Vy VISHAY VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V(BR)Dss Min (V) 'Ds(on) Max (Q) Vesith) (V) Ip (A) VP0300B 2.5@ Ves=-12V -2 to 4.5 1.25 VPO300L 2.5 @ Ves =-12V -2 to 4.5 0.32 VPO300LS -30 2.5 @ Ves =-12V -2 to 4.5 0.5 VvQ2001J 2@Ves=-12V -2 to 4.5 0.6 VQ2001P 2@Ves=-12V -2 to 4.5 0.6 FEATURES BENEFITS APPLICATIONS @ High-Side Switching @ Low On-Resistance: 1.5 Q @ Moderate Threshold: -3.1 V @ Fast Switching Speed: 17 ns @ Low Input Capacitance: 60 pF TO-205AD (TO-39) @ Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer e Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. @ Battery Operated Systems @ Power Supply, Converter Circuits TO-226AA e@ Motor Control Dual-In-Line (Case Drain) (TO-92) TO-92S CI s Ss P< Sy EPL IBF S4 > P Ss 2 13 G G NC [4] 11] NC D D P Se [6 | g | 83 P Fer oF] a Top View Top View Top View VP0300B VPO300L VPO300LS ke . op View Plastic: VQ2001J Sidebraze: VQ2001P ABSOLUTE MAXIMUM RATINGS (T, = 25C UNLESS OTHERWISE NOTED) VQ2001 J/P Parameter Symbol VPO300B | VPO300L | VPO300LS | Single | Total Quad | Unit Drain-Source Voltage Vbs -30 30 30 -30 -30 Vv Gate-Source Voltage Vas +20 +20 +20 +20 +20 Continuous Drain Current Ta= 25C Io 1.25 0.32 0.5 0.6 0.6 (Ty = 150C) Ta= 100C 0.79? 0.2 0.32 0.37 0.37 A Pulsed Drain Current Ibm -3 2.4 -3 -2 -2 Ta= 25C 6.25 0.8 0.9 1.3 2 Power Dissipation Pp Ww Ta= 100C 2.52 0.32 0.4 0.52 0.8 Maximum Junction-to-Ambient Rthua 20 156 139 96 62.5 C Operating Junction and a Storage Temperature Range Ta Tsig 55 to 150 C Notes a. Pulse width limited by maximum junction temperature. b. Power dissipation and continuous drain current at To = 25C; Rinuc = 20C/W. Applications information may also be obtained via FaxBack, request document #70611. Document Number: 70217 S-58620Rev. C, 21-Jun-99 www.siliconix.com * FaxBack 408-970-5600 1VP0300B/L/LS, VQ2001J/P Vishay Siliconix SPECIFICATIONS (T, = 25C UNLESS OTHERWISE NOTED) Limits VPO0300B/L/LS VQ2001J/P Parameter Symbol Test Conditions Typ? | Min | Max | Min | Max | Unit Static Drain-Source Breakdown Voltage VBR)Dss Vas =0V, Ip =-10 uA 55 -30 30 Vv Gate-Threshold Voltage Vesith) Vos = Ves, Ip =-1 mA -3.1 -2 45 -2 45 Vos =0V, Vag = 16 V +100 Gate-Body Leakage lass | Ty = 125C +500 | nA Vps =0 V, Vag = 20 V +100 Vos =-24 V, Veg =O V -10 Zero Gate Voltage Drain Current Ibss | Ty = 125C 500 500 WA Vps =-30 V, Vas = 0 V -10 On-State Drain Current? ID(on) Vps =-10 V, Veg =12 V -2.8 1.5 1.5 A Veg =-12V,Ip=-lA 15 2.5 2 Drain-Source On-Resistance 'DS(on) Q Ty = 125C 2.6 3.6 3.6 Forward Transconductance Gis Vps =l0 V, Ip=-0.5A 370 200 200 ms zommon Source Output Conduc- dos Vps=-7.5 V,Ip=0.05 A 0.25 