THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
General Description
Features
Functional Diagram
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplier which operates between 5 and 6
GHz. The amplier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
Electrical Specications, TA = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 6 5.7 - 5.9 GHz
Gain 13 16 21 14 17 21 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 10 11 dB
Output Return Loss 8 9 dB
Output Power for 1 dB Compression (P1dB) 21 24 24 27 dBm
Saturated Output Power (Psat) 27 29 dBm
Output Third Order Intercept (IP3) 34 38 34 38 dBm
Noise Figure 6.0 6.0 dB
Supply Current (Icq) Vpd = 0V/5V 0.002 / 300 0.002 / 300 mA
Control Current (Ipd) Vpd = 5V 7 7 mA
Switching Speed tON, tOFF 35 35 ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-15
-10
-5
0
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Power Compression @ 5.8 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
14
15
16
17
18
19
20
21
22
23
24
22
23
24
25
26
27
28
29
30
31
32
4.75 5 5.25
Gain
P1dB
Psat
GAIN dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
3
6
9
12
15
18
21
24
27
30
33
0
35
70
105
140
175
210
245
280
315
350
2.5 3 3.5 4 4.5 5
Gain
P1dB
Psat
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (V)
-60
-50
-40
-30
-20
-10
0
4.5 5 5.5 6 6.5
Reverse Isolation
Power Down Isolation
ISOLATION (dB)
FREQUENCY (GHz)
14
19
24
29
34
39
44
4.5 5 5.5 6 6.5
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
0
6
12
18
24
30
36
42
0 2 4 6 8 10 12 14 16 18
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5V
Control Voltage (Vpd) +5.5V
RF Input Power (RFIN)(Vs = Vpd = +5V) +20 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C) 2.1 W
Thermal Resistance
(junction to ground paddle) 31 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85° C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC406MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H406
XXXX
HMC406MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H406
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1Vpd
Power Control Pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
2, 4, 7 GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
3RFIN This pin is AC coupled
and matched to 50 Ohms.
5, 6 RFOUT RF output and bias for the output stage. The power supply
for the output device needs to be supplied to these pins.
8Vcc
Power supply voltage for the rst amplier stage. An
external bypass capacitor of 330 pF is required. This
capacitor should be placed as close to the devices as
possible.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Application Circuit
Note 1: C3 should be located < 0.020” from Pin 8 (Vcc)
Note 2: C2 should be located < 0.020” from L1.
TL1 TL2 TL3
Impedance 50 ohm 50 ohm 50 ohm
Physical Length 0.0443” 0.2556” 0.1000”
Electrical Length @ 5.5 GHz 11.3° 65.2° 25.5°
Measurement Edge of package pin to
center of capacitor C5.
Center of capacitor C5
to center of bias line.
Center of bias line to
edge of capacitor C6.
PCB Material: 10 mil Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Evaluation PCB
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 104989 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2mm DC Header
C1 - C3 330 pF Capacitor, 0603 Pkg.
C4 2.2 µF Capacitor, Tantalum
C5 0.6 pF Capacitor, 0603 Pkg.
C6 1.6 pF Capacitor, 0603 Pkg.
C7 100 pF Capacitor, 0603 Pkg.
L1 3.9 nH Inductor, 0603 Pkg.
U1 HMC406MS8G(E) Amplier
PCB [2] 105021 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Notes:
