1. High current transfer ratio
2. Opaque type, mini-flat package
PC355NT (1-channel )
3. Subminirature type
(The volume is smaller than that of our
4. Isolation voltage between input and output
5. Recognized by UL (NO. E64380)
■Applications
■Package Specifications
mounting.
2. Programmable controllers
■Outline Dimensions
(CTR : MIN. 600% at I F= 1mA, VCE =2V
)
1. Hybrid substrates that require high density
(Unit : mm )
conventional DIP type by as far as 30%)
PC355NT Input side
diagram
Internal connection
355
Anode
C0.4
mark
6˚
PC355NT
34
21
12
34 1 Anode
2 Cathode
3 Emitter
4 Collector
■Features
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
“In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
High Sensitivity Photocoupler
Mini-Flat Package,
PC355NT
PC355NT
•••Viso : 3 750Vrms
4.4±0.2
2.54±0.25
0.4±0.1
3.6±0.3
2.6±0.2
0.1±0.1
5.3±0.3
0.2±0.05
7.0+0.2
-0.7
0.5+0.4
-0.2
Model No. Taping specifications
PC355NT Taping reel diameter 178mm (750pcs.)
*3 For 10 senconds
(Ta = 25˚C)
Parameter Symbol Rating Unit
Input
Forward current IF50 mA
*1Peak forward current IFM 1A
Reverse voltage VR6V
Power dissipation P 70 mW
Output
Collector-emitter voltage VCEO 35 V
Emitter-collector voltage 6 V
Collector current IC80 mA
Collector power dissipation PC150 mW
Total power dissipation 170 mW
*2 Isolation voltage V
Operating temperature ˚C
Storage temperature ˚C
*3 Soldering temperature 260 ˚C
VECO
Ptot
Topr
Tstg
Tsol
0.2mm or more
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Forward voltage VFIF= 20mA - 1.2 1.4 V
IRVR=4V - - 10 µA
Terminal capacitance Ct- 30 250 pF
Output Collector dark current ICEO VCE = 10V, I F=0 - - A
Collector-emitter breakdown voltage
BVCEO IC= 0.1mA, I F= 0 35 - - V
Emitter-collector breakdown voltage
BVECO IE=10µ
A, IF=0 6 - - V
Transfer-
charac-
teristics
Current transfer ratio CTR IF= 1mA, V CE = 2V 600 %
Collector-emitter saturation voltage
VCE(sat)IF= 20mA, I C= 1mA - 0.8 1.0 V
Isolation resistance RISO
5x10
10
1011 -Ω
Floating capacitance CfV= 0, f= 1MHz - 0.6 1.0 pF
Response time Rise time trVCE = 2V, I C= 2mA
RL= 100Ω- 60 300 µs
Fall time - 53 250 µs
(Ta= 25˚C)
- 30 to + 100
- 40 to + 125
■Absolute Maximum Ratings
■Electro-optical Characteristics
tf
10 -6
Soldering area
iso
*1 Pulse width<=100 µs, Duty ratio : 0.001
Reverse current V= 0, f= 1kHz
3 750
*2 40 to 60%RH, AC for 1 minute
DC500V, 40 to 60%RH
1 600 7 500
PC355NT
Vrms
Duty ratio
Diode power dissipation P (mW)
5
10
20
50
100
200
500
5252525
300
250
200
150
100
50
0
170
0 50 10025
100
80
60
40
20
00 50 55 100
70
0 25 50 75 100 125
70
60
50
40
30
20
10
0
00 25 50 75 100 125
200
150
100
50
Forward current I F (mA)
-30
Collector power dissipation P C (mW )
-30
Peak forward current I FM (mA)
10
-3
10
-2
10
-1
-30
Total power dissipation P tot (mW )
-30
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
Fig. 3 Collector Power Dissipation vs.
Ambient Temperature Fig. 4 Total Power Dissipation vs.
Ambient Temperature
Fig. 5 Peak Forward Current vs.
Duty Ratio
Fig. 1 Forward Current vs. Ambient
Temperature
Ambient temperature Ta (˚C)Ambient temperature T a (˚C)
Ambient temperature Ta (˚C)Ambient temperature Ta (˚C)
Fig. 6 Forward Current vs. Forward Voltage
Pulse width <=100
µ
s
1
Ta= 25˚C
10000
5000
2000
1000
PC355NT
50˚C 25˚C
0˚C
0
2
0.5 1.0 1.5 2.0 2.5 3.0 3.5
5
10
20
50
100
200
500
1
- 25˚C
Ta= 75˚C
Forward current I F (mA)
Forward voltage VF (V)
100
80
40
20
054321
0
60
1mA
2mA
5mA
100101
0.1
Current transfer ratio CTR (%)
0
100200
-30
1.6
1.0
0.6
40
060 8080
60
040
50
100
150
Relative current transfer ratio (%)
-30 0 20 100
0.2
0.4
0.8
1.2
1.4
5
5
5
5
5
5
806040200
-30 100 0.01 0.1 1 10
500
200
50
0.2
0.5
2
10
0.1
1
5
20
100
100
Forward current I F (mA)
Collector dark current I CEO (A)
10 -5
10 -6
10 -7
10 -8
10 -9
10 -10
10 -11
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Response time (µs)
Fig. 7 Current Transfer Ratio vs.
Forward Current
Fig. 9 Relative Current Transfer Ratio vs.
Ambient Temperature Fig.10 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.11 Collector Dark Current vs.
Ambient Temperature
Fig. 8 Collector Current vs. Collector-
emitter Voltage
Ambient temperature Ta (˚C)
Collector-emitter saturation voltage
VCE(sat) (V)
Ambient temperature Ta (˚C)
Ambient temperature T a (˚C)
Ta= 25˚C
VCE =2V
I
F
= 10mA
Ta= 25˚C
PC(MAX.)
VCE =2V
I
F= 1mA
IC= 1mA
IF= 20mA
VCE = 10V VCE =2V
I
C
= 2mA
Ta= 25˚C
ts
td
tf
tr
5000
4000
3000
2000
1000
PC355NT
Fig.12 Responce Time vs. Load Resistance
Load resistance R L (kΩ)
00.8 1.6 2.4 3.2 4.0
0
1.6
3.2
4.8
6.4
1mA
3mA
5mA
7mA
30mA
50mA
Forward current I F (mA)
10%
90%
Output
Input
Input Output
RL
VCC
RD
ts
td
trtf
Test Circuit For Response Time
■Temperature Profile of Soldering Reflow
(1) One time soldering reflow is recommended within the condition of temperature and time
profile shown below.
(2) When using another soldering method such as infrared ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
30 seconds
230˚C
200˚C
180˚C
25˚C
2 minutes 1.5 minutes 1 minute
1 minute
Fig.13 Collector-emitter Saturation Voltage
vs. Forward Current
Collector-emitter saturation voltage
VCE(sat) (V)
Ta= 25˚C
IC= 0.5mA
PC355NT
Please refer to the chapter “Precautions for Use.”
●
