Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology * 75 % lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time 10 s * Designed for moderate and high frequency applications: - SMPS and PFC up to 150 kHz - Inverter, Motor controls * NPT-Technology for 600V applications offers: - tighter parameter distribution - higher ruggedness, temperature stable behaviour - parallel switching capability VCE IC VCE(sat) 600 V 30 A 2.5 V Type SGP30N60 Tj Package Ordering Code 150 C TO-220AB Q67041-A4713-A2 SGB30N60 TO-263AB Q67041-A4713-A3 SGW30N60 TO-247AC Q67040-S4237 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A T C = 25 C 41 T C = 100 C 30 Pulsed collector current, tp limited by T jmax Gate-emitter voltage ICpuls 112 VGE 20 V Avalanche energy, single pulse EAS 165 mJ tsc 10 s Ptot 250 W -55...+150 C I C = 30 A, VCC = 50 V, R GE = 25 , start at T j = 25 C Short circuit withstand time 1) VGE = 15 V, VCC = 600 V, T j 150 C Power dissipation T C = 25 C Tj , Tstg Operating junction and storage temperature Soldering temperature, 1.6mm from case for 10s - 260 1) allowed number of short circuits: <1000; time between short circuits: >1s Semiconductor Group 1 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Thermal Resistance Symbol Parameter Values Unit min. typ. max. - - 0.5 TO-220AB - - 62 TO-247AC - - 40 - - 40 Characteristics Thermal resistance, junction - case RthJC Thermal resistance, junction - ambient RthJA SMD version, device on PCB: RthJA 1) K/W TO-263AB Electrical Characteristics, at T j =25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 600 - - VGE = 15 V, I C = 30 A, Tj = 25 C 1.6 2.1 2.5 VGE = 15 V, I C = 30 A, Tj = 150 C - 2.5 3 3 4 5 Static Characteristics V(BR)CES Collector-emitter breakdown voltage V VGE = 0 V, I C = 500 A VCE(sat) Collector-emitter saturation voltage Gate-emitter threshold voltage VGE(th) I C = 300 A, V CE = V GE Zero gate voltage collector current I CES A VCE = 600 V, VGE = 0 V, T j = 25 C - - 40 VCE = 600 V, VGE = 0 V, T j = 150 C - - 3000 - - 100 I GES Gate-emitter leakage current nA VGE = 25 V, VCE = 0 V 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for collector connection. PCB is vertical without blown air. Semiconductor Group 2 02 / 1999 SGP30N60, SGB30N60, SGW30N60 Electrical Characteristics, at Tj =25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. gfs - 20 - S Ciss - 1600 1920 pF Coss - 150 180 Crss - 92 110 Q Gate - 140 182 nC LE - 7 - nH - - - 300 - - - 112 Characteristics Transconductance VCE = 20 V, I C = 30 A Input capacitance VCE = 25 V, V GE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, V GE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, V GE = 0 V, f = 1 MHz Characteristics Gate charge VCC = 480 V, V GE = 15 V, I C = 30 A Internal emitter inductance measured 5mm from case Safe Operating Area Characteristics Short circuit collector current 1) A VCE 600 V, V GE = 15 V, t sc 10 s, T j 150 C Turn off safe operating area VCE 600 V, Tj 150 C 1) allowed number of short circuits: <1000; time between short circuits: >1s Semiconductor Group 3 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Switching Characteristics, Inductive Load (Diode:BUP603D), at Tj = 25 C Symbol Values Parameter Unit min. typ. max. t d(on) - 31 37 tr - 48 58 t d(off) - 291 350 tf - 58 70 Eon - 1.34 1.54 Eoff - 0.65 0.85 Ets - 1.99 2.39 Characteristics Turn-on delay time ns VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Rise time VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off delay time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Fall time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Turn-on energy 1) mJ VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off energy VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Total switching energy 1) VCC = 400 V, V GE = 0/+15 V, I C = 30 A, RG = 11 1) E on and E ts include BUP603D diode commutation losses. Semiconductor Group 4 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Switching Characteristics, Inductive Load (Diode: BUP603D), at T j = 150 C Symbol Parameter Values Unit min. typ. max. t d(on) - 30 36 tr - 46 55 t d(off) - 324 389 tf - 67 80 Eon - 1.81 2.08 Eoff - 0.92 1.2 Ets - 2.73 3.28 Characteristics Turn-on delay time ns VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Rise time VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off delay time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Fall time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Turn-on energy 1) mJ VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off energy VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Total switching energy 1) VCC = 400 V, V GE = 0/+15 V, I C = 30 A, RG = 11 1) E on and E ts include BUP603D diode commutation losses. Semiconductor Group 5 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Typ. collector current Safe operating area IC = f (f) IC = f (VCE ) parameter: D = 0.5, Tj 150 C parameter: D = 0, TC = 25C, Tj 150C 10 3 130 A A TC = 80 C t p=5s 110 10 100 2 15s TC = 110 C 90 50s IC IC 80 TC = 80 C 10 1 200s 70 1ms 60 50 10 0 TC = 110 C DC 40 30 10 -1 20 10 - - - square wave peak current triangle wave peak current 0 1 10 10 2 10 3 10 4 10 5 10 -2 0 10 Hz 10 6 10 1 10 2 10 f 3 V 10 4 VCE Power dissipation Collector current Ptot = f (TC) IC = f (TC) parameter: Tj 150 C parameter: VGE 15 V , Tj 150 C SGP30N60 280 60 W A 240 50 220 45 Limited by bond wire. 40 180 IC Ptot 200 160 140 35 30 120 25 100 20 80 60 15 40 10 20 5 0 0 20 40 60 80 100 120 C 0 0 160 TC Semiconductor Group 20 40 60 80 100 120 C 160 TC 6 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 150 C 100 100 A A 80 80 60 50 20V 15V 13V 11V 9V 7V 5V 70 IC IC 70 60 50 40 40 30 30 20 20 10 10 0 0 1 2 V 3 0 0 5 20V 15V 13V 11V 9V 7V 5V 1 2 V 3 VCE 5 VCE Typ. transfer characteristics Gate-emitter threshold voltage IC = f (VGE) VGE(th) = f (Tj ) parameter: tp = 80 s, VCE = 10 V parameter: IC = 0.3 mA 60 6.0 A V 50 25 C 5.0 VGE(th) 45 IC 40 35 30 4.5 max. 4.0 25 3.5 20 typ. 15 3.0 10 2.5 min. 5 0 0 2 4 6 V 2.0 -60 10 VGE Semiconductor Group -20 20 60 100 C 160 Tj 7 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Typ. switching time Typ. switching time t = f (I C) , inductive load, Tj = 150C t = f (RG) , inductive load, Tj = 150C par.: V CE = 400 V, V GE = 0/+15 V, R G = 11 par.: VCE = 400 V, VGE = 0/+15 V, IC = 30 A 10 3 10 3 t d(off) td(off) t ns t ns 10 2 10 2 tf tf tr t d(on) tr td(on) 10 1 0 10 20 30 40 50 A 10 1 0 70 10 20 IC 40 RG Typ. switching time Typ. collector-emitter saturation voltage t = f (Tj) , inductive load , V CE = 400 V VCEsat = f (Tj ) V GE = 0/+15 V, I C = 30 A, RG = 11 parameter: VGE = 15 V 10 3 4.0 I C = 60 A V VCE(sat) ns t td(off) 10 2 3.0 I C = 30 A 2.5 tf tr 2.0 td(on) 1.5 10 1 0 20 40 Semiconductor Group 60 80 100 120 C Tj 1.0 -60 160 -20 20 60 100 C 160 Tj 8 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Typ. switching losses Typ. switching losses E = f (I C) , inductive load, Tj = 150C E = f (RG ) , inductive load, Tj = 150C par.: V CE = 400 V, V GE = 0/+15V, R G = 11 par.: VCE = 400 V, VGE = 0/+15 V, IC = 30 A 8 mWs 5.0 *) E and E include BUP603D on ts diode commutation losses. *) E mWs on and Ets include BUP603D diode commutation losses. Ets * 4.0 6 3.5 Eon* E E 5 E ts* 3.0 2.5 4 3 Eoff 2.0 E on* 1.5 E off 2 1.0 1 0 0 0.5 10 20 30 40 50 A 0.0 0 70 10 20 IC RG Typ. switching losses Transient thermal impedance E = f (T j) , inductive load, VCE = 400 V, ZthJC = f(tp ) parameter: D = tp / T V GE = 0/+15 V, I C = 30 A, RG = 11 3.5 40 10 1 *) E and E include BUP603D on ts diode commutation losses. K/W mWs 10 0 2.0 Z thJC E 2.5 Ets * 1.5 10 -1 D=0.5 0.2 0.1 0.05 0.02 0.01 10 -2 Eon* 1.0 10 -3 0.5 Eoff 0.0 0 20 40 60 80 100 120 C 10 -4 -7 10 160 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Tj Semiconductor Group single pulse 9 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Typ. gate charge Typ. capacitances VGE = f (Q Gate) C = f (VCE ) parameter: IC = 30 A parameter: VGE = 0 V, f = 1 MHz 10 4 25 pF 120 V V 480 V 10 3 15 C VGE Ciss Coss 10 10 2 Crss 5 0 0 10 1 0 20 40 60 80 100 120 140 160 180 nC 220 5 10 15 20 25 V 30 QGate 40 VCE Short circuit withstand time Typ. short circuit current tsc = f (V GE) ICsc = f (VGE ) par.: V CE = 600 V, start at T j = 25 C par.: VCE 600 V, TC = 25 C, Tj 150 C 25 500 A s 400 I Csc t sc 350 15 300 250 10 200 150 5 100 50 0 10 11 12 13 V 0 10 15 VGE Semiconductor Group 11 12 13 14 15 16 17 18 V 20 VGE 10 02 / 1999 SGP30N60, SGB30N60, SGW30N60 TO-220AB symbol A B C D E F G H K L M N P T dimensions [mm] min max 9.70 10.30 14.88 15.95 0.65 0.86 3.55 3.89 2.60 3.00 6.00 6.80 13.00 14.00 4.35 4.75 0.38 0.65 0.95 1.32 2.54 typ. 4.30 4.50 1.17 1.40 2.30 2.72 TO-263AB symbol A B C D E F G H K L M N P Q R S T U V W X Y Z Semiconductor Group 11 dimensions [mm] min max 9.80 10.20 0.70 1.30 1.00 1.60 1.03 1.07 2.54 typ. 0.65 0.85 5.08 typ. 4.30 4.50 1.17 1.37 9.05 9.45 2.30 2.50 15 typ. 0.00 0.20 4.20 5.20 8 max 2.40 3.00 0.40 0.60 10.80 1.15 6.23 4.60 9.40 16.15 02 / 1999 SGP30N60, SGB30N60, SGW30N60 Edition 02 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. 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Semiconductor Group 12 02 / 1999