SEME 2N3700DCSM LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) * DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 0.13 (0.170 0.005) 2 2.54 0.13 (0.10 0.005) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 2.29 0.20 (0.09 0.008) * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS 6.22 0.13 (0.245 0.005) A= 1.27 0.13 (0.05 0.005) LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 * HIGH VOLTAGE APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3700 for high reliability/ space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2N3700 140V 80V 7V 1A 350mW 525mW 2mW / C 3mW/C 240C/W -65 to 200C Prelim. 2/98 SEME 2N3700DCSM LAB ELECTRICAL CHARACTERISTICS (per Device) Parameter VCEO(sus)* (Tcase = 25C unless otherwise stated) Test Conditions Collector - Emitter Sustaining Voltage Min. IC =10mA Typ. Max. Unit V 80 (IB = 0) ICBO* Collector - Base Cut-off Current VCB = 90V 10 nA (IE = 0) VCB = 90V 10 A IEBO* Emitter Cut-off Current (IC = 0) VEB = 5V 10 nA VCE(sat)* Collector - Emitter Saturation Voltage IC = 150mA IB = 15mA 0.2 V IC = 500mA IB = 50mA 0.5 V 1.1 V Tamb = 150C VBE(sat)* Base - Emitter Saturation Voltage IC = 150mA IB = 15mA hFE* DC Current Gain (VCE = 10V) IC = 0.1mA VCE = 10V 50 - IC = 10mA VCE = 10V 90 - IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 - IC = 1A VCE = 10V 15 - IC = 150mA VCE = 10V V(BR)CBO Collector-base Breakdown Voltage 300 - - IC = 100A 140 V IE = 100A 7 V (IE = 0) V(BR)EBO Emitter-base BreakdownVoltage (IC = 0) * Pulse test tp = 300s , 1% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz 100 200 MHz hfe Small Signal Current Gain IC = 1mA VCE = 5V f = 1kHz 80 400 - CEBO Emitter-base Capacitance IC = 0 VEB = 0.5V f = 1MHz 60 pF CCBO Collector-base Capacitance IC = 0 VCB = 10V f = 1MHz 12 pF rbb'Cb'c Feedback time constant IC = 10mA VCB = 10V f = 4MHz 400 ps Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 25 Prelim. 2/98