MBRA120ET3G¦ - ON SEMICONDUCTOR

April, 2017 − Rev. 5

1Publication Order Number:

MBRA120ET3/D

MBRA120E, NRVBA120E

Surface Mount

Schottky Power Rectifier

SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

Features

•Compact Package with J−Bend Leads Ideal for Automated Handling

•Highly Stable Oxide Passivated Junction

•Guardring for Over−Voltage Protection

•Optimized for Low Leakage Current

•NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

•Case: Molded Epoxy

•Epoxy Meets UL94, VO at 1/8″

•Weight: 70 mg (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Polarity Band Indicates Cathode Lead

•Available in 12 mm Tape, 5000 Units per 13 inch Reel

•Device Meets MSL1 Requirements

•ESD Ratings: Machine Model, C (>400 V)

Human Body Model, 3B (>8000 V)

•Marking: B1E2

Device Package Shipping†

ORDERING INFORMATION

MBRA120ET3G SMA

(Pb−Free)

5000 / Tape &

Reel

SCHOTTKY BARRIER

RECTIFIER

1 AMPERE

20 VOLTS

SMA

CASE 403D

MARKING

DIAGRAM

www.onsemi.com

B1E2

AYWWG

B1E2 = Specific Device Code

A = Assembly Location**

Y = Year

WW = Work Week

G= Pb−Free Package

NRVBA120ET3G* SMA

(Pb−Free)

5000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

**The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter pin),

the front side assembly code may be blank.

(Note: Microdot may be in either location)

MBRA120E, NRVBA120E

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

20 V

Average Rectified Forward Current

(At Rated VR, TC = 125°C)

IO1.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 40 A

Storage Temperature Tstg −55 to +150 °C

Operating Junction Temperature TJ−55 to +150 °C

Voltage Rate of Change

(Rated VR, TJ = 25°C)

dv/dt 10,000 V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol

5 mm x 5 mm

(Note 2)

1 Inch x 1/2 inch

(Note 3) Unit

Thermal Resistance − Junction−to−Lead

Thermal Resistance − Junction−to−Ambient

RθJL

RθJA

138

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1), See Figure 2 VFTJ = 25°C TJ = 100°CV

(IF = 0.1 A)

(IF = 1.0 A)

(IF = 2.0 A)

0.455

0.530

0.595

0.360

0.455

0.540

Maximum Instantaneous Reverse Current, See Figure 4 IRTJ = 25°C TJ = 100°CmA

(VR = 20 V)

(VR = 10 V)

(VR = 5.0 V)

1.0

0.5

1600

500

300

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤2%.

2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads).

3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads).

MBRA120E, NRVBA120E

www.onsemi.com

150°C

0.1 0.30.20.1

, INSTANTANEOUS VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

864201210 20

IR, REVERSE CURRENT (A)

0.1 0.40.30.20.1 0.6

, INSTANTANEOUS VOLTAGE (VOLTS)

0 0.5

14 16 18

0.60.50.4 0.7 10.90.8

, INSTANTANEOUS FORWARD CURRENT (A)

0.90.80.7 1

, INSTANTANEOUS FORWARD CURRENT (A)

1E−08

1E−07

1E−06

1E−05

1E−04

1E−03

1E−02

VR, REVERSE VOLTAGE (VOLTS)

864201210 20

IR, REVERSE CURRENT (A)

14 16 18

1E−08

1E−07

1E−06

1E−05

1E−04

1E−03

1E−02

125°C

100°C

25°C

−40°C

150°C

100°C

25°C

150°C

125°C

100°C

75°C

25°C

150°C

100°C

25°C

MBRA120E, NRVBA120E

www.onsemi.com

0.8

12010060

020 160

TL, LEAD TEMPERATURE (°C)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

Figure 7. Thermal Resistance

0.4

1.8

0.4

IO, AVERAGE FORWARD CURRENT (AMPS)

0.2

0.7

Figure 8. Typical Junction Capacitance

8040 140

0.6

0.2

1.20.60.2 1.6010.80.4 1.4

0.5

0.1

0.3

T, TIME (sec)

2120

VR, REVERSE VOLTAGE (VOLTS)

1000

100

R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

64 10 14 16

TJ = 25°C

18 20

C, CAPACITANCE (pF)

0.6

PFO, AVERAGE POWER DISSIPATION (WATTS)

SQUARE WAVE

, AVERAGE FORWARD CURRENT (AMPS)

1.4

1.6

1.2 SQUARE WAVE

0.00010.00001

0.1

0.01

0.001

0.10.01 10 100 100010.001

D = 0.5

0.3

0.2

0.02

0.05

0.1

SINGLE PULSE

MBRA120E, NRVBA120E

www.onsemi.com

PACKAGE DIMENSIONS

SMA

CASE 403D

ISSUE H

DIM

MIN NOM MAX MIN

MILLIMETERS

1.97 2.10 2.20 0.078

INCHES

A1 0.05 0.10 0.20 0.002

b1.27 1.45 1.63 0.050

c0.15 0.28 0.41 0.006

D2.29 2.60 2.92 0.090

E4.06 4.32 4.57 0.160

L0.76 1.14 1.52 0.030

0.083 0.087

0.004 0.008

0.057 0.064

0.011 0.016

0.103 0.115

0.170 0.180

0.045 0.060

NOM MAX

4.83 5.21 5.59 0.190 0.205 0.220

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES)

4.000

0.157

2.000

0.079

2.000

0.079

ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

MBRA120ET3/D

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