MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.) G u P Eu P G v P Ev P G wP EwP G u N Eu N G v N Ev N G wN EwN U V W S N P P P R L C J A N N E T K M M U G F M AA M Y - DIA. (4 TYP.) AA TAB #110, t = 0.5 H V P P GuP EuP U GvP EvP V GwP EwP W GuN EuN GvN EvN GwN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters A 4.21 107.0 P 0.57 14.5 B 4.02 102.0 Q 0.55 14.0 C 3.540.01 90.00.25 R 0.47 12.0 D 3.150.01 80.00.25 S 0.43 11.0 E 2.01 51.0 T 0.39 10.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies F 1.38 35.0 U 0.33 8.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-28H is a 1400V (VCES), 100 Ampere Six-IGBT Module. G 1.28 32.5 V 0.30 7.5 Type H 1.26 Max. 32.0 Max X 0.24 6.0 Current Rating Amperes VCES Volts (x 50) J 1.18 30.0 Y 0.22 5.5 CM 100 28 K 0.98 25.0 Z M5 Metric M5 L 0.96 24.5 AA 0.08 2.0 M 0.79 20.0 N 0.67 17.0 Sep.2000 MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E-SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E-SHORT) VGES 20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (TC = 25C, Tj 150C) Pc 780 Watts Mounting Torque, M5 Main Terminal - 1.47 ~ 1.96 N*m Mounting Torque, M5 Mounting - 1.47 ~ 1.96 N*m - 830 Grams Viso 2500 Vrms Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V - - 1.0 mA IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 100A, VGE = 15V - 3.1 4.2** Volts IC = 100A, VGE = 15V, Tj = 150C - 2.95 - Volts Total Gate Charge QG VCC = 800V, IC = 100A, VGE = 15V - 510 - nC Emitter-Collector Voltage VEC IE = 100A, VGE = 0V - - 3.8 Volts Min. Typ. Max. Units - - 20 nF - - 7 nF - - 4 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V - - 250 ns tr VCC = 800V, IC = 100A, - - 400 ns td(off) VGE1 = VGE2 = 15V, RG = 3.1 - - 300 ns - - 500 ns tf Diode Reverse Recovery Time trr IE = 100A, diE/dt = -200A/s - - 300 ns Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = -200A/s - 1.0 - C Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.16 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.35 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.025 C/W Sep.2000 MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE 200 160 13 VGE = 20V 11 120 80 10 40 9 7 VCE = 10V Tj = 25C Tj = 125C 160 120 80 40 0 0 2 4 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 8 0 6 8 0 0 10 4 8 12 16 20 0 40 80 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 Tj = 25C IC = 200A 6 IC = 100A 4 2 IC = 40A CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25C 8 102 101 Cies 101 Coes 100 Cres VGE = 0V 8 12 16 20 2.5 3.0 3.5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) VCC = 800V VGE = 15V RG = 3.1 Tj = 125C td(on) 102 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 di/dt = -200A/sec Tj = 25C tr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 Irr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) t rr 102 10-1 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 101 100 2.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 1.5 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 100 1.0 0 0 200 160 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 600V VCC = 800V 12 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM100TF-28H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.16C/W 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.35C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000