Dynamic Input Capacitance Ciss 60 150 150 Output Capacitance Coss Vos = aes =0V 40 100 100 pF Reverse Transfer Capacitance Crss 10 60 60 Switching Turn-On Time ton Vpp =-25 V, RL = 232 19 30 Ip =-1A, VGEN =-10V Turn-Off Time toFF Rg = 252 17 30 ns Turn-On Time ton Vpp =-15 V, RL = 23 Q 19 30 Ip =-0O6A, VGEN =-10V Turn-Off Time torr Reg = 25Q 16 30 Notes a. For DESIGN AID ONLY, not subject to production testing. VPEA03 b. Pulse test: PW =300 us duty cycle = 2%. c. Switching time is essentially independent of operating temperature. www-siliconix.com * FaxBack 408-970-5600 2 Document Number: 70217 S-58620Rev. C, 21-Jun-99VP0300B/L/LS, VQ2001J/P Vy VISHAY Vishay Siliconix | TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Vag =10V _ <x <= ec ec 2 2 5 5 3 3 c c g g a a | | a a 0 1 2 -3 -4 5 Vps Drain-to-Source Voltage (V) Capacitance 175 Ves=0V 150 f=1MHz ~ = oO c 128 g 8 s E 100 8 at a & 75 2 e i Oo 50 no Oo 25 Ciss > 0 0 5 -10 -15 -20 25 -30 Vps Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 1.65 1.50 f e) => ~ <= 8 _ 1.35 e oo e a & 8 ao oO g e 1.20 Vv g co 5 OZ 5 1.05 % S 8 c 0.90 0.75 25 50 75 100 125 150 TyJunction Temperature (_C) Transfer Characteristics 1000 | / 125C -800 Ty =-55C / 35C 600 400 200 0 0 -2 -4 -6 -8 -10 Vas Gate-to-Source Voltage (V) Gate Charge -18 45 Ye Vps =-15V 2 -12 Ip=-1A | 7 Vps=-24.V -9 Y Ip=-1A -6 2 [Tt -3 0 0 1000 2000 3000 4000 5000 Qg Total Gate Charge (nC) Source-Drain Diode Forward Voltage -10K Ty = 150C 100 1 0 O05 1.0 15 20 25 -30 -35 -40 Vsp Source-to-Drain Voltage (V) Document Number: 70217 S-58620Rev. C, 21-Jun-99 www.siliconix.com * FaxBack 408-970-5600 3VP0300B/L/LS, VQ2001J/P Vishay Siliconix | TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage Threshold Region 3.0 | -10K Ip=-0.5A Vos = 10 V ~ 25 _ Ty = 150C a 1K 2 < 8 = \ 5 3 a -100 6 15 Ip=-O0.2A = G - a 2 a -10 Q = P10 0 1 0 4 -8 12 16 -20 10 -15 20 25 30 35 +40 Vas Gate-to-Source Voltage (V) Vas Gate-Source Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature (VP0300B Only) Safe Operating Area (VP0300B Only) -2.0 -1.6 = < Limited 3 1.2 =, 5 by rpgjon) 5 PN 5 Oo Oo Cc Cc s ww s Oo 08 Qo | | a a N Tg = 25C 0.4 \ Single Pulse 0 0 25 50 75 100 125 150 1 -10 50 To Case Temperature (C) Vps Drain-to-Source Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VPO300L Only) Duty Cycle = 0.5 ec 2 2) KE ge ge 0.1 w Ww oe o@ Ne ae E 0.01 9 Zz Single Pulse 0.01 0.1 4 10 100 t, Square Wave Pulse Duration (sec) Notes: 4 Pom 1 ty + | at 1. Duty Cycle, D = t 2 2. Per Unit Base = Rinya = 156C/W 3. TumTa = PomZthua 1K www-siliconix.com * FaxBack 408-970-5600 4 Document Number: 70217 S-58620Rev. C, 21-Jun-99