Avantek Products HEWLETT* PACKARD G3 Analog Level Detectors 10 to 1000 MHz Technical Data Features -120 mV Output for ~10 dBm Pin +1.0 dB Flatness 50- or 300-Ohm Impedance Applications * Specifically Designed for System Built-in Test RF/IF Monitor Level Control UTD-1001 Can Be Used Without a Coupler in Many Cases Schematic Description The UTD-1000 has an input. impedance of 50 ohms. The UTD-1001 has an input. impedance of greater than 300 ohms, In all other respects the detectors are similar. The level detector con- sists of an amplifier stage that drives a Schottky-barrier detector diode. Matched back-to-back silicon diodes which are closely thermally-coupled to the detector provide a DC tracking reference. Maximum Ratings UTD-1000/1001 Pin Configuration TO-8F GROU IND a ia co . . FF / \ VIDEO OO REFERENCE (See Section 5 for detailed case drawings. ) Reference * Requires external bias resistors see Application Note, Section 7. 5963-32505 Parameter Maximum Bias Current (diode) 1mA Continuous RF Input Power +17.0 dBm Operating Case Temperature 54C to + 125C Storage Temperature 62C to +150C. R Series Burn-In Temperature +125C Pulse Input. Power (1.0 minute max.) 100 mW Junction Temperature Above Case Temperature | 3C Weight: (typical) 2.1 grams 4-52Electrical Specifications (Measured in 50 Q system @ +15 VDC nominal) Symbol Characteristic r an 5. | clr oe +0 Bi ices Tes 88 to o85 G Unit _ Detected Voltage (Min. ) f = 500 MHz, cond,! ~120 -90 mV _ Flatness (referred to input) (Max.) f = 10-1000 MHz, cond.!2 0.7 +1.0 dB _ Variation Over Temperature (referred to input), f = 500 MHz, cond.4?3 |} +1.0 dB Input VSWR, 50 9 (UTD-1000 only) (Max.) f = 10-500 MHz L5 1.7:1 _ _ Input Impedance (UTD-1001 only) Equivalent resistance 300Q, _ _ Equivalent capacitance 3.3 pf _ _ _ Input 3rd Order Intercept Point f = 10-500 MHz +20 _ dBm _ Output Offset Voltage (Max.) Ip = IREF = 50 pA, no RF drive +10.0 +15.0 mV _ Differential Voltage Tracking +5.0 mV _ Output Capacitance 1000 1300 _ pf Conditions: 1. Ip = 50 pA, R = LOK 2 2. Pix = ~10 dBm (RF input) 3. Typical variation over 55 to +85C 4-53Typical Performance @ 25C Key: +25C 405C a me me 55C Detected Voltage, mV 3 3 = o _ Detected Voltage, mV ~ 2s = o 8388 2 38 3 IP,, dBm Detected Output vs. Diode Bias Current A, = 100 Ki) 10 Kia 1K 10 100 Diode Current, pA 1000 OC Output R= 100 Kir P, =-10 dBm tok 1, = 50 pA 1Ka 200 400 600 Frequency, MHz 800 1000 Second Order Two-Tone* Intercept Point 200 400 600 Frequency, MHz 800 1000 Detected Output vs. Power Input R= 100 Kit 10 Ka 1Ks2 1000 100 Detected Voltage, mV 10 20 -15 -10 5 0 Power Input, dBm +5 Tangential Signal Sensitivity oO 3 a 2 10 Kir 200 400 600 800 1000 Frequency, MHz Third Order TwoTone* Intercept Point a 8 e 200 400 600 Frequency, MHz 800 1000 * Distortion Curves relative to the UTD-1001 operated in shunt with a 5082 RF line. (See Application Note in Section 7.) 4-54