wa SGS-THOMSON BD241BFi oy, MICROELECTRONICS BD242BFi COMPLEMENTARY SILICON POWER TRANSISTORS e SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BF! is silicon epitaxial-base NPN transistors mounted in ISOWATT220 plastic y2 package. It is are inteded for power linear and switching applications, ISOWATT220 The complementary PNP types is the BD242BF. INTERNAL SCHEMATIC DIAGRAM C9 (2) Co (2) C06g60 . . SCOa816 . \ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD241BFi PNP BD2426Fi Vcer |Collector-Base Voltage (Raz = 100 9) 90 Vv Voro | Collector-Emitter Voltage (ia = 0) 80 V Vepo |Emitter-Base Voitage (ic = 0) V Io Collector Current 3 A Ion Collector Peak Currant A la Base Current 1 A Pio: | Total Dissipation at Tc. s 26 C 18 Ww Teg Storage Temperature -65 to 150 | Max. Operating Junction Temperature 150 C | parm types vollage and current values are negative. April 1997 12 143BD241BFI/BD242BFI THERMAL DATA [ Rinj-case Thermal Resistance Junction-case Max | 7 | C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. | Max. Unit leeo Collector Cut-off Voce = 60V 0.3 mA Curent (la=0) | L Ices Collector Cut-off Vce = 80 V 0.2 mA |Current (Vee = 0) | lepo Emitter Cut-off Current |Vep = 5 V ! 1 mA (Ic = 9) an Vceo(sus}* | Collector-Emitter lo = 30 mA 80 v Sustaining Voltage : (lg = 0) i i Voeisar |Collector-Emitter tc=3A lg =O0.6A 1.2 v _ Saturation Voltage fo Veecon;* |Base-Emitter Voliage jic = 3A Voe=4V 1.8 y hre* OC Current Gain lc= 1A Voe=4V 25 i Ic a3A Vor =4V 10 * Pulsed: Pulse duration = 300 ys, duty cycle < 2% For PNP types voltage and current values are negative. 2/2 vs A97 Sion serene: