MS1451
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DESCRIPTION: DESCRIPTION:
The MS1451 is a gold metallized silicon NPN planar transistor
designed for high linearity Class AB operation in cellular
base station applications. The MS1451 is designed as a
medium power output device or as the driver for MS1452.
Diffused emitter ballast resistors provide thermal stability
and reliability under Class AB linear operation.
ABSOABSOLUTE MAXIMUM RATINGS LUTE MAXIMUM RATINGS (Tcase = 25°°C)
VCBO Collector-Base Voltage 48 V
VCEO Collector-Emitter Voltage 30 V
VCES Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 3.5 V
29
IC Device Current 2.5 A
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C)
Thermal Resistance Junction-case
6.0 °°C/W
FeaturesFeatures
• 800-960 MHz
• 24 VOLTS
• CLASS AB LINEAR OPERATION
• POUT = 15 WATTS
• GP = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
800-960 MHz BASE STATION APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855