AP2301N Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline D Surface Mount Device BVDSS -20V RDS(ON) 130m ID - 2.6A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. G S The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units - 20 V 12 V 3 -2.6 A 3 -2.1 A Continuous Drain Current Continuous Drain Current 1,2 IDM Pulsed Drain Current -10 A PD@TA=25 Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 /W 200407043 AP2301N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -20 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA - -0.1 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=-5V, ID=-2.8A - - 130 m VGS=-2.8V, ID=-2.0A - - 190 m VDS=VGS, ID=-250uA -0.5 - - V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VGS=0V, ID=-250uA VDS=-5V, ID=-2.8A - 4.4 - S o VDS=-20V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -10 uA Gate-Source Leakage VGS=12V - - 100 nA ID=-2.8A - 5.2 10 nC Drain-Source Leakage Current (Tj=25 C) IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-6V - 1.36 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC VDS=-15V - 5.2 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 9.7 - ns td(off) Turn-off Delay Time RG=6,VGS=-10V - 19 - ns tf Fall Time RD=15 - 29 - ns Ciss Input Capacitance VGS=0V - 295 - pF Coss Output Capacitance VDS=-6V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Min. Typ. - - -1 A - - -10 A - - -1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25, IS=-1.6A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. Max. Units AP2301N 10 10 VGS= -5V o T A =25 C -ID , Drain Current (A) -ID , Drain Current (A) VGS= -4V 8 8 VGS= -3V 6 4 VGS= -2V 2 VGS= -3V 6 4 VGS= -2V 2 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 800 1.8 I D = -2.8A V GS = -5V 1.6 I D = -2A T A =25 Normalized R DS(ON) 600 RDS(ON) ( ) VGS= -5V o T A =150 C VGS= -4V 400 200 1.4 1.2 1 0.8 0 0 2 4 6 8 0.6 10 -50 0 -V GS , Gate-to-Source Voltage (V) 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 10 -VGS(th) (V) 1.5 -IS(A) 1 T j =150 o C T j =25 o C 1.0 0.5 0 0.0 0 0.1 0.3 0.5 0.7 0.9 1.1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2301N f=1.0MHz -VGS , Gate to Source Voltage (V) 5 1000 I D =-2.8A V DS =-6V 4 C iss C oss C (pF) 3 100 C rss 2 1 10 0 0 2 4 6 1 3 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 7 9 11 13 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 -ID (A) 5 -V DS , Drain-to-Source Voltage (V) 1ms 1 10ms 100ms 0.1 T A =25 C Single Pulse 1s DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Single Pulse Rthja = 270 /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q