GaAs IRED & PHOTO-TRANSISTOR TLP626, -2, -4 (TLP626) PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION TLP626 403 Weight : 0.26g The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared Fy emitting diodes connected in inverse parallel, optically coupled to a photo-transistor. The TLP626-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP626-4 provides four isolated channels in a sixteen plastic DIP package. e Collector-Emitter Voltage 55V Min. Current Transfer Ratio CURRENT TRANSFER RATIO (Mi JEDEC = in.) MARKING EIAJ CLASSI = 25C Ta = 25~75C OF FICATION [7-~dima [p=t05mAl Ips timA Cuasst TOSHIBA _11-5B1 VcE=0.5V VcR=1.5V VcE=0.5V N go7 6 5 TLP626-2 1 a Weight : 0.54g Rank BV 200% 100% 100% BV T . Standard 100% 50% 50% BV, Blank -| | e Isolation Voltage 500Vems Min. snacouy 1624025 UL Recogni ad [ot ecognized UL1577 File No. 67349 Pale e Note: Application type name for certification test, ME az9+8d 5| please use standard product type name, i.e. | an~eeo TLP626 (BV) TLP626 L254 den - PIN CONFIGURATIONS (TOP VIEW} JEDEG TLP626 TLP626-2 TLP626-4 EIAJ _ iq y= 4 1 16 TOSHIBA 11-101 20 3 2 15 TLP626- 9 Weight : i.lg 1, ANODE 3 14 3. EMITTER 4 13 4. COLLECTOR 13 ANODE 5 12 ja 1982025 3 1624025, CATHODE \ 2,4 CATHODE 6 ll Yt fost ois ANODE z | 5,7 : EMITTER 7 10 | Tacos 3 | res=sad 6,8 : COLLECTOR 9 ee S| 1, 3,5, 7 : ANODE, CATHODE JEDEC _ 2, 4, 6, 8 : CATHODE, ANODE 9,11, 13,15 : EMITTER EIAJ _ 459 TLP626, -2, -4 (TLP626) MAXIMUM RATINGS (Ta = 25C) RATING CHARACTERISTIC SYMBOL TLps26 TLP626-2 UNIT TLP626-4 Forward Current Ip 60 50 mA Forward Current Derating Alp / C | --0.7 (Ta2 39C) | 0.5 (Ta = 25C) |mA/C qq |Pulse Forward Current Ipp 1(100,s pulse, 100pps) A a Power Dissipation (1 Circuit) Pp 100 70 mW Power Dissipation een C, 1 Cireuit) Pp /C 10 07 mWwrc Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 55 v 5 Emitter-Collector Voltage VECO 7 Vv 5 Collector Current Ic 50 mA | Collector Power Dissipation (1 Circuit) Pc 150 100 mW e sage A ; eae. te Derating PQ/C -15 10 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~150 C Operating Temperature Range Popr 55~100 C Lead Soldering Temperature Tsol 260 (10s) C Total Package Power Dissipation (1 Circuit) Pp 250 150 mW tae meet Cheui) Dissipation Derating Prp/C 25 15 mW/C Isolation Voltage (Note 1) BVs 5000(AC, Imin., RH= 60%) Vrms Note 1: Device considered a two terminal : LED side pins shorted together, and DETECTOR side pins shorted together. 460 (TLP626) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) TLP626, -2, -4 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VE Ip=+10mA 1.0 | 1.15 1.3; V a Reverse Current Ip VE=+0.7V _ 2.5 20) A Capacitance Cy V=0, f=1MHz 60; pF Collector-Emitter p | Breakdown Voltage V(BR) CEO|! =0.5mA 55 | Vv So : Emitter-Collector & = | Breakdown Voltage V(BR) ECO| Ig =0.1mA 7 v VcBp=24V 10 100| nA & 1] I a Collector Dark Current CEO Vor =24V, Ta=85C _ 2 50| pA a ; Capacitance Collector na pe to Emitter CcE V=0, f=1MHz 12] pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX. | UNIT . Ip=t1mA, VcRp=0.5V 100 | 1200 Current