Semiconductor Group 02 / 19991
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Fast S-IGBT in NPT-Technology
• 75 % lower
E
off compared to previous generation
combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 kHz
- Inverter, Motor controls
• NPT-Technology for 600V applications offers:
- tighter parameter distribution
- higher ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
V
CE(sat) Package Ordering Code
T
j
SGP30N60
SGB30N60
SGW30N60
600 V 30 A 2.5 V 150 °C TO-220AB
TO-263AB
TO-247AC
Q67041-A4713-A2
Q67041-A4713-A3
Q67040-S4237
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE 600 V
DC collector current
T
C = 25 °C
T
C = 100 °C
I
C
41
30
A
Pulsed collector current,
t
p limited by
T
jmax
I
Cpuls 112
Gate-emitter voltage
V
GE ±20 V
Avalanche energy, single pulse
I
C = 30 A,
V
CC = 50 V,
R
GE = 25 Ω,
start at
T
j = 25 °C
E
AS 165 mJ
Short circuit withstand time 1)
V
GE = 15 V,
V
CC = 600 V,
T
j ≤ 150 °C
t
sc 10 µs
Power dissipation
T
C = 25 °C
P
tot 250 W
Operating junction and storage temperature
T
j ,
T
stg -55...+150 °C
Soldering temperature, 1.6mm from case for 10s - 260
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group 02 / 19992
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Thermal Resistance
Parameter ValuesSymbol Unit
max.typ.min.
Characteristics
Thermal resistance, junction - case
R
thJC - 0.5- K/W
Thermal resistance, junction - ambient
TO-220AB
TO-247AC
R
thJA
-
-
62
40
-
-
SMD version, device on PCB: 1)
TO-263AB
R
thJA - - 40
Electrical Characteristics, at
T
j =25 °C, unless otherwise specified
Parameter Symbol UnitValues
min. max.typ.
Static Characteristics
V
(BR)CES 600 - -Collector-emitter breakdown voltage
V
GE = 0 V,
I
C = 500 µA V
V
CE(sat)
1.6
-
2.5
3
2.1
2.5
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 30 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 30 A,
T
j = 150 °C
V
GE(th) 3 54Gate-emitter threshold voltage
I
C = 300 µA,
V
CE =
V
GE
I
CES
-
-
-
-
Zero gate voltage collector current
V
CE = 600 V,
V
GE = 0 V,
T
j = 25 °C
V
CE = 600 V,
V
GE = 0 V,
T
j = 150 °C
µA
40
3000
I
GES - - 100 nAGate-emitter leakage current
V
GE = 25 V,
V
CE = 0 V
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick)
copper area for collector connection. PCB is vertical without blown air.
Semiconductor Group 02 / 19993
SGP30N60, SGB30N60, SGW30N60
Electrical Characteristics, at
T
j =25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Transconductance
V
CE = 20 V,
I
C = 30 A
g
fs - 20 - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 1600 1920 pF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 150 180
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz 92 110-
C
rss
Characteristics
Gate charge
V
CC = 480 V,
V
GE = 15 V,
I
C = 30 A
Q
Gate - 140 182 nC
Internal emitter inductance
measured 5mm from case
L
E- 7 - nH
Safe Operating Area Characteristics
Short circuit collector current 1)
V
CE ≤ 600 V,
V
GE = 15 V,
t
sc ≤ 10 µs,
T
j ≤ 150 °C
- - - 300 A
Turn off safe operating area
V
CE ≤ 600 V,
T
j ≤ 150 °C - - - 112
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group 02 / 19994
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Switching Characteristics, Inductive Load (Diode:BUP603D), at
T
j = 25 °C
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Turn-on delay time
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
t
d(on) - 31 37 ns
Rise time
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
t
r- 48 58
Turn-off delay time
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
t
d(off) - 291 350
Fall time
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
t
f- 58 70
Turn-on energy 1)
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
E
on - 1.34 1.54 mJ
Turn-off energy
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
E
off - 0.65 0.85
Total switching energy 1)
V
CC = 400 V,
V
GE = 0/+15 V,
I
C = 30 A,
R
G = 11 Ω
E
ts - 1.99 2.39
1)
E
on and
E
ts include BUP603D diode commutation losses.
