GS66516T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features - 650V enhancement mode power switch - Top cooled configuration - Ultra low FOM Island TechnologyTM die - Low inductance GaNPXTM package - Reverse current capability - Integral source sense - Dual gate pads for optimal board layout - Zero reverse recovery loss - RoHS 6 compliant Applications - On-board battery chargers - 400V DC-DC conversion - Inverters, UPS, and VFD motor drive - AC-DC power supplies (PFC & primary) - VHF small form factor power adapters - High frequency, high efficiency power conversion top view D TP G G S TP = thermal pad - internally connected to the source (S) and to the substrate. Absolute Maximum Ratings (Tcase = 25C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Tcase=25C) (Note 1) Continuous Drain Current (Tcase=100C) Pulsed Drain Current (Tcase=25C) (Note 2) Symbol TJ TS VDS VGS IDS(cont)25 IDS(cont)100 IDpulse Value -55 to +150 -55 to +150 650 10 60 47 120 Units C C V V A A A Symbol Value Units Thermal Resistance (junction to case) RJC 0.25 C /W Maximum Soldering Temperature (MSL3 rated) TSOLD 260 C (1) Saturation imposes current limit (2) Pulse width is limited by TJ(max) Thermal Characteristics (Typical values unless otherwise noted) Parameters Ordering Information Part number GS66516T GS66516T Preliminary - Rev 150406 Package type GaNPX top-cooled GaNPX top-cooled Ordering code GS66516T-TR GS66516T-MR Packing method Tape-and-reel Mini-reel (c) 2009-2015 GaN Systems Inc. This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. 1 GS66516T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Electrical Characteristics (Typical values at TCASE= 25C unless otherwise noted) Parameters Drain-to-Source Breakdown Voltage (Min.) Drain-to-Source On Resistance (TJ =25C) Drain-to-Source On Resistance (TJ=150C) Gate Threshold Voltage Symbol Value Units Conditions BVDSS 650 V VGS =0V 27 m VGS =7V, TJ=25C 70 m VGS =7V, TJ=150C 1.6 V VDS =VGS 4.0 A 800 A RDS(ON) VGS(th) Drain to Source Leakage Current (TJ=25C) IDSS Drain to Source Leakage Current (TJ=150C) VDS=650V VGS =0V, TJ=25C VDS=650V VGS =0 V, TJ=150C Gate to Source Current IGS 80 A VGS=7V, VDS=0V Gate Resistance RG 1.5 f=1MHz, open drain Gate Plateau Voltage Vplat 3.0 V VDS=400V Source-Drain Reverse Voltage VSD 2.8 V VGS=0V, TJ =25C Input Capacitance CISS 400 Output Capacitance COSS 134 pF Reverse Transfer Capacitance CRSS 4.0 VDS=400V VGS=0V f=1MHz Effective Output Capacitance, Energy Related Co(er) 176 pF Effective Output Capacitance, Time Related Co(tr) 286 pF QG(TOT) 13.0 nC Gate-to-Source Charge QGS 2.8 nC Gate-to-Drain Charge QGD 5.6 nC Reverse Recovery Charge QRR 0 nC Output Charge QOSS 114 nC Total Gate Charge Preliminary - Rev 150406 VGS =0V VDS=0 to 400V ID =constant VGS =0V VDS=0 to 400V VGS=0 to 7V VDS=400V (c) 2009-2015 GaN Systems Inc. This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. 2 GS66516T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Package Dimensions Recommended Minimum Footprint www.gansystems.com North America Europe Asia Important Notice - Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply. (c) 2009-2015 GaN Systems Inc. All rights reserved. Preliminary - Rev 150406 (c) 2009-2015 GaN Systems Inc. This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GaN Systems: GS66516T-E01-TY