High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector-Emitter Voltage VCEO 250 300 350 Vdc Collector-Base Voltage VCBO 250 300 350 Vdc Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO Rating Vdc 6.0 5.0 Voltage and current are negative for PNP transistors Base Current IB 250 mAdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJA 200 C/W RJC 83.3 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) C/W COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 300 350 -- -- -- 250 300 350 -- -- -- 6.0 5.0 -- -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 Vdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 2 1 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max -- -- -- 50 50 50 -- -- 50 50 2N6515 2N6519 2N6517, 2N6520 35 30 20 -- -- -- (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 -- -- -- (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 300 270 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 45 40 20 220 200 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 25 20 15 -- -- -- -- -- -- -- 0.30 0.35 0.50 1.0 -- -- -- 0.75 0.85 0.90 Characteristic Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6519 2N6517, 2N6520 ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6519, 2N6520 nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) -- 2.0 Vdc fT 40 200 MHz Ccb -- 6.0 pF -- -- 80 100 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6519, 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton -- 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff -- 3.5 s 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515 VCE = 10 V 2N6519 200 TJ = 125C 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 -55C 50 30 20 1.0 VCE = -10 V TJ = 125C 25C 100 70 -55C 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 1. DC Current Gain 2N6517 VCE = 10 V 100 2N6520 200 TJ = 125C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 25C 70 -55C 50 30 20 10 -1.0 50 70 100 TJ = 125C 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 BANDWIDTH PRODUCT (MHz) 2N6515, 2N6517 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 2N6519, 2N6520 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 3. Current-Gain -- Bandwidth Product http://onsemi.com 3 -50 -70 -100 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.4 2N6519, 2N6520 -1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 2.0 TJ = 25C 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 0 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 4. "On" Voltages IC 10 IB 2.0 1.5 1.0 0.5 0 25C to 125C RVC for VCE(sat) -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 2N6519, 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) 2N6515, 2N6517 2.5 -55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.5 IC 10 IB 2.0 1.5 25C to 125C 1.0 0.5 0 RVB for VBE -55C to 25C -0.5 -1.0 -1.5 -2.0 RVC for VCE(sat) -2.5 -1.0 -55C to 125C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25C Ceb 30 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 Ceb TJ = 25C 30 20 10 7.0 5.0 Ccb 3.0 2.0 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 -0.2 50 100 200 Figure 6. Capacitance http://onsemi.com 4 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) -100 -200 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.0k 700 500 200 tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 10 -1.0 70 100 tr 200 20 10 1.0 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 2N6519, 2N6520 1.0k 700 500 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 7. Turn-On Time 2N6515, 2N6517 10k 7.0k 5.0k 2N6519, 2N6520 2.0k t, TIME (ns) 3.0k 500 2.0k 1.0k 700 500 tf tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 100 70 50 300 200 100 1.0 ts 1.0k 700 ts VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 8. Turn-Off Time http://onsemi.com 5 -50 -70 -100 NPN 2N6515 2N6517 PNP 2N6519 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) ( ), RESISTANCE (NORMALIZED) Figure 9. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 SINGLE PULSE 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 10. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 PP 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 tP 1.0 ms TC = 25C 50 FIGURE A 10 s 100 s 0.5 1.0 PP t1 2N6515 2N6519 2N6517, 2N6520 1/f 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 500 Design Note: Use of Transient Thermal Resistance Data PACKAGE DIMENSIONS http://onsemi.com 6 NPN 2N6515 2N6517 PNP 2N6519 2N6520 CASE 029-04 (TO-226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- NPN 2N6515 2N6517 PNP 2N6519 2N6520 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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