2C3M0075120J Rev. -, 07-2017
Electrical Characteristics (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=100μA
VGS(th) Gate Threshold Voltage 1.7 2.5 4.0 VVDS = VGS, ID = 5 mA Fig. 11
2.0 VVDS = VGS, ID = 5 mA, TJ = 150ºC
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 75 90 mΩVGS = 15 V, ID = 20 A Fig. 4,
5, 6
100 VGS = 15 V, ID = 20A, TJ = 150ºC
gfs Transconductance 9.0 SVDS= 20 V, IDS= 20 A Fig. 7
8.3 VDS= 20 V, IDS= 20 A, TJ = 150ºC
Ciss Input Capacitance 1350
pF VGS = 0 V, VDS = 1000 V
f = 1 MHz
VAC = 25 mV
Fig. 17,
18
Coss Output Capacitance 58
Crss Reverse Transfer Capacitance 3
Eoss Coss Stored Energy 33 μJ Fig. 16
EON Turn-On Switching Energy (Body Diode FWD) 230
μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) =0Ω,L=156μH,TJ = 150ºC
Fig. 26,
29
EOFF Turn-Off Switching Energy (Body Diode FWD) 85
td(on) Turn-On Delay Time 17
ns
VDD = 800 V, VGS = -4 V/15 V
ID = 20 A, RG(ext)=0Ω,
Timing relative to VDS
Inductive load
Fig. 27,
28, 29
trRise Time 9
td(off) Turn-Off Delay Time 29
tfFall Time 10
RG(int) Internal Gate Resistance 10.5 Ωf = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 14
nC
VDS = 800 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Qgd Gate to Drain Charge 21
QgTotal Gate Charge 51
Reverse Diode Characteristics (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage
4.5 V VGS = -4 V, ISD = 10 A Fig. 8,
9, 10
4.0 V VGS = -4 V, ISD = 10 A, TJ = 150 °C
ISContinuous Diode Forward Current 22.4 A VGS = -4 V Note 1
IS, pulse Diode pulse Current 80 A VGS = -4 V, pulse width tP limited by Tjmax Note 1
trr Reverse Recover time 18 ns
VGS = -4 V, ISD = 20 A, VR = 800 V
dif/dt = 3600 A/µs, TJ = 150 °C
Note 1,
Fig. 29
Qrr Reverse Recovery Charge 220 nC
Irrm Peak Reverse Recovery Current 19 A
Thermal Characteristics
Symbol Parameter Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.1 °C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40