2N3700DCSM
LAB
SEME
Semelab plc. Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612. Prelim. 2/98
HIGH VOL T AGE, MEDIUM POWER, NPN
DUAL TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH VOLTAGE
APPLICATIONS:
Dual Hermetically sealed surface mount ver-
sion of the popular 2N3700 for high reliability/
space applications requiring small size and
low weight devices.
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IB= 0)
ICCollector Current
PDPer Device Dissipation
PDTotal Device Dissipation
PDDerate above 25°C (Per Device)
(Total)
Rja Ther mal Resistance Junction to Ambient
Tstg Storage Temperature
140V
80V
7V
1A
350mW
525mW
2mW / °C
3mW/°C
240°C/W
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.32 ± 0.13
(0.170 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
0.23
(0.009)
rad.
A =
2N3700
Parameter Test Conditions Min. Typ. Max. Unit
V
nA
µA
nA
V
V
V
-
-
-
-
-
-
V
V
80
10
10
10
0.2
0.5
1.1
50
90
100 300
50
15
140
7
IC=10mA
VCB = 90V
VCB = 90V Tamb = 150°C
VEB = 5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 0.1mA VCE = 10V
IC= 10mA VCE = 10V
IC= 150mA VCE = 10V
IC= 500mA VCE = 10V
IC= 1A VCE = 10V
IC= 150mA VCE = 10V
IC= 100µA
IE= 100µA
VCEO(sus)* Collector – Emitter Sustaining Voltage
(IB= 0)
ICBO* Collector – Base Cut-off Current
(IE= 0)
IEBO* Emitter Cut-off Current (IC= 0)
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain (VCE = 10V)
V(BR)CBO Collector-base Breakdown Voltage
(IE= 0)
V(BR)EBO Emitter-base BreakdownVoltage
(IC= 0)
2N3700DCSM
LAB
SEME
Semelab plc. Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612. Prelim. 2/98
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (per Device) (Tcase = 25°C unless otherwise stated)
fTTransition Frequency
hfe Small Signal Current Gain
CEBO Emitter-base Capacitance
CCBO Collector-base Capacitance
rbb’Cb’c Feedback time constant
IC= 50mA VCE = 10V f = 20MHz
IC= 1mA VCE = 5V f = 1kHz
IC= 0 VEB = 0.5V f = 1MHz
IC= 0 VCB = 10V f = 1MHz
IC= 10mA VCB = 10V f = 4MHz
100 200
80 400
60
12
25 400
MHz
-
pF
pF
ps
* Pulse test tp = 300µs , δ ≤ 1%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
