Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Simple Drive Requirement BVDSS -20V
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▼ Small Package Outline RDS(ON) 130mΩ
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▼ Surface Mount Device ID- 2.6A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 90 ℃/W
Data and specifications subject to change without notice 200407043
AP2301N
Rating
- 20
± 12
-2.6
0.01
1.38
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3-2.1
Pulsed Drain Current1,2 -10
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range -55 to 150
Linear Derating Factor
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-5V, ID=-2.8A - - 130 mΩ
VGS=-2.8V, ID=-2.0A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=±12V - - nA
QgTotal Gate Charge2ID=-2.8A - 5.2 10 nC
Qgs Gate-Source Charge VDS=-6V - 1.36 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC
td(on) Turn-on Delay Time2VDS=-15V - 5.2 - ns
trRise Time ID=-1A - 9.7 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 19 - ns
tfFall Time RD=15Ω-29-ns
Ciss Input Capacitance VGS=0V - 295 - pF
Coss Output Capacitance VDS=-6V - 170 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
ISM Pulsed Source Current ( Body Diode )1- - -10 A
VSD Forward On Voltage2Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
±100
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP2301N
0
2
4
6
8
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oCVGS= -5V
VGS= -4V
VGS= -3V
VGS= -2V
0
2
4
6
8
10
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150oCVGS= -5V
VGS= -4V
VGS= -3V
VGS= -2V
0
200
400
600
800
0246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
Ω
Ω
Ω
)
ID= -2A
TA=25
℃
℃℃
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature (oC)
Normalized RDS(ON)
ID= -2.8A
VGS = -5V
0
0
1
10
0.1 0.3 0.5 0.7 0.9 1.1 1.3
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
0.0
0.5
1.0
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
-VGS(th) (V)
AP2301N
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃℃
℃/W
tT
Single Pulse
0
1
2
3
4
5
0246
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-2.8A
VDS =-6V
10
100
1000
135791113
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
QGS QGD
QG
Charge
-5V
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
1ms
10ms
100ms
1s
DC
TA=25 °C
Single Pulse
