SGA6389Z SGA6389ZDC to 4500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA6389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. 20 0 InGaP HBT GAIN 15 Gain (dB) Si CMOS -10 ORL 10 -20 IRL 5 Si BJT -30 Return Loss (dB) SiGe BiCMOS GaAs pHEMT VD= 4.0 V, ID= 75 mA (Typ.) GaAs MESFET Gain & Return Loss vs. Frequency GaAs HBT SiGe HBT Broadband Operation: DC to 4500MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching(R) Applied Si BiCMOS PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite GaN HEMT 0 InP HBT -40 0 RF MEMS 1 LDMOS Parameter Small Signal Gain Min. 14.1 Output Power at 1dB Compression Output Third Intercept Point 2 3 Frequency (GHz) Specification Typ. 15.5 14.0 13.3 20.2 18.9 35.2 32.6 4500 4 Max. 17.3 5 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 16.0 dB 1950MHz Output Return Loss 11.9 dB 1950MHz Noise Figure 4.2 dB 1950MHz Device Operating Voltage 4.6 4.9 5.4 V Device Operating Current 72 80 88 mA Thermal Resistance 97 C/W (Junction - Lead) Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25C, ZS =ZL =50 RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA6389Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 160 mA Max Device Voltage (VD) 7 V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 C -40 to +85 C Max Storage Temp +150 C Moisture Sensitivity Level MSL 2 Operating Temp Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz Small Signal Gain dB 15.7 15.6 15.5 14.0 Output Third Order Intercept Point dBm 36.6 36.0 35.2 32.6 Output Power at 1dB Compression dBm 20.1 20.4 20.2 18.9 Input Return Loss dB 22.3 27.5 27.4 16.0 Output Return Loss dB 14.7 14.5 14.8 11.9 Reverse Isolation dB 20.4 20.2 20.3 20.1 Noise Figure dB 4.0 3.7 3.8 4.2 Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL =25C, ZS =ZL =50 OIP3 vs. Frequency 22 36 20 P1dB(dBm) OIP3(dBm) 13.3 31.2 18.1 13.7 10.8 19.7 4.4 12.0 26.8 15.5 11.0 10.4 18.2 4.8 VD= 4.9 v, ID= 80 mA 40 32 28 +25C TL 3500 MHz P1dB vs. Frequency VD= 4.9 V, ID= 80 mA 24 2400 MHz 18 16 +25C -40C TL 14 +85C -40C +85C 20 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 Frequency (GHz) 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA Noise Figure (dB) 7 6 5 4 3 TL=+25C 2 0 2 of 6 1 2 Frequency (GHz) 3 4 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6389Z |S21| vs. Frequency |S11| vs. Frequency VD= 4.9 v, ID= 80 mA 20 -10 |S11| (dB) 15 |S21| (dB) VD= 4.9 v, ID= 80 mA 0 10 5 0 0 1 2 3 4 Frequency (GHz) -30 +25C -40C +85C TL -20 -40 5 0 6 1 |S12| vs. Frequency 6 -10 |S22| (dB) |S12| (dB) 5 VD= 4.9 v, ID= 80 mA 0 -15 -20 -25 -30 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 0 6 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 ohms * 95 -20 -30 +25C -40C +85C TL 1 2 3 4 Frequency (GHz) 5 6 VD vs. Temperature for Constant ID = 80 mA 5.5 90 5.3 +85C 80 VD(Volts) 85 ID(mA) 2 3 4 Frequency (GHz) |S22| vs. Frequency VD= 4.9 v, ID= 80 mA -10 +25C -40C +85C TL +25C 75 -40C 5.1 4.9 4.7 70 4.5 65 4.5 4.7 4.9 VD(Volts) 5.1 5.3 -40 -15 10 35 Temperature(C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 SGA6389Z Pin 1 2, 4 Function RF IN GND Description 3 RF OUT/BIAS RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper operation. Application Schematic Values VS RBIAS 1 uF 1000 pF CD LC 1 RF in CB 4 SGA6389Z 2 3 RF out CB Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 13 8V 39 10 V 12 V 62 91 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout Mounting Instructions: 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6389Z Suggested Pad Layout Preliminary Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA6389Z Part Identification Ordering Information Ordering Code 6 of 6 Description SGA6389Z 13" Reel with 3000 pieces SGA6389ZSQ Sample bag with 25 pieces SGA6389ZSR 7" Reel with 100 pieces SGA6389ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014