Transfer Ratio Ic/Ip Rank BV 300 | 1200 Go Ip= +0.5mA, VoR=1.5V 50 | _ Low Input CTR Ic / Ip ow) Rank BV 100 | = % Collector-Emitter Ig=0.5mA, [p= t1mA 0.4 Saturation Voltage VcE (sat) |IG=1mA, Ip= 1mA _- 0.2] Vv 6 Rank BV _ _ 0.4 Off-State Collector Current Ic (off) | Vp=t0.7V, VoR=24V _ 1 10) pA CTR Symmetry *! Ic (ratio) | Ic p= 1mA)/Icdp=1mA) 0.5] 2; COUPLED ELECTRICAL CHARACTERISTICS (Ta = - 25~75C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX, | UNIT . Ip=1mA, VcRp=0.5V 50 | _ Current Transfer Ratio Ic/Ip Rank BV Ty = % Ip=0.5mA, VoR=1.5V 50 | Low Input CTR Ic /Ip (ow) Rank BV = 100 1 % *y I Icg (Ip=Ip2, VcR=5V) H wel I Er Inj o- =0 VCE C (ratio) 1c1 Up=Ipy, VCE =5V) vt K 1] Te2 Ip2 o- [J 461 TLP626, -2, -4 (TLP626) ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Capacitance Input to Output Cs Vg=0, f=1MHz _ 0.8} pF Isolation Resistance Rg Vg =500V 5x10! 104) 2 AC, 1 minute 5000 . Vrms Isolation Voltage BVS AC, 1 second, in of | _ 10000} DC, 1 minute,in oi! 10000} Vde SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Rise Time tr _ 8 _ Fall Time ty Vcc=10V, Ic=2mA _ 8 _ Turn-on Time ton Rp = 1000 10 we Turn-off Time toft =~ 8 Turn-on Time ton RL=4.7k00 (Fig.1) _ 10 _ Storage Time ts Voc =5V, Ip=+1.6mA _ 50 _ BS Turn-off Time TOFF 300 _ RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL| MIN. | TYP. | MAX. | UNIT Supply Voltage Voc 5 24 v Forward Current Ir (RMS) | 1.6 20 {| mA Collector Current Ic _ 1 10 | mA Operating Temperature Topr 25]) 75 | C Fig. 1 SWITCHING OPERATING CONDITIONS Ip Ht po VC Ip | ts | . 7 Ry Voc L____oVcEp VCE {45 0.5V tON tOFF 462 TLP626, -2, -4 (TLP626} & 2 Fs a = 6 oc me as 2 7 a TLP626 af | e Ge TLP626 ox a Bg TLP626-2, 4 az TLP626-2, -4 o3 3S me = < <4 = 2 g 8 3 3 < < -20 0 20 40 60 80 100 120 -20 0 20 #40 60 6880) 100Ss*1:20 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta CC) Irp DR {PULSE WIDTH s 10048 & Zz coy te = ~ 3 Ta=25C < 3 = < = z2 . OE 7 nS Ba oe SE 5 2 Oo * Q 5 4 a < < z g & 3 a < Fl 107 3 107 DUTY CYCLE RATIO DR 0.4 0.6 0.8 1.0 1.2 14 1.6 FORWARD VOLTAGE Vp () AVp/ATa Ip Ipp - VFP PULSE WIDTH s l0us REPETITIVE FREQUENCY = 100Hz Ta=25C ERATURE (mV /*C) Ipp (mA) FORWARD VOLTAGE TEMP COEFFICIENT 4Vp/4To PULSE FORWARD CURRENT 0.3 0.5 1 a. O45 10 30 50 oO 0.4 0.8 1.2 1.6 2.0 24 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vep (V) 463 TLP626, -2, -4 (TLP626) Ic/lp Ip Ic - VCE Ip=1.0mA & & 2 5 5 2 fe 2 a & a & 2 Zz a 2 & Ta =25C a g 8 ig Vor =5V a o = += Vogal sy f 5 a weee VCR =0.5V 3 3 5 wh 03 0.6 { 3 5 10 FORWARD CURRENT Ip (mA) Ic - IF Ta=25C A 03 05 1 35 10 Vog =5V COLLECTOR-EMITTER VOLTAGE Veg (V) ae Voe=liv lo Ta ---- Vop=0.5V 1 VoR=ls5v en-- VoE=0.5V Ip=2mA CE 4 & oO > * z & & ra) 2 @ 3 5 3 a r te & 5 2 5 om 3 o 3 8 a o1 3 5 0.0NF 0.3 0.6 1 FORWARD CURRENT 3 5 -20 0 20 40 60 AMBIENT TEMPERATURE Ta a0 C) 100 Ip (mA)TLP626, -2, -4 (TLP626) SWITCHING TIME Ry Ta=25C Ip=1.6mA ~ Vec=5Vv 3 a 2 2 4 & 6) 5 z % & 3 Z = xs 5 < & a = we a o = Q gq 4 a 8 6 0 20 40 60 80 100 120 1 3 5 10 30 50 100 AMBIENT TEMPERATURE Ta (C) LOAD RESISTANCE Ry (kQ) 465