This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching Package High-speed switching Incorporating a built-in gate protection-diode Two elements incorporated into one package (Each transistor is separated) Reduction of the mounting area and assembly cost by one half Code SSMini6-F2 Pin Name 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) Basic Part Number 2SJ0672 + 2SK3539G Absolute Maximum Ratings Ta = 25C Tr1 Symbol Rating Unit Drain-source surrender voltage VDSS 50 V Gate-source voltage (Drain open) VGSO 7 V ID 100 mA IDP 200 mA Drain-source surrender voltage VDSS -30 V Gate-source voltage (Drain open) VGSO 7 V ID -100 mA IDP -200 mA PT 125 mW Tch 125 C Tstg -55 to +125 C Peak drain current Tr2 Marking Symbol: 4T Parameter Drain current Drain current Peak drain current ue Total power dissipation * on tin Overall Channel temperature isc Storage temperature Ma int en an ce /D ) * : (17 mm x 10 mm x 1 mm) Publication date: November 2007 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d Features SJJ00395AED Internal Connection (D1) (G2) 6 5 1 (S1) (S2) 4 2 3 (G1) (D2) 1 This product complies with the RoHS Directive (EU 2002/95/EC). UP04979G Electrical Characteristics Ta = 25C3C Tr1 Parameter Symbol Conditions Min Typ Max Drain-source surrender voltage VDSS ID = 10 A, VGS = 0 Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 7 V, VDS = 0 10 A Gate threshold voltage Vth ID = 1.0 A, VDS = 3.0 V 1.0 1.5 V ID = 10 mA, VGS = 2.5 V 8 15 ID = 10 mA, VGS = 4.0 V 6 12 RDS(on) V 0.5 M Di ain sc te on na tin nc ue e/ d Drain-source ON resistance 50 Unit Yfs ID = 10 mA, VDS = 3.0 V Turn-on time * ton Turn-off time * toff 20 60 mS VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 200 ns VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 200 ns pla nc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Forward transfer conductance Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. ton , toff Test circuit (Tr1) VOUT 470 VIN 100 F VGS = 3.0 V 90% 50 10% VDD = 3 V VOUT ton Tr2 Parameter Symbol VDSS Drain-source cutoff current IDSS Min ID = -10 A, VGS = 0 Typ Yfs Ma ton int Forward transfer conductance Turn-off time * toff Max -30 A VGS = 7 V, VDS = 0 10 A -1.0 -1.5 V ID = -10 mA, VGS = -2.5 V 25 45 ID = -10 mA, VGS = -4.0 V 15 30 ID = -1.0 A, VDS = -3.0 V - 0.5 ID = -10 mA, VDS = -3.0 V 20 mS VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA 850 ns VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA 850 ns 280 10% 100 F VGS 50 VDD = -3 V 90% 90% VOUT 10% ton 2 35 ton , toff Test circuit (Tr2) VGS = 0 V -3 V V -1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to ton, toff test circuit. VOUT Unit VDS = -20 V, VGS = 0 Pl ea Vth RDS(on) en an ce /D Gate threshold voltage Turn-on time * Conditions ue on tin IGSS isc Gate-source cutoff current Drain-source ON resistance toff di Drain-source surrender voltage 10% 90% SJJ00395AED toff This product complies with the RoHS Directive (EU 2002/95/EC). UP04979G Common characteristics chart PT Ta 120 100 80 60 M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) 140 40 40 80 120 Ambient temperature Ta (C) Characteristics charts of Tr1 ID VDS ID VGS 70 Ta = 25C VGS = 2.0 V 50 1.9 V 40 1.8 V 30 1.7 V 20 1.6 V 10 0 2 4 6 8 10 12 ce /D isc Drain-source voltage VDS (V) an Yfs VGS Ta = -25C 25C 200 100 80 100 60 40 50 20 140 en 120 100 80 60 40 20 0 1 2 0 1 2 3 4 5 6 Gate-source voltage VGS (V) 0 0 50 100 150 200 250 Drain current ID (mA) RDS(on) VGS Drain-source ON resistance RDS(on) () 160 140 120 85C 150 0 VGS = 3 V Ta = 25C 160 40 int VDS = 3 V Ma Forward transfer admittance |Yfs | (mS) 180 0 VDS = 3 V ue 1.5 V Yfs ID 180 250 on tin Drain current ID (mA) 60 0 300 fs 0 Drain current ID (mA) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty yp transferpadmittance |Y | (mS) duct n.p bo Forward life an ut e ed as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 20 3 Gate-source voltage VGS (V) ID = 10 mA 30 20 Ta = 85C 10 25C -25C 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) SJJ00395AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). UP04979G Characteristics charts of Tr2 ID VDS ID VGS Ta = 25C VGS = -3.50 V 85C -100 -2.75 V -2.50 V -40 -80 -60 60 50 40 30 M Di ain sc te on na tin nc ue e/ d Drain current ID (mA) 25C -120 -3.00 V -60 Ta = -25C -140 -3.25 V -80 VDS = -3 V -160 Drain current ID (mA) -100 Yfs VGS 70 -180 Forward transfer admittance |Yfs | (mS) -120 -40 -20 -20 0 -2 -4 -6 -8 -10 -12 Drain-source voltage VDS (V) 40 30 Ta = 85C 25C 10 ue -25C 0 0 -2 -4 -6 Ma int en an ce /D isc Gate-source voltage VGS (V) 4 -2 on tin Drain-source ON resistance RDS(on) () ID = -10 mA 20 0 -4 -6 Gate-source voltage VGS (V) RDS(on) VGS 50 0 10 0 0 -2 -4 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 20 SJJ00395AED -6 Gate-source voltage VGS (V) an en (5) ue on tin isc ce /D 0.05 6 5 4 1 2 3 (0.5) (0.5) 1.00 0.05 0.13 -0.02 0.05 0.05 di p Pl 0 to 0.05 lan nclu ea 1.20 ed de se 0.55 pla m m s 1.60 v ne ain ain foll i htt sit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur (5) mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o (0.27)/ n. int Ma M Di ain sc te on na tin nc ue e/ d 1.60 0.05 0.20 -0.02 +0.05 0.20 0.05 This product complies with the RoHS Directive (EU 2002/95/EC). UP04979G SSMini6-F2 Unit: mm +0.05 SJJ00395AED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.