MC14553BCP - ON SEMICONDUCTOR

August, 2009 − Rev. 6

1Publication Order Number:

BAV70LT1/D

BAV70LT1G

Dual Switching Diode

Common Cathode

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (EACH DIODE)

Rating Symbol Value Unit

Reverse Voltage VR70 V

Forward Current IF200 mA

Peak Forward Surge Current IFM(surge) 500 mA

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1)

TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Total Device Dissipation

Alumina Substrate,

(Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

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MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

A4 M G

SOT−23 (TO−236)

CASE 318

STYLE 9

BAV70LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BAV70LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

CATHODE

ANODE

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

A4 = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

BAV70LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic Symbol Min Max Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR) 70 −V

Reverse Voltage Leakage Current (Note 3)

(VR = 25 V, TJ = 150°C)

(VR = 70 V)

(VR = 70 V, TJ = 150°C)

−

2.5

100

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

CD−1.5 pF

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

−

715

855

1000

1250

Reverse Recovery Time RL = 100 W

(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)

trr −6.0 ns

3. For each individual diode while second diode is unbiased.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 W

0.1 mF

D.U.T.

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAV70LT1G

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, FORWARD VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

Figure 2. Forward Voltage Figure 3. Leakage Current

Figure 4. Capacitance

Curves Applicable to Each Anode

0.01

0.1

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TA = 85°C

TA = 55°C

TA = 25°C

TA = −40°C

TA = −55°C

TA = 150°C

, FORWARD CURRENT (mA)

0.001

0.01

0.1

1.0

0 10203040506070

, REVERSE VOLTAGE (V)

IR, REVERSE CURRENT (mA)

TA = 85°C

TA = 55°C

TA = 125°CTA = 125°C

TA = 150°C

TA = 25°C

0.48

0.5

0.52

0.54

0.56

0.58

0.6

012345678

Cd, DIODE CAPACITANCE (pF)

BAV70LT1G

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PACKAGE DIMENSIONS

SOT−23−3 (TO−236)

CASE 318−08

ISSUE AN

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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BAV70LT1/D

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