TSP058C - TSP320C FEATURES * Protects by limiting voltages and shunting surge currents away from sensitive circuits * Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL * Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 THYRISTOR * Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life DO-201AE SUMMARY ELECTRICAL CHARACTERISTICS Rated Repetitive PeakOff-State Voltage Part Number Breakover Voltage On-State Voltage Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Max. Max. Max. Max. Max. Min. VDRM VBO @ IBO V T @ 1A I DRM I BO IH Typ. Max. C O @ 0 V dc Typ. Max. C O @ 5 0 V dc V V V A mA mA TSP058C 58 77 5 5 800 150 TSP065C 65 88 5 5 800 TSP075C 75 98 5 5 800 TSP090C 90 130 5 5 800 150 70 80 23 34 TSP120C 120 160 5 5 800 150 63 79 20 29 pF pF 85 105 35 43 150 80 150 78 101 34 40 95 30 37 TSP140C 140 180 5 5 800 150 61 78 19 28 TSP160C 160 220 5 5 800 150 58 75 19 27 TSP190C 190 260 5 5 800 150 57 71 19 26 TSP220C 220 300 5 5 800 150 57 71 18 26 TSP275C 275 350 5 5 800 150 56 70 18 25 TSP320C 320 400 5 5 800 150 56 70 17 24 Notes (1,3) (3,5,6) (3) (3) (3) (2,3) (3) (3) (3) (3) NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 K, 1/2 AC cycle Ver: June 2001 PAGE 1 TSP058C - TSP320C PRELIMINARY AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE TSP058C - TSP320C Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: * Ambient operating temperature range * Maximum telephone line operating current (highest battery and shortest copper loop) * Maximum operating voltage: (Maximum DC bias + peak ringing voltage) * Maximum surge current * System voltage damage threshold * Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. THYRISTOR 3. Select surge current ratings (IPPS and ITSM) those which the application must withstand. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. TSP058C - TSP320C PRELIMINARY SELECTION GUIDE 8. Independently evaluate and test the suitability and performance of the device in the application MAXIMUM SURGE RATINGS (TJ = 25 C UNLESS OTHERWISE NOTED) Rating Non-Repetitive Peak Pulse Current Non-Repetitive Peak On-State Surge Current Symbol I PPS I TSM Short-Circuit Current Wave 2/10 s 8/20 s 10/160 s 5/310 s 10/560 s 10/1000 s Open-Circuit Voltage Wave 2/10 s 1.2/50 s 10/160 s 10/700 s 10/560 s 10/1000 s Value 500 A 350 A 200 A 150 A 125 A 100 A Notes (1,2,4,5,6) 60A (1,2,3,4) Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 C. % Ipps 100% 80% 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 60% 40% 20% 0% To Ta Tb Time T1 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0 Ver: June 2001 PAGE 2 TSP058C - TSP320C Unit Rating Symbol Value Storage Junction Temperature Range TSTG -50 to 150 O Operating Junction Temperature Range TJ -40 to 150 O Operating Ambient Temperature Range Ta -40 to 65 O C C C THYRISTOR Notes: PCB board mounted on minimum foot print. THERMAL CHARACTERISTICS Characteristic Symbol Value Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. RJL Max. 20 Unit O C/W Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering. ELECTRICAL CHARACTERISTICS (TC = 25C UNLESS OTHERWISE NOTED) Parameters Test Conditions Max. Unit I DRM 5 A f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 K , 1/2 AC cycle I BO 800 mA 10/1000s waveform, ISC = 10A, VOC = 62 V, RL = 400 IH Repetitive Peak Off-State Current VD = rated VDRM Breakover Current Holding Current1 On-State Voltage I T = 1 A, Tw = 300 s, 1 pulse Symbol VT Min. 150 mA 5 V Notes: Specific IH values are available by request. Ver: June 2001 PAGE 3 TSP058C - TSP320C PRELIMINARY MAXIMUM THERMAL RATINGS TSP058C - TSP320C