4-4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9520 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID-6
-4 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM -24 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D40 W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 370 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V (Figure 10) -100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TC = 125oC- - -250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -6 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = -3.5A, VGS = -10V (Figures 8, 9) - 0.500 0.600 Ω
Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = -3.5A
( Figure 12) 0.9 2 - S
Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID≈ -6.0A,
RG = 50Ω , RL = 7.7Ω for VDSS = 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-2550ns
Rise Time tr- 50 100 ns
Turn-Off Delay Time td(OFF) - 50 100 ns
Fall Time tf- 50 100 ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature
-1622nC
Gate to Source Charge Qgs -9-nC
Gate to Drain “Miller” Charge Qgd -7-nC
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11) - 300 - pF
Output Capacitance COSS - 200 - pF
Reverse Transfer Capacitance CRSS -50- pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab To
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction-to-Case RθJC - - 3.12 oC/W
Thermal Resistance Junction-to-Ambient RθJA Typical Socket Mount - - 62.5 oC/W
LS
LD
G
D
S
IRF9520