4.78.6100B 2N 1613 THE 2N1613 AND 2N1711 ARE NPN SILICON? PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR SWITCHING AND D.C. AMPLIFIERS. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Hnitter Voltage(RpE<10.2 ) Emitter-Base Voltage Total Power Bissipation (T,=25C TC=25C Te=100C ) Operating Junction Temperature Storage Temperature Range VCBO VCER VEBO Ptot Tj - Tstg ~ECTRICAL CHARACTERISTICS: (Ta=95C unless otherwise noted) 2N 1711 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-39 ie CEB T5V 50V Vv 0.8W. aw 16: = 9gGee" -65 to 300C 2N1613 2N1711 PARAMETER SYMBOL MIN MAX | MIN MAX UNIT; TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 75 75 v Ic=0.lmwA Ip-0 Collector-Emitter Breakdown Voltage | LVcER | 50 50 v Ic=100mA RpE<100 Emitter-Base Breakdown Voltage BVEBO 7 7 Vv Ip=0.lmA IC=0 Collector Cutoff Current IcBo 10 10] nA VcB=60V Ip-0 10 10 pa Vcp=60V Ig-0 Ta=-150C Emitter Cutoff Current IgEBO 10 5/ nA VgEB=5V = Ic=0 Base-Emitter Saturation Voltage VBE( sat )* 1.3 1.3] V Ic=150mA Ip=15mA | Collector-Emitter Saturation Voltage VcE( sat )* 1.8 1.5] V Ic=150mA Ip=15mA D.C. Current Gain Epp * 20 35 Ic=0.1lmA VCE=10V 35 15 Ic=10mA VCE=10V 40 120 | 100 300 Ic=150mA VcRE=10V 20 40 Ic=500mA VCE<10V 20 35 Ig=l0mA VCE=10 _ TA=-55C yrent Gain-Bandwidth Product fT 60 70 MHz| Ic=50mA VCE=10V f= 20MHz * Pulse Test + Pulse Width=0.3mS, Duty Cycle=1% 4 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 43510 MICRO ELECTRONICS LTD. TELEPHONE :- FAX: 3410321 KWUN TONG P. 0, BOX69477 CABLE ADDRESS MICROTRON _.3-430181-6, 3-899363;-3-692423,-3-S08204-- - ~ Continued - - < 2N1613 2N1711 PARAMETER SYMBOL MIN MAX | MIN MAX UNIT | TEST CONDITIONS Output Capacitance Cob . 35 25 | pF | VCB-10V Ip-0 Input Capacitance Cib 80 80 | pF | Vep-0.5V Ic=0 Noise Figure NF 12 8 | dB | Ic=0.3mA VCE=-10V Rg=510.0. f=1kHz BW=1Hz Small Signal h~Parameters Input Resistance hib 24 34] 2@ 34] o | Ic=lmA VCB=5V f=lkHz 4 8| 4 8| O | Ice5mA VCB=10V ~ f=lkHz Voltage Feedback Ratio brb 3 8 |x1074| Ic=lmA VCBe5V | f=1lkHz a 3 -4 = 3 5 | x10 Ic=5mA VCB=10V f=1kHz Small Signal Current Gain hfe 30 100; 50 200 Ic=lmA VCE=5V - f=lkHz 35 150 | 70 300 Ic=5mA VCE=10V f=lkHz Output Conductance hob 0.1 1 10,05 0.5 pu Ic=lmA VcCB=5V f=lkHz 0.1 1 |0,05 0.5 po |Ic=5mA VcB=10V f=1kHz