume Applications Infrared Switches VTR - VTL INFRARED Switches Infrared Switches - VTR - VTL Series Applications * Coin counters * Paper-presence detection in copiers and printers * Toner density control in copiers and printers * Object sensing * Distance detection * Position sensing * Rotational speed Features and Benefits Product Description Excelitas' optoswitches are ideal for non-contact sensing applications. They consist of an emitter and a detector integrated in a plastic housing. The emitter is an IR LED while the detector is either a phototransistor or a photodarlington. These optoswitches are available either in transmissive or reflective configuration. Product Table VTR Series Reflective Optoswitch Light Current (min) * Fully integrated emitter and detector assembly * Contains no mechanical parts to wear-out Output Element Detector Device Dark Current (max) Test Conditions Test Conditions * Provides non-contact object sensing IP If VCE d Id If Unit mA mA V mm A mA V * Low power consumption VTR16D1H 0.3 20 5 2.5 0.1 0 5 * Small size VTR17D1H 0.3 20 5 2.5 0.1 0 5 Phototransistor * Low cost VTR24F1H 6.0 20 30 50.8 - - - Photodarlington * RoHs compliant Symbol VCE Phototransistor VTL11D Series Transmissive Optoswitch Light Current (min) Light Current (min) Test Conditions Saturation Voltage (max) Emitter Detector If VCE Id If VCE VSAT If VCE Width Width Unit mA mA V nA mA V V mA V mm mm VTL11D1H 0.5 20 5 100 0 10 0.4 20 0.25 None None VTL11D1-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.50 None 2 20 5 100 0 10 0.4 20 1.8 None None VTL11D3-20H 0.6 20 5 100 0 10 0.4 20 1.8 0.50 None VTL11D5-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.50 0.25 VTL11D6-20H 0.075 20 5 100 0 10 0.4 20 0.25 0.50 0.12 VTL11D7H 0.75 20 5 100 0 10 0.4 20 0.25 None 0.50 VTL11D7-20H 0.225 20 5 100 0 10 0.4 20 0.25 0.50 0.50 VTL11D3H Test Conditions Aperture Combination IP Symbol Test Conditions VTL23DxA Series Transmissive Optoswitch Light Current (min) Light Current (min) Test Conditions Test Conditions Aperture Combination Emitter Detector IP If VCE Id If VCE VSAT If VCE Width Width Unit mA mA V nA mA V V mA V mm mm VTL23D0A21H 0.2 20 10 100 0 10 0.4 20 0.1 0.50 0.25 0.50 Symbol www.excelitas.com Saturation Voltage (max) Test Conditions VTL23D0A22H 0.2 20 10 100 0 10 0.4 20 0.1 0.50 VTL23D1A00H 0.5 20 10 100 0 10 0.4 20 0.4 1.0 1.0 VTL23D1A22H 0.5 20 10 100 0 10 0.4 20 0.4 0.50 0.50 VTL23D2A00H 2.5 20 10 100 0 10 0.6 20 1.8 1.0 1.0 VTL23D3A00H 1.0 10 10 100 0 10 0.4 10 0.8 1.0 1.0 37 Pulsed Laser Diodes and Infrared LEDs (IREDs) HIGH POWER Pulsed Laser Diodes PGA - PGEW Series LASER DIODES for Range Finding Pulsed Laser Diodes - PGA - PGEW Series Applications * Range finders * Safety light curtains * Adaptive cruise control Product Description Pulsed semiconductor lasers in the near IR are commonly used for long distance time-of-flight or phase-shift range finder systems. Excelitas offers a broad range of suited pulsed 905 nm lasers designs include multi cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak optical output power. Physical stacking of laser chips resulting in up to 300 W of peak optical output power. Chip on board assemblies are available for hybrid integration. A selection of 6 metal, hermetically sealed package types are available for harsh environment applications. A molded epoxy resin TO-18 type package is available for high-volume applications. Critical parameters are pulse-width and rise/fall times. The pulse width may be reduced allowing for increased current drive and resulting in higher peak optical power. Quantum well laser design offers rise and fall times of < 1 ns however the drive circuit lay out and package inductance play the greater role and should be designed accordingly. Excelitas offers a variety of package types with different inductive values to assist to this end. Our core competencies include: MOVPE wafer growth; wafer processing of the grown GaAs wafers; assembly using either epoxy or solder die attach; epoxy