Philips Semiconductors ee ener cere eee eee scene creer cece eee eee ees Schottky barrier diodes Product specification BAS81; BAS82; BAS&3 FEATURES package Low diode capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Low forward voltage High breakdown voltage Guard ring protected Hermetically-sealed small SMD DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for automatic placement and as such it can withstand immersion soldering. k OL Cathode indicated by a grey band. | a MAM190 e Blocking diodes. Fig.1 Simplified outline (SOD80C), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage BAS81 - 40 Vv BAS82 - 50 Vv BAS83 - 60 V IF continuous forward current - 30 mA lem repetitive peak forward current tps15;6<0.5 - 150 mA lesm non-repetitive peak forward current t=1s 500 mA Tsstg storage temperature 65 +150 C Tj junction temperature - 125 C 1996 Sep 30 2-29Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Ve forward voltage see Fig.2 Ip =0.1mA 330 mV lp=1mMA 410 mv p= 15 mA 1 Vv In reverse current Vr = Vrmax; See Fig.3 200 nA Cy diode capacitance f= 1 MHz; Vp = 1 V; see Fig.4 1.6 pF Note 1. Pulsed test: tp = 300 us; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pith j-a thermal! resistance from junction to ambient note 1 320 K/AW Note 1. Refer to SOD80 standard mounting conditions. 1996 Sep 30Philips Semiconductors | Schottky barrier diodes GRAPHICAL DATA - Product specification BAS81; BAS82; BAS83 1071 - 0 0.2 0.4 06 0.8 1.0 a) (1) Tamp = 85 C. (2) Tamb = 25C. (3) Tams = -40C. Fig.2 Forward current as a function of forward . voltage; typical values. (1), Tamp = 85 C. (2) Tam = 25C. (3) Temp = 40 C. Fig.3 Reverse current as a function of reverse voltage; typical values. 2.0 (pF) 15 1.0 0.5 60 Vat) f=1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 30