MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications y y y y Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 y y y 5 4 y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC110-08 MSTC110-12 MSTC110-16 800V 1200V 1600V 900V 1300V 1700V Maximum Ratings Symbol Conditions Values Units ITAV Sine 180o;Tc=85 110 A ITSM TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 2250 1900 A i2t TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 25000 18000 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 130 -40 to 125 Tvj Tstg Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 100 g Thermal Characteristics Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.28/0.14 /W Rth(c-s) per thyristor / per module 0.2/0.1 /W MSTC110 - Rev 0 Oct, 2011 www.microsemi.com 1/4 MSTC110 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25 ITM =300A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.65 V 20 mA VTO rT For power-loss calculations only (TVJ =125) TVJ =TVJM 0.9 2 V m VGT TVJ =25 , VD =6V 3 V IGT TVJ =25 , VD =6V 150 mA VGD TVJ =125 , VD =2/3VDRM 0.25 V IGD TVJ =125 , VD =2/3VDRM 6 mA IL IH TVJ =25 , RG = 33 TVJ =25 , VD =6V 300 150 600 250 tgd TVJ =25, IG=1A, diG/dt=1A/us TVJ =TVJM 1 mA mA us 100 us IRRM/IDRM tq MSTC110 - Rev 0 Oct, 2011 Min. Max. Units www.microsemi.com 2/4 MSTC110 Performance Curves 200 200 W rec.120 A sin.180 DC 160 DC 150 rec.60 120 rec.30 sin.180 100 rec.120 80 rec.60 50 rec.30 40 PTAV ITAVM 0 0 ITAV 50 100 0 A 150 0 Tc Fig1. Power dissipation 100 2500 Zth(j-S) / W Zth(j-C) 0.25 0.001 t 0.01 0.1 1 10 50HZ A 1250 0 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 300 A 130 Fig2.Forward Current Derating Curve 0.50 0 50 Typ. 200 125 max. 100 25 IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics MSTC110 - Rev 0 Oct, 2011 www.microsemi.com 3/4 MSTC110 100 1/2*MSCT110 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VG IGT VGD125 IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 x Dimensions in mm MSTC110 - Rev 0 Oct, 2011 www.microsemi.com 4/4