To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 Features * Low on-resistance * Low leakage current * High Speed Switching Outline TO-3P D G 1 S Rev.2.00, Aug.01.2003, page 1 of 9 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3003P Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS 30 V Drain current ID 40 A 160 A Note1 Drain peak current ID (pulse) Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse) Note1 160 A Avalanche current IAPNote3 30 A 150 W Note2 Channel dissipation Pch Channel to case Thermal Impedance ch-c 0.833 C /W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Rev.2.00, Aug.01.2003, page 2 of 9 H5N3003P Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 300 -- -- V ID = 10mA, VGS = 0 Zero gate voltage drain current IDSS -- -- 1 A VDS = 300V, VGS = 0 Gate to source leak current IGSS -- -- 0.1 A VGS = 30V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 -- 4.0 V VDS = 10V, ID = 1mA Forward transfer admittance |yfs| 20 35 -- S ID = 20A, VDS = 10VNote4 Static drain to source on state resistance RDS(on) -- 0.058 0. 069 ID = 20A, VGS= 10VNote4 Input capacitance Ciss -- 5150 -- pF VDS = 25V Output capacitance Coss -- 560 -- pF VGS = 0 Reverse transfer capacitance Crss -- 90 -- pF f = 1MHz Turn-on delay time td(on) -- 60 -- ns ID= 20A Rise time tr -- 185 -- ns RL = 7.5 Turn-off delay time td(off) -- 220 -- ns VGS = 10V Fall time tf -- 150 -- ns Rg=10 Total gate charge Qg -- 130 -- nC VDD = 240V Gate to source charge Qgs -- 25 -- nC VGS = 10V Gate to drain charge Qgd -- 60 -- nC ID = 40A Body-drain diode forward voltage VDF -- 1.0 1.5 V IF = 40A, VGS = 0 Body-drain diode reverse recovery trr time -- 280 -- ns IF = 40A, VGS = 0 diF/dt=100A/s Body-drain diode reverse recovery Qrr charge -- 2.5 -- C Notes: 4. Pulse test Rev.2.00, Aug.01.2003, page 3 of 9 H5N3003P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 100 50 PW 30 DC 10 er 3 50 100 150 200 1 6V 60 5.5 V 20 0 VGS = 5 V 4 8 12 Drain to Source Voltage Rev.2.00, Aug.01.2003, page 4 of 9 16 20 VDS (V) ID (A) Pulse Test 80 40 ion s( 1s c= ho t) (T 25 C ) 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 7V m at Ta = 25C Tc (C) Drain Current ID (A) Drain Current 10 V 8V s limited by RDS(on) Typical Output Characteristics 100 10 Operation in 0.1 Case Temperature = 1 this area is 0.3 0 Op 1m 10 0 s s 10 100 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 VDS = 10 V Pulse Test 80 60 40 25C Tc = 75C 20 0 -25C 2 4 6 Gate to Source Voltage 8 10 VGS (V) H5N3003P Pulse Test 4 3 I D = 40 A 2 20 A 1 10 A Static Drain to Source on State Resistance RDS(on) () 0.02 0.01 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 V GS = 10 V I D = 40 A 0.12 20 A 0.08 10 A 0.04 0 -40 0 40 80 120 Case Temperature Tc (C) Rev.2.00, Aug.01.2003, page 5 of 9 160 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 5 Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 50 Tc = -25C 20 10 25C 5 75C 2 1 V DS = 10 V Pulse Test 0.5 0.2 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 H5N3003P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 VGS = 0 f = 1 MHz 10000 di / dt = 100 A / s V GS = 0, Ta = 25C Ciss 5000 2000 1000 Coss 500 200 100 Crss 50 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 40 60 Drain to Source Voltage 400 300 V DS = 50 V 100 V 240 V VGS VDD 200 100 0 16 12 8 V DS = 240 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) Rev.2.00, Aug.01.2003, page 6 of 9 4 0 200 Switching Characteristics 10000 Switching Time t (ns) I D = 40 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 500 80 100 VDS (V) V GS = 10 V, V DD = 150 V PW = 10 s, duty < 1 % R G =10 tf 1000 tr t d(off) tf 100 t d(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N3003P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 80 V GS = 0 V 60 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 V DS = 10 V 4 I D = 10mA 3 1mA 0.1mA 2 1 0 -50 VSD (V) 0 50 100 150 Case Temperature Tc (C) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 200 90% D.U.T. RL Vin 10 Vin 10 V V DD = 150 V Vout 10% 10% 90% td(on) Rev.2.00, Aug.01.2003, page 7 of 9 tr 10% 90% td(off) tf H5N3003P Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 lse t ho T 1s Rev.2.00, Aug.01.2003, page 8 of 9 PW T PW pu 100 D= 1m 10 m 100 m Pulse Width PW (s) 1 10 H5N3003P Package Dimensions Unit: mm 4.8 0.2 1.5 0.3 19.9 0.2 2.0 14.9 0.2 0.5 1.0 3.2 0.2 5.0 0.3 As of January, 2003 15.6 0.3 1.6 2.0 1.4 Max 18.0 0.5 2.8 1.0 0.2 3.6 0.6 0.2 0.9 1.0 5.45 0.5 5.45 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Aug.01.2003, page 9 of 9 TO-3P -- Conforms 5.0 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com (c) 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 0.0