PRELIMINARY +I I PPS I TSM IT I BO IH I DRM +V VT V DRM V BO TSP058C - TSP320C _V THYRISTOR I BR V BR _I Characteristic Symbol Value VBO Breakover Voltage Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise I BO Breakover Current Instantaneous current flowing at the breakover voltage (VBO) IH Holding Current Minimum current required to maintain the device in the on-state IT On-state current Current through the device in the on-state condition V On-state voltage Voltage across the device in the on-state condition at a specified current (IT) VDRM Rated Repetitive Peak Off-State Voltage The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages I DRM Repetitive Peak Off-State Current The maximum (peak) value of current that results from the application of VDRM I PPS Non-Repetitive Peak pulse current Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test di/dt Critical rate of rise of on-state current Rated value of the rate of rise of current that the device can withstand without damage. dv/dt Critical Rate of Rise of Off-State Voltage The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state. T Ver: June 2001 PAGE 4 TSP058C - TSP320C F = 1 MHz, Vac = 15 mVrms Off-State Capacitance CO pF 1 V dc 2 V dc Max. Typ. 5 V dc Max. Typ. 50 V dc Typ. Max. Typ. Max. Typ. Max. TSP058C 85 105 75 90 69 83 TSP065C 80 101 71 86 65 79 60 70 35 43 56 66 34 40 TSP075C 78 95 65 80 59 73 50 TSP090C 70 80 58 66 52 57 43 60 30 37 50 23 34 TSP120C 63 79 52 60 47 58 39 45 20 29 TSP140C 61 78 50 58 45 56 36 44 19 28 TSP160C 58 75 48 56 43 53 34 43 19 27 TSP190C 57 71 47 55 42 49 33 42 19 26 TSP220C 57 71 47 55 42 49 33 42 18 26 TSP275C 56 70 46 55 42 49 32 42 18 25 TSP320C 56 70 46 55 41 49 32 42 17 24 MECHANICAL DATA * Case: JEDEC DO-201AE molded plastic DO-201AE Unit: inch ( mm ) * Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 * Standard packaging: 52 mm tape .042(1.07) .037(.94) .375(9.5) .285(7.2) * Weight: 0.04 ounce, 1.1 gram 1.0(25.4) MIN. * Polarity: Bi-directional Ver: June 2001 .210(5.3) .188(4.8) PAGE 5 THYRISTOR 0 V dc TSP058C - TSP320C Part Number 1.0(25.4) MIN. PRELIMINARY CAPACITANCE CHARACTERISTICS TSP058C - TSP320C Part Number Marking Code TSP058C TSP058C TSP065C TSP065C TSP075C TSP075C TSP090C TSP090C TSP120C TSP120C TSPP058C TSP140C TSP140C WWP PEC YW TSP160C TSP160C PEC PanJit logo TSP190C TSP190C Y Last digit of calendar year TSP220C TSP220C WW Weekly P Production line TSP275C TSP275C TSP320C TSP320C 1st line: Marking code THYRISTOR 2nd line: TSP058C - TSP320C PRELIMINARY DEVICE MARKING CODE ORDER & PACKING INFORMATION Device TSPxxxC Ver: June 2001 Packing Min. Order Q'ty Order As Remark 13" Tape & Reel 4,000 pcs TSPxxxC Standard Packing Bulk 1,000 pcs TSPxxxC-B Ammunition 3,000 pcs TSPxxxC-T/B PAGE 6 TSP058C - TSP320C 90 70 TSP075SC 80 60 B series device 50 40 A series device 30 20 50 100 150 200 250 50 TSP140SC 40 TSP190SC 30 20 300 350 10 0.1 1 VDRM (V) V D=0 Volts DC f=1 M HZ 10 100 VD Off-state Voltage (V) v d=15mV RMS AC O T J= 25 C TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE f=1 M HZ v d=15mV RMS AC O T J= 25 C TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE 100 TSP220SC 10 1 TSP220SB 0.1 0.01 0.001 0.0001 0 TSP220SB 20 40 60 80 100 120 140 150 O TJ ( C ) TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified. (c) Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw email: sales@panjit.com.tw Ver: June 2001 PAGE 7 TSP058C - TSP320C Capacitance (pF) 60 TSP120SC THYRISTOR Capacitance (pF) C series device 70 I D, Off-State Current (mA) PRELIMINARY RATING AND CHARACTERISTIC CURVES