© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11 1Publication Order Number:
MMBTA92LT1/D
MMBTA92L, SMMBTA92L,
MMBTA93L
High Voltage Transistors
PNP Silicon
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 92 93 Unit
Collector−Emitter Voltage VCEO −300 −200 Vdc
Collector−Base Voltage VCBO −300 −200 Vdc
Emitter−Base Voltage VEBO −5.0 −5.0 Vdc
Collector Current — Continuous IC−500 mAdc
DEVICE MARKING
MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation (Note 2)
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
MMBTA92LT1G SOT−23
(Pb−Free)
SOT−23 (TO−236AF)
CASE 318
STYLE 6
3000 / Tape & Reel
MARKING
DIAGRAM
2x MG
G
2x = Specific Device Code
M = Date Code*
G= Pb−Free Package
12
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBTA92LT3G SOT−23
(Pb−Free) 10000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBTA93LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMBTA92LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
SMMBTA92LT3G SOT−23
(Pb−Free) 10000 / Tape & Ree
l
www.onsemi.com
MMBTA92L, SMMBTA92L, MMBTA93L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) MMBTA92, SMMBTA92
MMBTA93
V(BR)CEO −300
−200 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0) MMBTA92, SMMBTA92
MMBTA93
V(BR)CBO −300
−200 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0) MMBTA92, SMMBTA92
(VCB = −160 Vdc, IE = 0) MMBTA93
ICBO −
−−0.25
−0.25
mAdc
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0) IEBO −−0.1 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc) Both Types
(IC = −10 mAdc, VCE = −10 Vdc) Both Types
(IC = −30 mAdc, VCE = −10 Vdc) MMBTA92, SMMBTA92
MMBTA93
hFE 25
40
25
25
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc) MMBTA92, SMMBTA92
MMBTA93
VCE(sat) −
−−0.5
−0.5
Vdc
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) −−0.9 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT50 − MHz
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz) MMBTA92, SMMBTA92
MMBTA93
Ccb −
−6.0
8.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
300
0.1 1.0 10
250
200
150
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
-55°C
VCE = 10 Vdc
100
50
100
MMBTA92L, SMMBTA92L, MMBTA93L
www.onsemi.com
3
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
f, CURRENT-GAIN — BANDWIDTH (MHz)
T
1
Figure 3. Current−Gain − Bandwidth
130
21
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Cib @ 1MHz
100
1.0
Ccb @ 1MHz
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579 1917151311
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
Figure 4. “ON” Voltages
Figure 5. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000101
1
10
100
IC, COLLECTOR CURRENT (mA)
10 ms
1.0 s
1000
100
Single Pulse Test TA = 25°C
100 ms
1.0 ms
100 ms10 ms
MMBTA92L, SMMBTA92L, MMBTA93L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MMBTA29LT1/D
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