S2386-5K - Hamamatsu Photonics K.K.

Si photodiodes

S2386 series

For visible to near IR, general-purpose photometry

www.hamamatsu.com 1

Analytical instrumentsHigh sensitivity in visible to near infrared range

Optical measurement equipment

Low dark current

High reliability

Superior linearity

Structure / Absolute maximum ratings

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Type no.

Dimensional

outline/

Window material*

Package

Photosensitive

area size

Effective

photosensitive

area

Absolute maximum ratings

Reverse voltage

VR max

Operating

temperature

Topr

Storage

temperature

Tstg

(mm) (mm2) (V) (°C) (°C)

S2386-18K (1)/K TO-18 1.1 × 1.1 1.2

30 -40 to +100 -55 to +125

S2386-18L (2)/L

S2386-5K (3)/K

TO-5

2.4 × 2.4 5.7

S2386-44K (4)/K 3.6 × 3.6 13

S2386-45K (5)/K 3.9 × 4.6 17.9

S2386-8K (6)/K TO-8 5.8 × 5.8 33

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product

within the absolute maximum ratings.

* Window material K=borosilicate glass, L=lens type borosilicate glass

Type no.

Spectral

response

range

Peak

sensitivity

wavelength

λp

Photosensitivity

(A/W)

Short

circuit

current

Isc

100 lx

Dark

current

VR=

10 mV

max.

Temp.

coefﬁ cient

of ID

TCID

Rise time

VR=0 V

RL=1 kΩ

Terminal

capacitance

VR=0 V

f=10 kHz

Shunt

resistance

Rsh

VR=10 mV

Noise

equivalent

power

NEP

VR=0 V

λ=λp

λp

GaP

LED

560

He-Ne

laser

633

GaAs

LED

930

(nm) (nm)

Min.

(μA)

Typ.

(μA) (pA)

(times/°C)

(μs) (pF)

Min.

(GΩ)

Typ.

(GΩ)(W/Hz1/2)

S2386-18K

320 to

1100 960 0.6 0.38 0.43 0.59

1 1.3 2

1.12

0.4 140 5 100

6.8 × 10

-16

S2386-18L 4 5.7

S2386-5K 4.4 6.0 5 1.8 730 2 50

9.6 × 10

-16

S2386-44K 9.6 12 20 3.6 1600 0.5 25

1.4 × 10

-15

S2386-45K 12 17 30 5.5 2300 0.3

S2386-8K 26 33 50 10 4300 0.2 10

2.1 × 10

-15

Features Applications

Si photodiodes S2386 series

Spectral response

Directivity

Photosensitivity temperature characteristic

Wavelength (nm)

Photosensitivity (A/W)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

300 500400 600 700 800 900 1000 1100

(Typ. Ta=25 °C)

90°

80°

70°

60°

50°

30°

Relative sensitivity

40°

90°

80°

70°

60°

50°

30°

40°

20° 10° 0° 10° 20°

80%

100%

20%

40%

60%

S2386-18K

S2386-18L

(Typ. Ta=25 °C)

Wavelength (nm)

Temperature coefficient (%/°C)

-0.5

+0.5

+1.0

+1.5

300 400 600 700500 800 900 1000 1100

(Typ.)

KSPDB0110EB

KSPDB0111EA

KSPDB0058EC

Dark current vs. reverse voltage

S2386-18K/-5K/-44K/-45K

S2386-8K

Reverse voltage (V)

Dark current

(Typ. Ta=25 °C)

10 fA

100 fA

1 pA

10 pA

100 pA

1 nA

0.01 0.1 1 10 100

KSPDB0113ED

Si photodiodes S2386 series

ġġġıįĵĶ

Lead

14 2.05 ± 0.3

Connected to case

2.3

3.6 ± 0.2

2.54 ± 0.2

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

Photosensitive surface

Glass

Active area

1.1 × 1.1

Window

3.0 ± 0.1

4.7 ± 0.1

5.4 ± 0.2

2.54 ± 0.2

Photosensitive area

1.1 × 1.1

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Connected to case

Window

3.0 ± 0.1

4.7 ± 0.1

5.4 ± 0.2

Photosensitive surface

Glass

14 3.6 ± 0.2

0.45

Lead

2.3

Dimensional outlines (unit: mm)

KSPDA0048EE

KSPDA0191EC

(2) S2386-18L(1) S2386-18K

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Distance from photosensitive

area center to cap center

-0.6≤X≤0

-0.3≤Y≤+0.3

Connected to case

Photosensitive area

3.6 × 3.6

Window

5.9 ± 0.1

9.1 ± 0.2

8.1 ± 0.1

5.08 ± 0.2

0.3

20 4.1 ± 0.2

2.8

Photosensitive surface

Glass

0.45

Lead

9.1 ± 0.2

8.1 ± 0.1

Photosensitive area

2.4 × 2.4

20 4.1 ± 0.2

2.8

Photosensitive surface

Glass

Connected to case

0.45

Lead

Distance from photosensitive

area center to cap center

-0.3≤X≤+0.3

-0.3≤Y≤+0.3

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

Window

5.9 ± 0.1

5.08 ± 0.2

KSPDA0193EC

KSPDA0192EC

(4) S2386-44K(3) S2386-5K

Cat. No. KSPD1035E06 Feb. 2013 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of February, 2013.

Si photodiodes S2386 series

Distance from photosensitive

area center to cap center

-0.7≤X≤+0.1

-0.3≤Y≤+0.3

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

20 4.1 ± 0.2

2.8

5.08 ± 0.2

Photosensitive surface

Glass

0.45

Lead

Connected to case

Photosensitive area

3.9 × 4.6

9.1 ± 0.2

8.1 ± 0.1

Window

5.9 ± 0.1

0.4

KSPDA0178ED

(5) S2386-45K

13.9 ± 0.2

12.35 ± 0.1

Window

10.5 ± 0.1

7.5 ± 0.2

Photosensitive area

5.8 × 5.8

ıįıĹĶ

5.0 ± 0.2

1.8

Index mark ( 1.4)

Connected to case

Photosensitive surface

Glass

ġġġ0.45

Lead

Distance from photosensitive

area center to cap center

-0.315≤X≤+0.485

-0.4≤Y≤+0.4

The glass window may extend

a maximum of 0.2 mm above

the upper surface of the cap.

KSPDA0194EC

(6) S2386-8K