MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features * * * * * * Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over-Voltage Protection Optimized for Low Leakage Current NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: * * * * * * * * * * Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead Available in 12 mm Tape, 5000 Units per 13 inch Reel Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) Marking: B1E2 www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1 AMPERE 20 VOLTS MARKING DIAGRAM SMA CASE 403D B1E2 AYWWG B1E2 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping MBRA120ET3G SMA 5000 / Tape & (Pb-Free) Reel NRVBA120ET3G* SMA 5000 / Tape & (Pb-Free) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2014 April, 2017 - Rev. 5 1 Publication Order Number: MBRA120ET3/D MBRA120E, NRVBA120E MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TC = 125C) IO 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +150 C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR, TJ = 25C) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead Thermal Resistance - Junction-to-Ambient Symbol 5 mm x 5 mm (Note 2) 1 Inch x 1/2 inch (Note 3) RJL RJA 34 138 20 77 C/W VF TJ = 25C TJ = 100C V 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25C TJ = 100C 10 1.0 0.5 1600 500 300 Unit ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current, See Figure 4 IR (VR = 20 V) (VR = 10 V) (VR = 5.0 V) mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads). 3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads). www.onsemi.com 2 10 150C IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRA120E, NRVBA120E 125C 100C 25C -40C 1 0.1 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 150C 100C 25C 1 0.1 0 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E-02 1E-02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150C 1E-03 125C 1E-04 100C 75C 1E-05 1E-06 25C 1E-07 1E-08 0.2 0 2 4 6 8 10 12 14 16 18 20 150C 1E-03 100C 1E-04 1E-05 1E-06 25C 1E-07 1E-08 0 VR, REVERSE VOLTAGE (VOLTS) 2 4 6 8 10 12 14 16 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current Figure 3. Typical Reverse Current www.onsemi.com 3 18 20 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) MBRA120E, NRVBA120E 1.8 dc 1.6 1.4 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 80 60 100 120 140 160 TL, LEAD TEMPERATURE (C) 0.7 0.6 dc 0.5 SQUARE WAVE 0.4 0.3 0.2 0.1 0 0 0.2 0.1 0.6 0.8 1 1.2 1.4 1.6 Figure 6. Forward Power Dissipation D = 0.5 0.3 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T, TIME (sec) Figure 7. Thermal Resistance 1000 C, CAPACITANCE (pF) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Current Derating 1 0.4 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = 25C 100 10 0 2 4 6 8 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Junction Capacitance www.onsemi.com 4 20 100 1000 MBRA120E, NRVBA120E PACKAGE DIMENSIONS SMA CASE 403D ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 A L A1 c SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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