AON7752 30V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Integrated Schottky Diode (SRFET) * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Application ID (at VGS=10V) 30V 16A RDS(ON) (at VGS=10V) < 8.2m RDS(ON) (at VGS = 4.5V) < 14.5m 100% UIS Tested 100% Rg Tested * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP Bottom View Top View VDS D Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Pin 1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C V 12 A 15 IDSM TA=70C 20 64 IDM TA=25C Continuous Drain Current Units V 16 ID TC=100C Maximum 30 A 12 IAS 22 A Avalanche energy L=0.05mH C EAS 12 mJ VDS Spike VSPIKE 36 V 100ns TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C PD TA=25C Rev 0 : April 2012 3.1 Steady-State Steady-State RJA RJC W 2 TJ, TSTG Symbol t 10s W 8.3 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 20 -55 to 150 Typ 30 60 5 www.aosmd.com C Max 40 75 6 Units C/W C/W C/W Page 1 of 6 AON7752 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGSID=250A RDS(ON) Static Drain-Source On-Resistance 100 1.5 VGS=10V, ID=16A TJ=125C VGS=4.5V, ID=10A gFS Forward Transconductance VSD Diode Forward Voltage IS=0.2A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=16A 1 Units V 0.5 TJ=55C VDS=5V, ID=16A Max 30 VDS=30V, VGS=0V IDSS Coss Typ 2 100 nA 2.5 V 6.8 8.2 9.8 12 11.6 14.5 62 0.45 mA m m S 0.65 V 16 A 605 pF 275 pF 36.5 pF 2 3 11 15 nC 5.5 8 nC 2 nC Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 2.5 ns 17 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time Qrr IF=16A, dI/dt=500A/s 11.5 Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/s 12.5 ns nC VGS=10V, VDS=15V, RL=0.9, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : April 2012 www.aosmd.com Page 2 of 6 AON7752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V 4.5V 5V VDS=5V 60 60 4V ID(A) ID (A) 7V 40 40 3.5V 125C 20 20 25C VGS=3.0V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.6 14 Normalized On-Resistance VGS=4.5V RDS(ON) (m ) 12 10 8 6 VGS=10V 4 2 VGS=10V ID=16A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=16A 1.0E+00 20 125C 40 IS (A) RDS(ON) (m ) 1.0E-01 15 125C 1.0E-02 10 25C 1.0E-03 5 25C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : April 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=16A 800 Ciss Capacitance (pF) VGS (Volts) 8 6 4 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 200 160 10s 100.0 RDS(ON) 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 TJ(Max)=150C TC=25C 10s Power (W) 10.0 Crss 0 1000.0 ID (Amps) 600 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=6C/W PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : April 2012 www.aosmd.com Page 4 of 6 AON7752 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 Current rating ID(A) Power Dissipation (W) 25 15 10 5 0 10 5 0 0 25 50 75 100 125 TCASE (C) Figure 12: Power De-rating (Note F) 150 100.0 0 25 50 75 100 125 TCASE (C) Figure 13: Current De-rating (Note F) 150 10000 TA=25C TA=25C TA=100C 10.0 Power (W) IAR (A) Peak Avalanche Current 15 TA=150C 1000 100 10 TA=125C 1 1.0 1 10 100 1000 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) Time in avalanche, tA ( s) Figure 14: Single Pulse Avalanche capability (Note C) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : April 2012 www.aosmd.com Page 5 of 6 AON7752 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : April 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6