Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance 2 diodes in 1 package Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Symbol Conditions VRRM Tvj 25 C min IF max Unit 4500 V 1200 A Peak forward current IFRM tp = 1 ms, per Diode 2400 A Total power dissipation Ptot TC = 25 C, Tvj = 125 C, per Diode 5300 W Surge current IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave, per Diode 9000 A Isolation voltage Visol 1 min, f = 50 Hz 10200 V Junction temperature 150 C Tvj(op) -50 125 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C Junction operating temperature Mounting torques 1) 2) 2) Tvj Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA 2039 Nm Diode characteristic values 3) Parameter Symbol Forward voltage 4) VF Continuous reverse current IR Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 4) VR = 4500 V VCC = 2800 V, IF = 1200 A, di/dt = 4.8 kA/s L = 150 nH, inductive load switch: 5SNA 1200G450350 Per Diode Erec typ max Unit Tvj = 25 C min 3.2 3.7 V Tvj = 125 C 3.5 4.0 V 0.5 mA 46 mA Tvj = 25 C Tvj = 125 C 23 Tvj = 25 C 1460 Tvj = 125 C 1600 A Tvj = 25 C 1030 C Tvj = 125 C 1660 C Tvj = 25 C 1270 ns Tvj = 125 C 1860 ns Tvj = 25 C 1630 mJ Tvj = 125 C 2730 mJ 5) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink Conditions Rth(j-c)DIODE Per Diode Rth(c-s)DIODE Per Diode, grease = 1W/m x K min typ max Unit 0.019 K/W 2) Partial discharge extinction voltage Ve Comparative tracking index CTI Module stray inductance L AC Resistance, terminal-chip RAA'+CC' 0.018 f = 50 Hz, QPD 10 pC (acc. To IEC 61287) K/W 5100 V 600 Per Diode Per Diode 36 TC = 25 C 0.2 TC = 125 C 0.3 nH m For detailed mounting instructions refer to ABB Document No. 5SYA 2039 Mechanical properties 5) Parameter Symbol Dimensions LxWxH Conditions min Typical Clearance distance in air da according to IEC 60664-1 and EN 50124-1 Term. to term: 26 Surface creepage distance ds according to IEC 60664-1 and EN 50124-1 Term. to base: 64 Term. to term: 56 Mass m Package and mechanical properties according to IEC 60747 - 15 2 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012 typ 130 x 140 x 48 Term. to base: 5) A Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 2) IF = 1200 A Irr Recovered charge 3) Conditions 40 max Unit mm mm mm 1150 g Electrical configuration Outline drawing C (7) C (5) A (6) A (4) 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 3 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012 4000 3500 Erec 3000 1000 VGE = 15 V RG = 1.5 ohm CGE = 220 nF Aux. switch: 5SNA 1200G450350 500 Qrr 1500 1000 500 0 0 0 400 800 1200 1600 2000 0 2400 1 VGE = 15 V, CGE = 220 nF Aux. switch: 5SNA 1200G450350 2 3 4 5 6 7 di/dt [kA/s] IF [A] Fig. 1 RG = 1.0 ohm Irr 1500 Irr 2000 RG = 1.5 ohm 2000 2500 RG = 2.2 ohm Qrr 2500 Erec RG = 3.3 ohm Erec [mJ], Qrr [C], Irr [A] Erec [mJ], Irr [A], Qrr [C] 3000 RG = 6.8 ohm 3500 VCC = 2800 V IF = 1200 A Tvj = 125 C L = 150 nH RG = 4.7 ohm VCC = 2800 V Tvj = 125 C L = 150 nH Typical reverse recovery characteristics vs. forward current Fig. 2 Typical reverse recovery characteristics vs. di/dt 2400 2400 2000 VCC 3400 V di/dt 6500 A/s Tvj = 125 C L 150 nH 2000 25 C 1600 125 C IR [A] IF [A] 1600 1200 800 800 400 400 0 0 0 1 2 3 4 0 5 Typical diode forward characteristics chip level 4 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012 1000 2000 3000 VR [V] VF [V] Fig. 3 1200 Fig. 4 Safe operating area diode (SOA) 4000 5000 0.1 Analytical function for transient thermal impedance: n Z th (j-c) (t) = R i (1 - e-t/ i ) Zth(j-c) Diode 0.01 0.1 t [s] 1 i 1 2 3 Ri(K/kW) 12.5 4.37 2.16 i(ms) 192 22.6 3.1 4 5 5SLD 1200J450350 | Doc. No. 5SYA 1424-01 08-2012 0.001 0.0001 0.001 Fig. 5 i 1 DIODE Zth(j-c) [K/W] DIODE 0.01 10 Thermal impedance vs. time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2058 Surge currents for IGBT diodes 5SYA 2093 Thermal design of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.