Semiconductor Group 02 / 19995
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Switching Characteristics, Inductive Load (Diode: BUP603D), at
T
j = 150 °C
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Turn-on delay time
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
t
d(on) - 30 36 ns
Rise time
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
t
r- 46 55
Turn-off delay time
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
t
d(off) - 324 389
Fall time
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
t
f- 67 80
Turn-on energy 1)
V
CC = 400 V,
V
GE = 15 V,
I
C = 30 A,
R
Gon = 11 Ω
E
on - 1.81 2.08 mJ
Turn-off energy
V
CC = 400 V,
V
GE = 0 V,
I
C = 30 A,
R
Goff = 11 Ω
E
off - 0.92 1.2
Total switching energy 1)
V
CC = 400 V,
V
GE = 0/+15 V,
I
C = 30 A,
R
G = 11 Ω
E
ts - 2.73 3.28
1)
E
on and
E
ts include BUP603D diode commutation losses.
Semiconductor Group 02 / 19996
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Typ. collector current
I
C =
f
(
f
)
parameter:
D
= 0.5,
T
j ≤ 150 °C
10 1 10 2 10 3 10 4 10 5 10 6
Hz
f
0
10
20
30
40
50
60
70
80
90
100
110
A
130
I
C
- - - square wave peak current
triangle wave peak current
T
C = 80 °C
T
C = 80 °C
T
C = 110 °C
T
C = 110 °C
Safe operating area
I
C =
f
(
V
CE)
parameter:
D
= 0,
T
C = 25°C,
T
j ≤ 150°C
10 0 10 1 10 2 10 3 10 4
V
V
CE
-2
10
-1
10
0
10
1
10
2
10
3
10
A
I
C
DC
1ms
200µs
50µs
15µs
t
p=5µs
Power dissipation
P
tot =
f
(
T
C)
parameter:
T
j ≤ 150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
20
40
60
80
100
120
140
160
180
200
220
240
W
280
SGP30N60
P
tot
Collector current
I
C =
f
(
T
C)
parameter:
V
GE ≥ 15 V ,
T
j ≤ 150 °C
0 20 40 60 80 100 120 °C 160
T
C
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
Limited by bond wire.
Semiconductor Group 02 / 19997
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 25 °C
0123V5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
20V
15V
13V
11V
9V
7V
5V
Typ. output characteristics
I
C
=
f
(
V
CE)
parameter:
t
p = 80 µs,
T
j = 150 °C
0123V5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
20V
15V
13V
11V
9V
7V
5V
Typ. transfer characteristics
I
C =
f
(
V
GE)
parameter:
t
p = 80 µs,
V
CE = 10 V
0246V10
V
GE
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
25 C
Gate-emitter threshold voltage
V
GE(th) =
f
(
T
j)
parameter:
I
C = 0.3 mA
-60 -20 20 60 100 °C 160
T
j
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
6.0
V
GE(th)
min.
typ.
max.
Semiconductor Group 02 / 19998
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Typ. switching time
t
=
f
(
I
C)
,
inductive load,
T
j = 150°C
par.:
V
CE = 400 V,
V
GE = 0/+15 V,
R
G = 11 Ω
0 10 20 30 40 50 A70
I
C
1
10
2
10
3
10
ns
t
t
d(on)
t
r
t
d(off)
t
f
Typ. switching time
t
=
f
(
R
G)
,
inductive load,
T
j = 150°C
par.:
V
CE = 400 V,
V
GE = 0/+15 V,
I
C = 30 A
0 10 20 Ω40
R
G
1
10
2
10
3
10
ns
t
t
d(on)
t
r
t
d(off)
t
f
Typ. switching time
t
=
f
(
T
j)
,
inductive load ,
V
CE = 400 V
V
GE = 0/+15 V,
I
C = 30 A,
R
G = 11 Ω
0 20 40 60 80 100 120 °C 160
T
j
1
10
2
10
3
10
ns
t
t
d(on)
t
r
t
d(off)
t
f
Typ. collector-emitter saturation voltage
V
CEsat
=
f
(
T
j)
parameter:
V
GE = 15 V
-60 -20 20 60 100 °C 160
T
j
1.0
1.5
2.0
2.5
3.0
V
4.0
V
CE(sat)
I
C = 30 A
I
C = 60 A
Semiconductor Group 02 / 19999
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Typ. switching losses
E = f
(
I
C)
,
inductive load,
T
j = 150°C
par.:
V
CE = 400 V,
V
GE = 0/+15V,
R
G = 11 Ω
0 10 20 30 40 50 A70
I
C
0
1
2
3
4
5
6
mWs
8
E
E
on*
E
off
E
ts*
*)
E
on and
E
ts include BUP603D
diode commutation losses.