encapsulation of lasers mounted on lead frame; hermetically sealed product qualification to MIL STD and custom requirements. * Laser therapy Features and Benefits * Multi cavity lasers concentrate emitting source size * Quantum well structure * High peak pulsed power into aperture * Excellent power stability with temperature Product Table PGA Pulsed Laser Family Selection Table, Typ. Wavelength 905 nm, 5 mm Spectral Width Device (X = pkg) (H = RoHS Compliance) 38 Description Emitting Area # of Chips Total # of Emitting Stripes PGAx1S03H 1 PGAx1S09H 1 DPGAx1S03H Typical Peak Power at 10 A, 100 ns Typical Peak Power at 30 A, 100 ns 225 m (9 mils) Stripe Width Width m Height m 75 m (3 mils) Stripe Width 1 75 1 8W 1 225 1 1 2 75 5 DPGAx1S09H 1 2 225 5 TPGAx1S03H 1 3 75 10 TPGAx1S09H 1 3 225 10 QPGAx1S03H 1 4 75 15 QPGAx1S09H 1 4 225 15 TPGAx2S03H 2 6 75 175 TPGAx2S09H 2 6 225 175 QPGAx2S03H 2 8 75 225 QPGAx2S09H 2 8 225 225 QPGAx3S03H 3 12 75 450 QPGAx3S09H 3 12 225 450 30 W 15 W 50 W 23 W 75 W 33 W 100 W 45 W 150 W 65 W 200 W 95 W 300 W Beam Spread Parallel to Junction (FWHM) Beam Spread Perpendicular to Junction (FWHM) II nm / C 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 10 25 0.25 Typical Temperature Coefficient Preferred Packages "S" Metal Can TO-18 "W" Plastic Encapsulated TO-18 www.excelitas.com Graph 1 Graph 2 Peak Radiant Intensity vs. Temperature Radiant Intensity vs. F Number Relative Radiant Intensity (%) Relative Radiant Intensity (%) 100 110 100 90 80 70 60 10 50 40 30 20 10 0 1 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 0 100 1 10 100 F Number Temperature (Degrees) Graph 3 Graph 4 Spectral Plot Distribution Radiant Intensity vs. Pulse Width for Safe Operation Relative Radiant Intensity (%) Relative Radiant Intensity (%) 100 1000 50 100 Safe operating region 1 10 880 905 930 1 10 100 1000 Wavelength (nm) Pulse Width at fwhm (ns) Graph 5 Graph 6 Safe Operation Region (Plastic Encaps.) Center Wavelength vs. Temperature Relative Radiant Intensity (%) Center Wavelength (nm) 920 1000 915 910 100 905 900 895 10 890 Safe operating region 885 0 880 10 100 1000 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Pulse Width at FWHM (ns) QP6EW currently being verified. Figure 1 Package Drawing Package S (TO-18) Pin out 1. LD Anode (+), 2. LD Cathode (-) Case, Inductance 5.2 nH www.excelitas.com Pulsed Laser Diodes - PGA - PGEW Series 39 Figure 2 Package Drawing Package U (5 mm CD) Pin out 1. LD Anode (+), 2. NC, 3. LD Cathode (-) Case, Inductance 5.0 nH Figure 3 Housing / Package Drawing * Laser Chip on Board Package Y (Chip on Carrier) Pin out 1. LD Cathode (-) chip bottom, 2. LD Anode (+) chip top, Inductance 1.6 nH Figure 4 Package Drawing Package C (8 - 32 Coax) Pin out 1. LD Anode (+), 2. LD Cathode (-) Case, Inductance 12 nH Figure 5 Package Drawing Package R (9 mm CD) Pin out 1. LD Anode (+), 2. NC, 3. LD Cathode (-) Case, Inductance 6.8 nH Figure 6 Housing / Package Drawing * TO-18-"W" Plastic Package (1S Devices Only) Package W (TO-18 Plastic) Pin out 1. (Pkg Flat) LD Anode (+), 2. LD Cathode (-), Inductance 5.0 nH 40 Pulsed Laser Diodes - PGA - PGEW Series www.excelitas.com Pulsed Laser Diodes and Infrared LEDs (IREDs) INFRARED Infrared Emitting Diodes (IREDs) VTE EMITTING DIODES forhigh-volume Applications Infrared Emitting Diodes (IREDs) - VTE Applications * Consumer coin readers * Lottery card readers Product Description IREDs are solid state light sources emitting in the near infrared part of the spectrum. The emission wavelength is closely matched to the response peak of silicon photodiodes and phototransistors. The product line provides a broad range of mounting lens and power output options. Both end and side radiating cases are available. Wide arrays of emission beam profiles are available. Devices may be operated in either CW or pulsed operating modes. IREDs can be combined with Excelitas detectors or phototransistors in integrated assemblies for optoisolators, optical switches and retro sensors. Optical isolators are useful when electrical isolation is required, for example to transmit control logic signals to high power switching circuits (which can be noisy). In an optical switch an object is detected when it passes between the IRED and detector/ phototransistor, for example a coin counter. In a retro sensor an object is detected when the IRED emitted beam is reflected onto the detector/photodetector. The retro sensor is used in applications were the object changes the reflectance, for example detecting the end of a ply wood sheet or other manufactured material. Our core competencies include: LPE wafer growth; wafer processing of the grown GaAs wafers; assembly using either epoxy die attach; epoxy encapsulation of the IRED LEDs on lead frame; hermetically sealed package. * Position sensors - joysticks * Safety shields * Encoders - measure speed and direction * Printers - margin control * Copiers - monitor paper position or paper stack height Features and Benefits * End and side radiating configurations * Selection of emission angle spread using molded lenses * Narrow band of emitted wavelengths * Minimal heat generation * Low power consumption Product Table Infrared Emitting Diodes (IREDs) - VTE Part Number Package Irradiance Distance Diameter Radiant Intensity Total Peak Power Forward Test Current Forward Voltage Drop Max Pulsed Forward Current Wavelength Beam Angle FWHM 1/2 Symbol Ee typ. Ie min. PO CW * / Pulsed * Vf max IF max Unit mW/cm2 mm mm mW/sr mW mA V mA nm Degrees VTE1013H TO-46 2.7 36 6.4 27 30 1000 * 2.5 3000 940 35 VTE1063H TO-46 5.0 36 6.4 49 80 1000 * 3.5 3000 880 35 VTE1113H TO-46 15 36 6.4 156 30 1000 * 2.5 3000 940 10 VTE1291-1H T-13/4 (5 mm) 3.3 36 6.4 32 20 100 * 2.0 2500 880 12 VTE1291-2H T-13/4 (5 mm) 6.5 36 6.4 65 25 100 * 2.0 2500 880 12 VTE1291W-1H T-13/4 (5 mm) 1.6 36 6.4 16 20 100 * 2.0 2500 880 25 VTE1291W-2H T-13/4 (5 mm) 3.3 36 6.4 32 25 100 * 2.0 2500 880 25 VTE1295H T-13/4 (5 mm) 5.5 36 6.4 39 20 100 * 2.0 2500 880 8 T-1 (3 mm) 1.3 10.16 2.1 1.0 1.5 20 * 1.6 3000 940 10 VTE3322LAH VTE3324LAH T-1 (3 mm) 2.6 10.16 2.1 2.0 2.5 20 * 1.6 3000 940 10 VTE7172H Lateral 4.57 x 1.65 mm 0.6 16.7 4.6 1.1 2.5 20 * 1.8 2500 880 25 VTE7173H Lateral 4.57 x 1.65 mm 0.8 16.7 4.6 1.7 5.0 20 * 1.8 2500 880 25 CR10IRD SMD - - - - 6.3 50 * 2.05 800 770 - CR50IRDA SMD - - - - 20 50 * 1.8 800 870 90 CR50IRH SMD - - - - 10.6 50 * 1.85 800 870 90 CR50IRK SMD - - - - 11.4 50 * 1.7 800 950 90 www.excelitas.com 41 Graph 1 Graph 2 Graph 3 On Axis Rel. Irradiance T-1/Lateral Pack- On Axis Relative Irradiance Angular Emission 100 100 100 10 10 1 1 Relative Output (%) Relative Radiant Output Power (%) 50 0.1 0.1 0.1 1 10 100 0 0.1 10 100 90 60 Detector - Emitter Spacing (mm) Detector - Emitter Spacing (mm) -- VTE337XA -- VTE717X -- Inverse Square 1 -- VTE106X -- VTE1281 / VTE1285 -- VTE 116X 30 0 30 60 90 Angle off Optical Axis -- VTE1285 -- VTE1281 -- VTE 1281W -- VTE 1281F Figure 1 Housing / Package Drawing - VTE1291 VTE1291H .100 NOM. (2.54) Narrow beam angle T-13/4 bullet package Figure 2 Housing / Package Drawing - VTE1113H VTE1113H TO-46 lensed cap Figure 3 Housing / Package Drawing - VTE7172 VTE7172H Molded lateral package 42 Infrared Emitting Diodes (IREDs) - VTE www.excelitas.com About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. From aerospace and defense applications to medical lighting, analytical instrumentation, clinical diagnostics, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 3,000 employees in North America, Europe and Asia, serving customers across the world. detection@excelitas.com detection.europe@excelitas.com detection.asia@excelitas.com www.excelitas.com/Detection Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 Excelitas Technologies 47 Ayer Rajah Crescent #06-12 Singapore 139947 Telephone: (+65) 6775-2022 Fax: (+65) 6775-1008 For a complete listing of our global offices, visit www.excelitas.com/ContactUs (c) 2011 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. 008671A_01 0211-742.14