Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©2002
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
IC(DC): −10 A, IC(pulse): −15 A
• High hFE and low collector saturation voltage:
hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A)
VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −30 V
Collector to emitter voltage VCEO −20 V
Emitter to base voltage VEBO −10 V
Collector current (DC) IC(DC) −10 A
Collector current (pulse) IC(pulse)*−15 A
Base current (DC) IB(DC) −0.5 A
Total power dissipation PT (Ta = 25°C)** 1.0 W
Total power dissipation PT (Tc = 25°C) 15 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
** Printing board mounted
Data Sheet D16119EJ1V0DS
2
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = −20 V, IE = 0 −1.0
µ
A
Emitter cutoff current IEBO VEB = −8.0 V, IC = 0 −1.0
µ
A
DC current gain hFE1*VCE = −2.0 V, IC = −0.5 A 200 600
DC current gain hFE2*VCE = −2.0 V, IC = −4.0 A 160
Collector saturation voltage VCE(sat)*IC = −4.0 A, IB = −0.05 A −0.2 −0.25 V
Base saturation voltage VBE(sat)*IC = −4.0 A, IB = −0.05 A −0.9 −1.2 V
Gain bandwidth product fTVCE = −5.0 V, IE = 1.5 A 180 MHz
Output capacity Cob VCB = −10 V, IE = 0, f = 1.0 MHz 220 pF
Turn-on time ton 80 ns
Storage time tstg 300 ns
Fall time tf
IC = −5.0 A, IB1 = −IB2 = 0.125 A,
RL = 2.0 Ω, VCC ≅ −10 V
60 ns
* Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking L K
hFE2 200 to 400 300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615 2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
Data Sheet D16119EJ1V0DS 3
2SA1615, 1615-Z
TYPICAL CHARACTERISTICS (Ta = 25 °
°°
°C)
Total Power Dissipation PT (W)
Case Temperature TC (°C)
Collector to Emitter Volta
g
e VCE
(
V
)
Case Temperature TC (°C)
IC Derating dT (%)
Collector Current IC (A)
Collector to Emitter Volta
g
e VCE
(
V
)
Base to Emitter Voltage VBE (V) Collector Current IC (A)
Collector Current IC (A)
DC Current Gain hFE
Collector Current IC (A)
Single pulse
–15
–10
–5
Data Sheet D16119EJ1V0DS
4
2SA1615, 1615-Z
Collector Current IC (A)
Collector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Data Sheet D16119EJ1V0DS 5
2SA1615, 1615-Z
[MEMO]
2SA1615, 1615-Z
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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