Infineon technologies SIPMOS Power Transistor *N channel Enhancement mode BUZ 21 SMD + Avalanche-rated ; ZKtab) Pin 1 Pin 2 Pin 3 G D S Type Vos Ip Rps(on) Package Ordering Code BUZ 21 SMD 100 V 21A 0.085 Q DPAK Q67042-S4132 Maximum Ratings Parameter Symbol Values Unit Continuous drain current lb A To = 25C 21 Pulsed drain current IDpuls To = 25C 84 Avalanche current, limited by Timax lar 21 Avalanche energy,periodic limited by Timax Ear 11 mJ Avalanche energy, single pulse Eas Ip = 21 A, Vop = 26 V, Reg = 25 L = 340 pH, 7) = 25C 100 Gate source voltage Ves + 20 Vv Power dissipation Prot Ww To = 25C 75 Operating temperature T -55 ... + 150 Cc Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case Rthuc < 1.67 K/W Thermal resistance, chip to ambient RthJa 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150/56 Data Sheet 05.04Infineon BUZ 21 SMD ENERERES ot Electrical Characteristics, at 7; = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VBR)Dss Vv Ves = 0 V, Ip = 0.25 mA, Tj = 25 C 100 - - Gate threshold voltage Vesith) Ves=Vps, lb =1mA 2.1 3 4 Zero gate voltage drain current loss pA Vps = 100 V, Veg = OV, T= 25C - 0.1 1 Vos = 100 V, Veg = OV, 7) = 125 C - 10 100 Gate-source leakage current less nA Ves = 20 V, Vos = OV - 10 100 Drain-Source on-resistance Rosion) Q Ves = 10V, Ip=13A - 0.065 0.085 Data Sheet 2 05.04Infineon techno ogies eg BUZ 21 SMD Electrical Characteristics, at 7; = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance Vps2 2 + Ip * Ros(on)max, /p = 13 A fs 11 Input capacitance Ves = 0 V, Vos = 25 V, f= 1 MHz Ciss 1000 1300 Output capacitance Ves =0 V, Vos = 25 Vv, f= 1 MHz Coss 300 530 Reverse transfer capacitance Ves =0 Vv, Vos =25 V, f=1MHz 150 240 pF Turn-on delay time Vop = 30 V, Ves= 10V, ID=3A Regs = 502 25 40 Rise time Vop = 30 V, Veg =10V, Ip=3A Res =500 50 75 Turn-off delay time Vop = 30 V, Ves= 10 V, IDp=3A Reg = 50 Q ld(off) 160 210 Fall time Vop = 30 V, Ves = 10V, IDp=3A Res = 50 Q 80 110 ns Data Sheet 05.04techno mS tt Electrical Characteristics, at 7; = 25C, unless otherwise specified BUZ 21 SMD Parameter Symbol Values Unit typ. max. Reverse Diode Inverse diode continuous forward current Te = 25 Cc 21 Inverse diode direct current,pulsed To = 25C Inverse diode forward voltage Vas = OV, Ir =42A 1.3 AF Reverse recovery time Vp = 30 V, Ip=lg dif/dt= 100 A/us 150 ns Reverse recovery charge Ve =30V, Ip=ls, dig/dt= 100 A/us 0.48 pC Data Sheet 05.04Infineon technologies BUZ 21 SMD Power dissipation Prot = (Tc) 40 30 20 10 0 o 20 40 60 80 100 120 C_ 160 e T. Safe operating area lp = f(Vps) parameter: D= 0.01, Tg = 25C 103 A ly 102 A 101 10 1071 10 Data Sheet Drain current Ip = f(Tc) parameter: Vgg 210 V 22 A 18 'p t 16 14 12 10 8 6 4 Oo 20 40 6O 80 100 120 C 160 eT Transient thermal impedance Zh sc = I(t) parameter: D = th/ ic 101 KIW Zinc 10 10-1 102 10 0 10 10 10 10 10 10 10s 10 rt 05.04Infineon techno MEISE ott Typ. output characteristics lp = (Vp) parameter: f, = 80 us 50 P= A | 25 ~ 20 a 15 b d e f 9 h i 1 k | 10 0 1 2 3 4 5 6 7 V 9 > Vos Typ. transfer characteristics /p = f( Vgs) parameter: t, = 80 ps Vos22 x Ip x Rosion)max 60 A im 7 fe 45 / 40 a ae = os 35 ; / 25 / 20 | / 15 10 Data Sheet BUZ 21 SMD Typ. drain-source on-resistance Ros (on) = S(/p) parameter: f, = 80 us, 7; = 25 C 0.26 Q 0.22 Ros (onD.20 1 0.18 0.16 0.14 0.12 0.10)" 0.08 0.06 | Ves [V] = a b c d e t 9 h i j 0 65 60 65 70 75 80 90 10.0 200 0.04 0.02 0.00 0 5 10 15 20 25 30 35 A 45 |, Typ. forward transconductance g,, = f (/p) parameter: t, = 80 us, Vps22 x Ip x Ros(on)max 20 st FH 16 14 a 12 7 10 ie 8 / # & __] 0 10 20 30 40 A 55 r | 05.04Infineon techno ee Drain-source on-resistance Rps (ony = S(7}) parameter: Ip = 13 A, Veg = 10 V 0.28 0 0.24 Ros (onf0.22 } 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06/-= 0.04 0.02 0.00 -60 -20 20 60 100 C 160 Typ. capacitances C= f(Vps) parameter: Veg = OV, f= 1MHz 101 nF c I 10 107 102 Data Sheet BUZ 21 SMD Gate threshold voltage Ves (th) = /(7}) parameter: Ves = Vos, Ip = 1MA 46 v 40 GSith) 3.6 I 3.2 2.8 2.4 2.0 1.6 Te: 0.8 04 0.0 -60 -20 20 60 100 C 160 Forward characteristics of reverse diode le = f(Vgp) parameter: 7, f, = 80 us 102 A I ; 10 T,= 25C typ T, = 150C typ 25 C (98%) ) qj T, = 150 C (98%) 1071 00 O04 O08 12 16 20 24 V 30 - Vsp 05.04C Infineon techno ee Avalanche energy Ens = /(7)) parameter: Ip = 21 A, Vop = 25 V Reg = 25 2, L = 340 pH 110 my 4 80 \ | 70 \ 60 \ 40 \ 20 ae 10 MS 0 hss 20 40 60 80 100 120 C 160 Drain-source breakdown voltage Veryoss = (7) 120 116 Vierosd 14 112 t 110 108 106 104 102 100 88 -60 -20 20 60 100 C 160 Data Sheet BUZ 21 SMD Typ. gate charge Ves = S(Qcate) 0 10 20 30 40 50 nc 70 Wate 05.04