Typ. switching losses
E = f
(
R
G)
,
inductive load,
T
j = 150°C
par.:
V
CE = 400 V,
V
GE = 0/+15 V,
I
C = 30 A
0 10 20 Ω40
R
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
mWs
5.0
E
E
on*
E
off
E
ts*
*)
E
on and
E
ts include BUP603D
diode commutation losses.
Typ. switching losses
E = f
(
T
j)
,
inductive load,
V
CE = 400 V,
V
GE = 0/+15 V,
I
C = 30 A,
R
G = 11 Ω
0 20 40 60 80 100 120 °C 160
T
j
0.0
0.5
1.0
1.5
2.0
2.5
mWs
3.5
E
E
on*
E
off
E
ts*
*)
E
on and
E
ts include BUP603D
diode commutation losses.
Transient thermal impedance
Z
thJC = f(
t
p)
parameter:
D
=
t
p
/ T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
single pulse
D=0.5
0.2
0.1
0.05
0.02
0.01
Semiconductor Group 02 / 199910
SGP30N60, SGB30N60, SGW30N60
Preliminary data
Typ. capacitances
C
=
f
(
V
CE)
parameter:
V
GE = 0 V,
f
= 1 MHz
0 5 10 15 20 25 30 V40
V
CE
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Typ. gate charge
V
GE =
f
(
Q
Gate)
parameter:
I
C = 30 A
0 20 40 60 80 100 120 140 160 180nC 220
Q
Gate
0
5
10
15
V
25
V
GE
120 V 480 V
Typ. short circuit current
I
Csc =
f
(
V
GE)
par.:
V
CE ≤ 600 V,
T
C = 25 °C,
T
j ≤ 150 °C
10 11 12 13 14 15 16 17 18 V20
V
GE
0
50
100
150
200
250
300
350
400
A
500
I
Csc
Short circuit withstand time
t
sc =
f
(
V
GE)
par.:
V
CE = 600 V, start at
T
j = 25 °C
10 11 12 13 V15
V
GE
0
5
10
15
µs
25
t
sc
Semiconductor Group 02 / 199911
SGP30N60, SGB30N60, SGW30N60
TO-220AB
dimensions
[mm]
symbol min max
A9.7010.30
B 14.88 15.95
C 0.65 0.86
D 3.55 3.89
E 2.60 3.00
F 6.00 6.80
G 13.00 14.00
H 4.35 4.75
K 0.38 0.65
L 0.95 1.32
M
N 4.30 4.50
P 1.17 1.40
T 2.30 2.72
2.54 t
y
p.
TO-263AB
dimensions
[mm]
symbol min max
A 9.80 10.20
B 0.70 1.30
C 1.00 1.60
D 1.03 1.07
E
F 0.65 0.85
G
H 4.30 4.50
K 1.17 1.37
L 9.05 9.45
M 2.30 2.50
N
P 0.00 0.20
Q 4.20 5.20
R
S 2.40 3.00
T 0.40 0.60
U
V
W
X
Y
Z1
6
.1
5
15 t
y
p.
6.23
1.15
10.80
8° max
2.54 t
y
p.
5.08 t
y
p.
4.60
9.40
Semiconductor Group 02 / 199912
SGP30N60, SGB30N60, SGW30N60
Edition 02 / 1999
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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