BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications * Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VCER Parameter Value Units : BD234 : BD236 : BD238 - 45 - 60 - 100 V V V Collector-Emitter Voltage : BD234 : BD236 : BD238 - 45 - 60 - 80 V V V Collector-Emitter Voltage : BD234 : BD236 : BD238 - 45 - 60 - 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -2 A ICP *Collector Current (Pulse) -6 A PC Collector Dissipation (TC=25C) 25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICBO Parameter * Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 Test Condition IC = - 100mA, IB = 0 Min. Typ. Max. - 45 - 60 - 80 Units V V V Collector Cut-off Current : BD234 : BD236 : BD238 VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 100V, IE = 0 - 100 - 100 - 100 A A A -1 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE * DC Current Gain VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A , IB = - 0.1A - 0.6 V VBE(on) * Base-Emitter ON Voltage VCE = - 2V, IC = - 1A - 1.3 V fT Current Gain Bandwidth Product VCE = - 10V, IC = -250mA 40 25 3 MHz * Pulse Test: PW=300s, duty Cycle=1.5% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1000 hFE, DC CURRENT GAIN VCE = -2V -100 -10 -1 -0.01 -0.1 -1 -10 IC = 10 IB V BE(sat) -1 V CE(sat) -0.1 -0.01 -0.1 -1 -10 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 40 10 s IC MAX. (Pulsed) s PC[W], POWER DISSIPATION 0 10 1m IC MAX. (Continuous) s DC BD236 -0.1 BD238 -1 BD234 IC[A], COLLECTOR CURRENT 35 30 25 20 15 10 5 0 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area (c)2000 Fairchild Semiconductor International -100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating Rev. A, February 2000 BD234/236/238 Typical Characteristics BD234/236/238 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E