VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 1Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mountable Fast Soft Recovery Diode, 8 A
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Output rectification and freewheeling diode in
inverters, choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Note
(1) Connecting one pin only
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 8 A
VR1000 V, 1200 V
VF at IF1.3 V
IFSM 110 A
trr 80 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
common
cathode
+
3
Anode
2
1
Anode --
D-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 8 A
VRRM 1000/1200 V
IFSM 110 A
VF8 A, TJ = 25 °C 1.3 V
trr 1 A, 100 A/μs 80 ns
TJRange - 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-8EWF10S-M3 1000 1100 4
VS-8EWF12S-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 96 °C, 180° conduction half sine wave 8
A
Maximum peak one cycle
non-repetitive surge current IFSM (1) 10 ms sine pulse, rated VRRM applied 93
10 ms sine pulse, no voltage reapplied 110
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 43 A2s
10 ms sine pulse, no voltage reapplied 61
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 432 A2s
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 2Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(2) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 8 A, TJ = 25 °C 1.3 V
Forward slope resistance rtTJ = 150 °C 25.6 m
Threshold voltage VF(TO) 0.93 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 8 Apk
25 A/μs
TJ = 25 °C
270 ns
Reverse recovery current Irr 4.2 A
Reverse recovery charge Qrr 1μC
Snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 50
Soldering temperature TSFor 10 s 240 °C
Approximate weight 1g
0.03 oz.
Marking device Case style D-PAK (TO-252AA) 8EWF10S
8EWF12S
IFM trr
di
dt
Irr
Qrr
t
tatb
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 3Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
1
80
29
110
130
90
35
140
4
60
7
8EWF.. S Series
RthJC (DC) = 2.5 °C/W
Conduction angle
30°
60°
90°
120°
180°
86
70
100
120 Ø
150
04
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
8
110
14
120
2
130
140
100
60
6
8EWF..S Series
RthJC (DC) = 2.5 °C/W
Ø
Conduction period
30° 60°
90°
120°
180° DC
70
80
90
1210
2
0
12
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
5
6
9
231
4
7
4
8
10
180°
120°
90°
60°
30°
Conduction angle
8EWF..S Series
TJ = 150 °C
RMS limit
8
6
Ø
0
18
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
10
14
2
6
14
26
16
12
84
180°
120°
90°
60°
30°
DC
Ø
Conduction period
8EWF..S Series
TJ = 150 °C
RMS limit
12
10
8
4
100
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
20
80
40
60
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = TJ max.
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20
0.01 0.1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0
40
60
120
101
80
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated VRRM reapplied
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 4Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
1000
10
1
1.5 3.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
4.01.0 2.5
0.5 2.0 3.0
8EWF..S Series
TJ = 25 °C
TJ = 150 °C
4.5
0.6
0 40 120 200
trr - Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
160
0.4
0
80
8EWF..S Series
TJ = 25 °C
IFM = 10 A
IFM = 1 A
IFM = 5 A
IFM = 2 A
IFM = 8 A
0.1
0.3
0.5
0
0 80 120 160 200
trr - Maximum Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
0.6
0.2
0.8
40
8EWF..S Series
TJ = 150 °C IFM = 10 A
IFM = 1 A
IFM = 5 A
IFM = 2 A
IFM = 8 A
0
0 80 120 200
Qrr - Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1.2
0.4
0.8
2.0
16040
8EWF..S Series
TJ = 25 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
1.6
0
40 200
Q
rr
- Maximum Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
3
4
5
80 120
8EWF..S Series
TJ = 150 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0 160
20
0
0 80 120 160 200
Irr - Maximum Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
8
16
4
12
40
8EWF..S Series
TJ = 25 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 5Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
25
10
0
0 80 200
Irr - Maximum Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
20
5
15
40 120 160
8EWF..S Series
TJ = 150 °C
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0.1
0.0001 0.001 0.01 0.1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal Impedance (°C/W)
1
10
1
Steady state value
(DC operation)
8EWF..S Series
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com Vishay Semiconductors
Revision: 17-Nov-11 6Document Number: 93377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8EWF10S-M3 75 3000 Antistatic plastic tubes
VS-8EWF10STR-M3 2000 2000 13" diameter reel
VS-8EWF10STRL-M3 3000 3000 13" diameter reel
VS-8EWF10STRR-M3 3000 3000 13" diameter reel
VS-8EWF12S-M3 75 3000 Antistatic plastic tubes
VS-8EWF12STR-M3 2000 2000 13" diameter reel
VS-8EWF12STRL-M3 3000 3000 13" diameter reel
VS-8EWF12STRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
1-Vishay Semiconductors product
2- Current rating (8 = 8 A)
3- Circuit configuration:
E = Single diode
4- Package:
W = D-PAK
5- Type of silicon:
F = Fast soft recovery rectifier
6- Voltage code x 100 = VRRM
7- S = Surface mountable
8- TR = Tape and reel
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
10 = 1000 V
12 = 1200 V
- Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
VS- 8 E W F 12 S TR -M3
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
